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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
TSM300NB06CR RLG

TSM300NB06CR RLG

MOSFET N-CH 60V 6A/27A 8PDFN

Taiwan Semiconductor Corporation

2,591 -
TSM300NB06CR RLG

数据表

- 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Ta), 27A (Tc) 10V 30mOhm @ 6A, 10V Surface Mount 4.5V @ 250µA 18 nC @ 10 V 60 V ±20V 1110 pF @ 30 V - - 8-PDFN (5.2x5.75) - 3.1W (Ta), 56W (Tc) -55°C ~ 175°C (TJ)
TSM5NC50CZ

TSM5NC50CZ

500V, 5A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

9,211 -
TSM5NC50CZ

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.38Ohm @ 2.5A, 10V Through Hole 4.5V @ 250µA 15 nC @ 10 V 500 V ±30V 586 pF @ 50 V - - TO-220 - 89W (Tc) -55°C ~ 150°C (TJ)
TSM60NB380CF C0G

TSM60NB380CF C0G

MOSFET N-CH 600V 11A ITO220S

Taiwan Semiconductor Corporation

7,713 -
TSM60NB380CF C0G

数据表

- TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 380mOhm @ 2.7A, 10V Through Hole 4V @ 250µA 21 nC @ 10 V 600 V ±30V 810 pF @ 100 V - - ITO-220S - 62.5W (Tc) -55°C ~ 150°C (TJ)
TSM070NA04LCR RLG

TSM070NA04LCR RLG

MOSFET N-CH 40V 91A 8PDFN

Taiwan Semiconductor Corporation

5,787 -
TSM070NA04LCR RLG

数据表

- 8-PowerLDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 91A (Tc) 4.5V, 10V 7mOhm @ 14A, 10V Surface Mount 2.5V @ 250µA 23.5 nC @ 10 V 40 V ±20V 1469 pF @ 20 V - - 8-PDFN (5.2x5.75) - 113W (Tc) -55°C ~ 150°C (TJ)
TSM60NB900CH

TSM60NB900CH

600V, 4A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

9,171 -
TSM60NB900CH

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 900mOhm @ 1.2A, 10V Through Hole 4V @ 250µA 9.6 nC @ 10 V 600 V ±30V 315 pF @ 100 V - - TO-251 (IPAK) - 36.8W (Tc) -55°C ~ 150°C (TJ)
TSM60NB900CP

TSM60NB900CP

600V, 4A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

4,003 -
TSM60NB900CP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 900mOhm @ 1.2A, 10V Surface Mount 4V @ 250µA 9.6 nC @ 10 V 600 V ±30V 315 pF @ 100 V - - TO-252 (DPAK) - 36.8W (Tc) -55°C ~ 150°C (TJ)
TSM088NA03CR RLG

TSM088NA03CR RLG

MOSFET N-CH 30V 61A 8PDFN

Taiwan Semiconductor Corporation

4,259 -
TSM088NA03CR RLG

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 61A (Tc) 4.5V, 10V 8.8mOhm @ 13A, 10V Surface Mount 2.5V @ 250µA 12.6 nC @ 10 V 30 V ±20V 750 pF @ 15 V - - 8-PDFN (5x6) - 56W (Tc) -55°C ~ 150°C (TJ)
TSM70NB1R4CP

TSM70NB1R4CP

700V, 3A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

5,653 -
TSM70NB1R4CP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 1.4Ohm @ 1.2A, 10V Surface Mount 4V @ 250µA 7.4 nC @ 10 V 700 V ±30V 317 pF @ 100 V - - TO-252 (DPAK) - 28W (Tc) -55°C ~ 150°C (TJ)
TSM500N15CS

TSM500N15CS

150V, 11A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

6,353 -
TSM500N15CS

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Ta), 11A (Tc) 10V 50mOhm @ 4A, 10V Surface Mount 4V @ 250µA 20.5 nC @ 10 V 150 V ±20V 1123 pF @ 80 V - - 8-SOP - 12.7W (Ta) -55°C ~ 150°C (TJ)
TSM8N80CZ C0G

TSM8N80CZ C0G

MOSFET N-CHANNEL 800V 8A TO220

Taiwan Semiconductor Corporation

3,171 -
TSM8N80CZ C0G

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 1.05Ohm @ 4A, 10V Through Hole 4V @ 250µA 41 nC @ 10 V 800 V ±30V 1921 pF @ 25 V - - TO-220 - 40.3W (Tc) -55°C ~ 150°C (TJ)
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