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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TSM3401CX RFG

TSM3401CX RFG

MOSFET P-CHANNEL 30V 3A SOT23

Taiwan Semiconductor Corporation

15 -
TSM3401CX RFG

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3A (Ta) 4.5V, 10V 60mOhm @ 3A, 10V Surface Mount 3V @ 250µA 2.7 nC @ 10 V 30 V ±20V 551.57 pF @ 15 V - - SOT-23 - 1.25W (Ta) -55°C ~ 150°C (TJ)
TSM60NE084PW C0G

TSM60NE084PW C0G

600V, 42A, SINGLE N-CHANNEL HIGH

Taiwan Semiconductor Corporation

300 -
TSM60NE084PW C0G

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 42A (Tc) 10V, 12V 80mOhm @ 14A, 12V Through Hole 6V @ 2.9mA 68 nC @ 10 V 600 V ±30V 2939 pF @ 300 V - - TO-247 - 357W (Tc) -55°C ~ 150°C (TJ)
TSM4NB60CI

TSM4NB60CI

600V, 4A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

6,185 -
TSM4NB60CI

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 2.5Ohm @ 2A, 10V Through Hole 4.5V @ 250µA 14.5 nC @ 10 V 600 V ±30V 500 pF @ 25 V - - ITO-220 - 25W (Tc) -55°C ~ 150°C (TJ)
TSM60NE069CIT C0G

TSM60NE069CIT C0G

600V, 24A, SINGLE N-CHANNEL HIGH

Taiwan Semiconductor Corporation

2,000 -
TSM60NE069CIT C0G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 24A (Tc) 10V, 12V 60mOhm @ 8A, 12V Through Hole 6V @ 3.5mA 89 nC @ 10 V 600 V ±30V 3551 pF @ 300 V - - ITO-220TL - 89W (Tc) -55°C ~ 150°C (TJ)
TSM4NB65CI

TSM4NB65CI

650V, 4A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

3,237 -
TSM4NB65CI

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 3.37Ohm @ 2A, 10V Through Hole 4.5V @ 250µA 13.46 nC @ 10 V 650 V ±30V 549 pF @ 25 V - - ITO-220 - 25W (Tc) -55°C ~ 150°C (TJ)
TSM5NC50CF

TSM5NC50CF

500V, 5A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

3,632 -
TSM5NC50CF

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.38Ohm @ 1.7A, 10V Through Hole 4.5V @ 250µA 15 nC @ 10 V 500 V ±30V 586 pF @ 50 V - - ITO-220S - 40W (Tc) -55°C ~ 150°C (TJ)
TSM60NE084CIT C0G

TSM60NE084CIT C0G

600V, 21A, SINGLE N-CHANNEL HIGH

Taiwan Semiconductor Corporation

2,000 -
TSM60NE084CIT C0G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V, 12V 82mOhm @ 7A, 12V Through Hole 6V @ 2.9mA 69 nC @ 10 V 600 V ±30V 2930 pF @ 300 V - - ITO-220TL - 83W (Tc) -55°C ~ 150°C (TJ)
TSM150P04LCS

TSM150P04LCS

-40, -22, SINGLE P-CHANNEL

Taiwan Semiconductor Corporation

3,640 -
TSM150P04LCS

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 9A (Ta), 22A (Tc) 4.5V, 10V 15mOhm @ 9A, 10V Surface Mount 2.5V @ 250µA 48 nC @ 10 V 40 V ±20V 2783 pF @ 20 V - - 8-SOP - 2.2W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
TSM10N06CP ROG

TSM10N06CP ROG

MOSFET N-CHANNEL 60V 10A TO252

Taiwan Semiconductor Corporation

7,404 -
TSM10N06CP ROG

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Ta) 4V, 10V 65mOhm @ 10A, 10V Surface Mount 3V @ 250µA 10.5 nC @ 4.5 V 60 V ±20V 1100 pF @ 30 V - - TO-252 (DPAK) - 45W (Tc) -55°C ~ 150°C (TJ)
TSM160P04LCRHRLG

TSM160P04LCRHRLG

MOSFET P-CH 40V 51A 8PDFN

Taiwan Semiconductor Corporation

2,477 -
TSM160P04LCRHRLG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 51A (Tc) 4.5V, 10V 16mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 48 nC @ 10 V 40 V ±20V 2712 pF @ 20 V AEC-Q101 - 8-PDFN (5x6) Automotive 69W (Tc) -55°C ~ 150°C (TJ)
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