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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STD70N6F3MOSFET N-CH 60V 70A DPAK STMicroelectronics |
2,302 | - |
|
数据表 |
STripFET™ III | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 70A (Tc) | 10V | 10.5mOhm @ 35A, 10V | Surface Mount | 4V @ 250µA | 35 nC @ 10 V | 60 V | ±20V | 2200 pF @ 25 V | - | - | DPAK | - | 110W (Tc) | -55°C ~ 175°C (TJ) |
|
|
STD7NM64NMOSFET N-CH 640V 5A DPAK STMicroelectronics |
2,496 | - |
|
数据表 |
MDmesh™ II | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 10V | 1.05Ohm @ 2.5A, 10V | Surface Mount | 4V @ 250µA | 14 nC @ 10 V | 640 V | ±25V | 363 pF @ 50 V | - | - | DPAK | - | 60W (Tc) | 150°C (TJ) |
|
STU7N80K5MOSFET N-CH 800V 6A IPAK STMicroelectronics |
2,699 | - |
|
数据表 |
SuperMESH5™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 10V | 1.2Ohm @ 3A, 10V | Through Hole | 5V @ 100µA | 13.4 nC @ 10 V | 800 V | ±30V | 360 pF @ 100 V | - | - | TO-251 (IPAK) | - | 110W (Tc) | -55°C ~ 150°C (TJ) |
|
SCT011H75G3AGMOSFET 750 V 110A H2PAK7 STMicroelectronics |
4,861 | - |
|
数据表 |
* | - | Cut Tape (CT) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
SCTWA70N120G2V-4DISCRETE STMicroelectronics |
9,541 | - |
|
数据表 |
- | TO-247-4 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 91A (Tc) | 18V | 30mOhm @ 50A, 18V | Through Hole | 4.9V @ 1mA | 150 nC @ 18 V | 1200 V | +22V, -10V | 3540 pF @ 800 V | - | - | TO-247-4 | - | 547W | -55°C ~ 200°C (TJ) |
|
STE139N65M5MOSFET N-CH 650V 130A ISOTOP STMicroelectronics |
4,387 | - |
|
数据表 |
MDmesh™ | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 130A (Tc) | 10V | 17mOhm @ 65A, 10V | Chassis Mount | 5V @ 250µA | 363 nC @ 10 V | 650 V | ±25V | 15600 pF @ 100 V | - | - | ISOTOP | - | 672W (Tc) | 150°C (TJ) |
|
STP5NK60ZMOSFET N-CH 600V 5A TO220AB STMicroelectronics |
1,103 | - |
|
数据表 |
SuperMESH™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 10V | 1.6Ohm @ 2.5A, 10V | Through Hole | 4.5V @ 50µA | 34 nC @ 10 V | 600 V | ±30V | 690 pF @ 25 V | - | - | TO-220 | - | 90W (Tc) | -55°C ~ 150°C (TJ) |
|
|
SCTH50N120-7SICFET N-CH 1200V 65A H2PAK-7 STMicroelectronics |
8,993 | - |
|
数据表 |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 65A | 20V | 69mOhm @ 40A, 20V | Surface Mount | 5.1V @ 1mA | 122 nC @ 20 V | 1200 V | +22V, -10V | 1900 pF @ 400 V | - | - | H2PAK-7 | - | 270W (Tc) | -55°C ~ 175°C (TJ) |
|
SCT30N120HSICFET N-CH 1200V 40A H2PAK-2 STMicroelectronics |
6,036 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 40A (Tc) | 20V | 100mOhm @ 20A, 20V | Surface Mount | 3.5V @ 1mA | 105 nC @ 20 V | 1200 V | +25V, -10V | 1700 pF @ 400 V | - | - | H2PAK-2 | - | 270W (Tc) | -55°C ~ 200°C (TJ) |
|
|
STE110NS20FDMOSFET N-CH 200V 110A ISOTOP STMicroelectronics |
2,812 | - |
|
数据表 |
MESH OVERLAY™ | ISOTOP | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 10V | 24mOhm @ 50A, 10V | Chassis Mount | 4V @ 250µA | 504 nC @ 10 V | 200 V | ±20V | 7900 pF @ 25 V | - | - | ISOTOP® | - | 500W (Tc) | 150°C (TJ) |
