Taiwan Semiconductor Corporation|场效应晶体管（FETs）、MOSFETs - 页 18

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
TSM170N06PQ56 60V, 44A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	5,224	-	询价单	数据表	-	8-PowerTDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	8A (Ta), 44A (Tc)	4.5V, 10V	17mOhm @ 8A, 10V	Surface Mount	2.5V @ 250µA	29 nC @ 10 V	60 V	±20V	1556 pF @ 30 V	-	-	8-PDFN (5x6)	-	2.6W (Ta), 73.5W (Tc)	-55°C ~ 150°C (TJ)
TSM60NC196CI C0G 600V, 20A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	3,840	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	20A (Tc)	10V	196mOhm @ 9.5A, 10V	Through Hole	5V @ 1mA	39 nC @ 10 V	600 V	±30V	1535 pF @ 300 V	-	-	ITO-220	-	70W (Tc)	-55°C ~ 150°C (TJ)
TSM900N10CH 100V, 15A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	9,860	-	询价单	数据表	-	TO-251-3 Stub Leads, IPAK	Tube	Active	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	4.5V, 10V	90mOhm @ 5A, 10V	Through Hole	2.5V @ 250µA	9.3 nC @ 10 V	100 V	±20V	1480 pF @ 50 V	-	-	TO-251S (IPAK SL)	-	50W (Tc)	-55°C ~ 150°C (TJ)
TSM60NE285CIT C0G MOSFET Taiwan Semiconductor Corporation	2,000	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	9.5A (Tc)	10V, 12V	274mOhm @ 3.2A, 12V	Through Hole	6V @ 1.4mA	22 nC @ 10 V	600 V	±30V	894 pF @ 300 V	-	-	ITO-220TL	-	56W (Tc)	-55°C ~ 150°C (TJ)
TSM051N04LCP 40V, 96A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	5,208	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	16A (Ta), 96A (Tc)	4.5V, 10V	5.1mOhm @ 16A, 10V	Surface Mount	2.5V @ 250µA	44.5 nC @ 10 V	40 V	±20V	2456 pF @ 20 V	-	-	TO-252 (DPAK)	-	2.6W (Ta), 89W (Tc)	-55°C ~ 150°C (TJ)
TSM60NC165CI C0G 600V, 24A, SINGLE N-CHANNEL POWE Taiwan Semiconductor Corporation	3,989	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	165mOhm @ 11.3A, 10V	Through Hole	5V @ 1mA	44 nC @ 10 V	600 V	±30V	1857 pF @ 300 V	-	-	ITO-220	-	89W (Tc)	-55°C ~ 150°C (TJ)
TSM100N06CZ C0G MOSFET N-CHANNEL 60V 100A TO220 Taiwan Semiconductor Corporation	4,871	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	100A (Tc)	10V	6.7mOhm @ 30A, 10V	Through Hole	4V @ 250µA	92 nC @ 10 V	60 V	±20V	4382 pF @ 30 V	-	-	TO-220	-	167W (Tc)	-55°C ~ 150°C (TJ)
TSM3N90CI C0G MOSFET N-CH 900V 2.5A ITO220AB Taiwan Semiconductor Corporation	6,494	-	询价单	数据表	-	TO-220-3 Full Pack, Isolated Tab	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.5A (Tc)	10V	5.1Ohm @ 1.25A, 10V	Through Hole	4V @ 250µA	17 nC @ 10 V	900 V	±30V	748 pF @ 25 V	-	-	ITO-220AB	-	94W (Tc)	150°C (TJ)
TSM60N380CZ C0G MOSFET N-CHANNEL 600V 11A TO220 Taiwan Semiconductor Corporation	3,717	-	询价单	数据表	-	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	380mOhm @ 5.5A, 10V	Through Hole	4V @ 250µA	20.5 nC @ 10 V	600 V	±30V	1040 pF @ 100 V	-	-	TO-220	-	125W (Tc)	-55°C ~ 150°C (TJ)
TSM60NB1R4CP 600V, 3A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation	8,926	-	询价单	数据表	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	3A (Tc)	10V	1.4Ohm @ 900mA, 10V	Surface Mount	4V @ 250µA	7.12 nC @ 10 V	600 V	±30V	257.3 pF @ 100 V	-	-	TO-252 (DPAK)	-	28.4W (Tc)	-55°C ~ 150°C (TJ)

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