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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
MCACL220N04YHE3-TP

MCACL220N04YHE3-TP

MOSFET N-CH 40 220A DFN5060-C

Micro Commercial Co

9,066 -
MCACL220N04YHE3-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 220A (Tc) 4.5V, 10V 1.3mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 131 nC @ 10 V 40 V ±20V 7216 pF @ 25 V AEC-Q101 - DFN5060-C Automotive 125W (Tj) -55°C ~ 175°C (TJ)
DMTH10H010LCTB-13

DMTH10H010LCTB-13

MOSFET N-CH 100V 108A TO220AB

Diodes Incorporated

790 -
DMTH10H010LCTB-13

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 108A (Tc) 10V 9.5mOhm @ 13A, 10V Surface Mount 3.5V @ 250µA 53.7 nC @ 10 V 100 V ±20V 2592 pF @ 50 V AEC-Q101 - TO-263 Automotive 2.4W (Ta), 166W (Tc) -55°C ~ 175°C (TJ)
IPP90R1K2C3XKSA2

IPP90R1K2C3XKSA2

MOSFET N-CH 900V 5.1A TO220-3

Infineon Technologies

9,798 -
IPP90R1K2C3XKSA2

数据表

CoolMOS™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 5.1A (Tc) 10V 1.2Ohm @ 2.8A, 10V Through Hole 3.5V @ 310µA 28 nC @ 10 V 900 V ±20V 710 pF @ 100 V - - PG-TO220-3-1 - 83W (Tc) -55°C ~ 150°C (TJ)
IPP80R600P7XKSA1

IPP80R600P7XKSA1

MOSFET N-CH 800V 8A TO220-3

Infineon Technologies

3,795 -
IPP80R600P7XKSA1

数据表

CoolMOS™ P7 TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 600mOhm @ 3.4A, 10V Through Hole 3.5V @ 170µA 20 nC @ 10 V 800 V ±20V 570 pF @ 500 V - - PG-TO220-3 - 60W (Tc) -55°C ~ 150°C (TJ)
PSMN3R4-30PL,127

PSMN3R4-30PL,127

MOSFET N-CH 30V 100A TO220AB

Nexperia USA Inc.

3,583 -
PSMN3R4-30PL,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 3.4mOhm @ 10A, 10V Through Hole 2.15V @ 1mA 64 nC @ 10 V 30 V ±20V 3907 pF @ 12 V - - TO-220AB - 114W (Tc) -55°C ~ 175°C (TJ)
ZVN4306GVTA

ZVN4306GVTA

MOSFET N-CH 60V 2.1A SOT223

Diodes Incorporated

1,153 -
ZVN4306GVTA

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.1A (Ta) 5V, 10V 330mOhm @ 3A, 10V Surface Mount 3V @ 1mA - 60 V ±20V 350 pF @ 25 V - - SOT-223-3 - 3W (Ta) -55°C ~ 150°C (TJ)
HUFA75333S3ST

HUFA75333S3ST

MOSFET N-CH 55V 66A D2PAK

onsemi

4,529 -
HUFA75333S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 66A (Tc) 10V 16mOhm @ 66A, 10V Surface Mount 4V @ 250µA 85 nC @ 20 V 55 V ±20V 1300 pF @ 25 V - - TO-263 (D2PAK) - 150W (Tc) -55°C ~ 175°C (TJ)
HUFA75433S3ST

HUFA75433S3ST

MOSFET N-CH 60V 64A D2PAK

onsemi

9,896 -
HUFA75433S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 64A (Tc) 10V 16mOhm @ 64A, 10V Surface Mount 4V @ 250µA 117 nC @ 20 V 60 V ±20V 1550 pF @ 25 V - - TO-263 (D2PAK) - 150W (Tc) -55°C ~ 175°C (TJ)
TQM043NH04LCR RLG

TQM043NH04LCR RLG

40V, 54A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

5,000 -
TQM043NH04LCR RLG

数据表

PerFET™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta), 54A (Tc) 4.5V, 10V 4.3mOhm @ 27A, 10V Surface Mount 2.2V @ 250µA 42 nC @ 10 V 40 V ±16V 2480 pF @ 25 V AEC-Q101 - 8-PDFN (5x6) Automotive 100W (Tc) -55°C ~ 175°C (TJ)
AUIRFS3306

AUIRFS3306

MOSFET N-CH 60V 120A D2PAK

Infineon Technologies

9,893 -
AUIRFS3306

数据表

HEXFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 4.2mOhm @ 75A, 10V Surface Mount 4V @ 150µA 125 nC @ 10 V 60 V ±20V 4520 pF @ 50 V - - PG-TO263-3 - 230W (Tc) -55°C ~ 175°C (TJ)
TQM043NH04CR RLG

TQM043NH04CR RLG

40V, 54A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

5,000 -
TQM043NH04CR RLG

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IPA060N06NM5SXKSA1

IPA060N06NM5SXKSA1

MOSFET N-CH 60V 56A TO220

Infineon Technologies

9,778 -
IPA060N06NM5SXKSA1

数据表

OptiMOS™ 5 TO-220-3 Full Pack Tube Last Time Buy N-Channel MOSFET (Metal Oxide) 56A (Tc) 6V, 10V 6mOhm @ 56A, 10V Through Hole 3.3V @ 36µA 36 nC @ 10 V 60 V ±20V 2600 pF @ 30 V - - PG-TO220 Full Pack - 33W (Tc) -55°C ~ 175°C (TJ)
STD10PF06T4

STD10PF06T4

MOSFET P-CH 60V 10A DPAK

STMicroelectronics

9,213 -
STD10PF06T4

数据表

STripFET™ II TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 200mOhm @ 5A, 10V Surface Mount 4V @ 250µA 21 nC @ 10 V 60 V ±20V 850 pF @ 25 V - - DPAK - 40W (Tc) 175°C (TJ)
NVD5C464NLT4G

NVD5C464NLT4G

T6 40V DPAK EXPANSION AND

onsemi

2,500 -
NVD5C464NLT4G

数据表

- - Tape & Reel (TR) Active - - 18A (Ta), 64A (Tc) - - - - - - - - AEC-Q101 - - Automotive - -
IRF7811AVTRPBF

IRF7811AVTRPBF

MOSFET N-CH 30V 10.8A 8SO

Infineon Technologies

6,731 -
IRF7811AVTRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10.8A (Ta) 4.5V 14mOhm @ 15A, 4.5V Surface Mount 3V @ 250µA 26 nC @ 5 V 30 V ±20V 1801 pF @ 10 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
SQR97N06-6M3L_GE3

SQR97N06-6M3L_GE3

MOSFET N-CH 60V 50A TO252

Vishay Siliconix

1,992 -
SQR97N06-6M3L_GE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 97A (Tc) 4.5V, 10V 6.3mOhm @ 25A, 10V Surface Mount 2.5V @ 250µA 125 nC @ 10 V 60 V ±20V 6060 pF @ 25 V AEC-Q101 - TO-252AA Automotive 136W (Tc) -55°C ~ 175°C (TJ)
IRF7233TRPBF

IRF7233TRPBF

MOSFET P-CH 12V 9.5A 8SO

Infineon Technologies

4,014 -
IRF7233TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 9.5A (Ta) 2.5V, 4.5V 20mOhm @ 9.5A, 4.5V Surface Mount 600mV @ 250µA (Min) 74 nC @ 5 V 12 V ±12V 6000 pF @ 10 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
2SK327700L

2SK327700L

MOSFET N-CH 200V 2.5A U-G1

Panasonic Electronic Components

5,880 -
2SK327700L

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 1.7Ohm @ 1.25A, 10V Surface Mount 4V @ 1mA - 200 V ±20V 170 pF @ 20 V - - U-G1 - 1W (Ta), 10W (Tc) 150°C (TJ)
SIHFR9310TR-GE3

SIHFR9310TR-GE3

MOSFET P-CH 400V 1.8A DPAK

Vishay Siliconix

1,638 -
SIHFR9310TR-GE3

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 1.8A (Tc) 10V 7Ohm @ 1.1A, 10V Surface Mount 4V @ 250µA 13 nC @ 10 V 400 V ±20V 270 pF @ 25 V - - TO-252AA - 50W (Tc) -55°C ~ 150°C (TJ)
FDD6612A

FDD6612A

MOSFET N-CH 30V 9.5A/30A DPAK

onsemi

7,357 -
FDD6612A

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9.5A (Ta), 30A (Tc) 4.5V, 10V 20mOhm @ 9.5A, 10V Surface Mount 3V @ 250µA 9.4 nC @ 5 V 30 V ±20V 660 pF @ 15 V - - TO-252AA - 2.8W (Ta), 36W (Tc) -55°C ~ 175°C (TJ)
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