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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
TSM60NB1R4CH600V, 3A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
6,214 | - |
|
数据表 |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 3A (Tc) | 10V | 1.4Ohm @ 900mA, 10V | Through Hole | 4V @ 250µA | 7.12 nC @ 10 V | 600 V | ±30V | 257.3 pF @ 100 V | - | - | TO-251 (IPAK) | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TSM60NE285CP ROGMOSFET Taiwan Semiconductor Corporation |
5,000 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Tc) | 10V, 12V | 274mOhm @ 5A, 12V | Surface Mount | 6V @ 1.4mA | 22 nC @ 10 V | 600 V | ±30V | 884 pF @ 300 V | - | - | TO-252 (DPAK) | - | 139W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TQM019NH04LCR RLG40V, 100A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
4,995 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
TQM019NH04CR RLG40V, 100A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation |
4,980 | - |
|
数据表 |
PerFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Ta), 100A (Tc) | 7V, 10V | 1.9mOhm @ 50A, 10V | Surface Mount, Wettable Flank | 3.6V @ 250µA | 134 nC @ 10 V | 40 V | ±20V | 9044 pF @ 25 V | AEC-Q101 | - | 8-PDFNU (4.9x5.75) | Automotive | 150W (Tc) | -55°C ~ 175°C (TJ) |
|
TSM8N70CI C0GMOSFET N-CH 700V 8A ITO220AB Taiwan Semiconductor Corporation |
4,594 | - |
|
数据表 |
- | TO-220-3 Full Pack, Isolated Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 8A (Tc) | 10V | 900mOhm @ 4A, 10V | Through Hole | 4V @ 250µA | 32 nC @ 10 V | 700 V | ±30V | 2006 pF @ 25 V | - | - | ITO-220AB | - | 40W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TSM60NE200CIT C0GMOSFET Taiwan Semiconductor Corporation |
2,000 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 12A (Tc) | 10V, 12V | 185mOhm @ 4A, 12V | Through Hole | 6V @ 1.65mA | 30 nC @ 10 V | 600 V | ±30V | 1238 pF @ 300 V | - | - | ITO-220TL | - | 63W (Tc) | -55°C ~ 150°C (TJ) |
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|
TSM4NC50CP ROGMOSFET N-CHANNEL 500V 4A TO252 Taiwan Semiconductor Corporation |
9,355 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 4A (Tc) | 10V | 2.7Ohm @ 1.7A, 10V | Surface Mount | 3V @ 250µA | 12 nC @ 10 V | 500 V | ±20V | 453 pF @ 50 V | - | - | TO-252 (DPAK) | - | 83W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TSM190N08CZ C0GMOSFET N-CHANNEL 75V 190A TO220 Taiwan Semiconductor Corporation |
3,980 | - |
|
数据表 |
- | TO-220-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 190A (Tc) | 10V | 4.2mOhm @ 90A, 10V | Through Hole | 4V @ 250µA | 160 nC @ 10 V | 75 V | ±20V | 8600 pF @ 30 V | - | - | TO-220 | - | 250W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TSM60NE180CIT C0G600V, 13A, SINGLE N-CHANNEL HIGH Taiwan Semiconductor Corporation |
2,000 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V, 12V | 165mOhm @ 4.3A, 12V | Through Hole | 6V @ 1.8mA | 34 nC @ 10 V | 600 V | ±30V | 1417 pF @ 300 V | - | - | ITO-220TL | - | 63W (Tc) | -55°C ~ 150°C (TJ) |
|
|
TSM600NA25CIT C0G250V 22A SINGLE N-CHAN Taiwan Semiconductor Corporation |
3,897 | - |
|
数据表 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 10V | 60mOhm @ 11A, 10V | Through Hole | 4.2V @ 250µA | 71 nC @ 10 V | 250 V | ±30V | 3086 pF @ 125 V | - | - | ITO-220TL | - | 78W (Tc) | -55°C ~ 150°C (TJ) |
