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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TSM2N60ECP ROG

TSM2N60ECP ROG

MOSFET N-CHANNEL 600V 2A TO252

Taiwan Semiconductor Corporation

7,696 -
TSM2N60ECP ROG

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 4Ohm @ 1A, 10V Surface Mount 5V @ 250µA 9.5 nC @ 10 V 600 V ±30V 362 pF @ 25 V - - TO-252 (DPAK) - 52.1W (Tc) -55°C ~ 150°C (TJ)
TSM60N600CH C5G

TSM60N600CH C5G

MOSFET N-CHANNEL 600V 8A TO251

Taiwan Semiconductor Corporation

8,534 -
TSM60N600CH C5G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 600mOhm @ 4A, 10V Through Hole 4V @ 250µA 13 nC @ 10 V 600 V ±30V 743 pF @ 100 V - - TO-251 (IPAK) - 83W (Tc) -55°C ~ 150°C (TJ)
TSM2N100CH C5G

TSM2N100CH C5G

MOSFET N-CH 1000V 1.85A TO251

Taiwan Semiconductor Corporation

3,322 -
TSM2N100CH C5G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.85A (Tc) 10V 8.5Ohm @ 900mA, 10V Through Hole 5.5V @ 250µA 17 nC @ 10 V 1000 V ±30V 625 pF @ 25 V - - TO-251 (IPAK) - 77W (Tc) -55°C ~ 150°C (TJ)
TSM80N1R2CH C5G

TSM80N1R2CH C5G

MOSFET N-CH 800V 5.5A TO251

Taiwan Semiconductor Corporation

7,440 -
TSM80N1R2CH C5G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 1.2Ohm @ 2.75A, 10V Through Hole 4V @ 250µA 19.4 nC @ 10 V 800 V ±30V 685 pF @ 100 V - - TO-251 (IPAK) - 110W (Tc) -55°C ~ 150°C (TJ)
TSM6N50CP ROG

TSM6N50CP ROG

MOSFET N-CH 500V 5.6A TO252

Taiwan Semiconductor Corporation

4,463 -
TSM6N50CP ROG

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.6A (Ta) 10V 1.4Ohm @ 2.8A, 10V Surface Mount 4V @ 250µA 25 nC @ 10 V 500 V ±30V 900 pF @ 25 V - - TO-252 (DPAK) - 90W (Tc) 150°C (TJ)
TSM7N90CZ C0G

TSM7N90CZ C0G

MOSFET N-CHANNEL 900V 7A TO220

Taiwan Semiconductor Corporation

6,596 -
TSM7N90CZ C0G

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 1.9Ohm @ 3.5A, 10V Through Hole 4V @ 250µA 49 nC @ 10 V 900 V ±30V 1969 pF @ 25 V - - TO-220 - 40.3W (Tc) -55°C ~ 150°C (TJ)
TSM80N950CH C5G

TSM80N950CH C5G

MOSFET N-CHANNEL 800V 6A TO251

Taiwan Semiconductor Corporation

6,366 -
TSM80N950CH C5G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 950mOhm @ 3A, 10V Through Hole 4V @ 250µA 19.6 nC @ 10 V 800 V ±30V 691 pF @ 100 V - - TO-251 (IPAK) - 110W (Tc) -55°C ~ 150°C (TJ)
TSM9409CS RLG

TSM9409CS RLG

MOSFET P-CHANNEL 60V 3.5A 8SOP

Taiwan Semiconductor Corporation

1 -
TSM9409CS RLG

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 3.5A (Ta) 4.5V, 10V 155mOhm @ 3.5A, 10V Surface Mount 1V @ 250µA 6 nC @ 10 V 60 V ±20V 540 pF @ 30 V - - 8-SOP - 3W (Ta) -55°C ~ 150°C (TJ)
TSM1NB60CP ROG

TSM1NB60CP ROG

MOSFET N-CHANNEL 600V 1A TO252

Taiwan Semiconductor Corporation

6,000 -
TSM1NB60CP ROG

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1A (Tc) 10V 10Ohm @ 500mA, 10V Surface Mount 4.5V @ 250µA 6.1 nC @ 10 V 600 V ±30V 138 pF @ 25 V - - TO-252 (DPAK) - 39W (Tc) -55°C ~ 150°C (TJ)
TSM090N03ECP ROG

TSM090N03ECP ROG

MOSFET N-CHANNEL 30V 50A TO252

Taiwan Semiconductor Corporation

13,486 -
TSM090N03ECP ROG

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 9mOhm @ 16A, 10V Surface Mount 2.5V @ 250µA 7.7 nC @ 4.5 V 30 V ±20V 680 pF @ 25 V - - TO-252 (DPAK) - 40W (Tc) 150°C (TJ)
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