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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TSM5ND50CI500V, 5A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
4,529 | - |
|
数据表 |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | - | 1.5Ohm @ 1.6A, 10V | Through Hole | 3.8V @ 250µA | 16 nC @ 10 V | 500 V | ±30V | 603 pF @ 50 V | - | - | TO-220 | - | 42W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TSG65N190CR RVG650V, 11A, PDFN56, E-MODE GAN TR Taiwan Semiconductor Corporation |
2,999 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
TSM60NE069PW C0G600V, 51A, SINGLE N-CHANNEL HIGH Taiwan Semiconductor Corporation |
295 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 51A (Tc) | 10V, 12V | 60mOhm @ 17A, 12V | Through Hole | 6V @ 3.5mA | 86 nC @ 10 V | 600 V | ±30V | 3566 pF @ 300 V | - | - | TO-247 | - | 417W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TSG65N195CE RVG650V, 11A, PDFN88, E-MODE GAN TR Taiwan Semiconductor Corporation |
3,000 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
TSM60NC390CI C0G600V, 11A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
7,897 | - |
|
数据表 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 390mOhm @ 3.8A, 10V | Through Hole | 5V @ 1mA | 21.3 nC @ 10 V | 600 V | ±20V | 832 pF @ 25 V | - | - | ITO-220 | - | 78W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TSM60NE048PW C0GMOSFET Taiwan Semiconductor Corporation |
300 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 61A (Tc) | 10V, 12V | 44mOhm @ 20A, 12V | Through Hole | 6V @ 4.6mA | 114 nC @ 10 V | 600 V | ±30V | 5023 pF @ 300 V | - | - | TO-247 | - | 431W (Tc) | -55°C ~ 150°C (TJ) |
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|
TSM033NA03CR RLGMOSFET N-CH 30V 129A 8PDFN Taiwan Semiconductor Corporation |
20 | - |
|
数据表 |
- | 8-PowerTDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 129A (Tc) | 4.5V, 10V | 3.3mOhm @ 21A, 10V | Surface Mount | 2.5V @ 250µA | 31 nC @ 10 V | 30 V | ±20V | 1850 pF @ 15 V | - | - | 8-PDFN (5x6) | - | 96W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TSG65N110CE RVG650V, 18A, PDFN88, E-MODE GAN TR Taiwan Semiconductor Corporation |
3,000 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
TSM061NA03CV RGGMOSFET N-CH 30V 66A 8PDFN Taiwan Semiconductor Corporation |
8,575 | - |
|
数据表 |
- | 8-PowerWDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 66A (Tc) | 4.5V, 10V | 6.1mOhm @ 16A, 10V | Surface Mount | 2.5V @ 250µA | 19.3 nC @ 10 V | 30 V | ±20V | 1136 pF @ 15 V | - | - | 8-PDFN (3.1x3.1) | - | 44.6W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TSG65N068CE RVG650V, 30A, PDFN88, E-MODE GAN TR Taiwan Semiconductor Corporation |
2,962 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
