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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STFI10NK60ZMOSFET N-CH 600V 10A I2PAKFP STMicroelectronics |
1,426 | - |
|
数据表 |
SuperMESH™ | TO-262-3 Full Pack, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 10V | 750mOhm @ 4.5A, 10V | Through Hole | 4.5V @ 250µA | 70 nC @ 10 V | 600 V | ±30V | 1370 pF @ 25 V | - | - | TO-281 (I2PAKFP) | - | 35W (Tc) | -55°C ~ 150°C (TJ) |
|
STL19N65M5MOSFET N-CH 650V 12.5A POWERFLAT STMicroelectronics |
2,408 | - |
|
数据表 |
MDmesh™ V | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 2.3A (Ta), 12.5A (Tc) | 10V | 240mOhm @ 7.5A, 10V | Surface Mount | 5V @ 250µA | 31 nC @ 10 V | 650 V | ±25V | 1240 pF @ 100 V | - | - | PowerFlat™ (8x8) HV | - | 2.8W (Ta), 90W (Tc) | 150°C (TJ) |
|
|
STFI15N95K5MOSFET N-CH 950V 7.5A I2PAKFP STMicroelectronics |
180 | - |
|
数据表 |
MDmesh™ K5 | TO-262-3 Full Pack, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7.5A (Ta) | 10V | 500mOhm @ 5.5A, 10V | Through Hole | 5V @ 100µA | 30 nC @ 10 V | 950 V | ±30V | 855 pF @ 10 V | - | - | TO-281 (I2PAKFP) | - | 30W | -55°C ~ 150°C (TJ) |
|
|
STFI15N65M5MOSFET N CH 650V 11A I2PAKFP STMicroelectronics |
1,396 | - |
|
数据表 |
MDmesh™ V | TO-262-3 Full Pack, I2PAK | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 11A (Tc) | 10V | 340mOhm @ 5.5A, 10V | Through Hole | 5V @ 250µA | 22 nC @ 10 V | 650 V | ±25V | 816 pF @ 100 V | - | - | TO-281 (I2PAKFP) | - | 30W (Tc) | 150°C (TJ) |
|
STF9NM60NMOSFET N-CH 600V 6.5A TO220FP STMicroelectronics |
1,359 | - |
|
数据表 |
MDmesh™ II | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 6.5A (Tc) | 10V | 745mOhm @ 3.25A, 10V | Through Hole | 4V @ 250µA | 17.4 nC @ 10 V | 600 V | ±25V | 452 pF @ 50 V | - | - | TO-220FP | - | 25W (Tc) | 150°C (TJ) |
|
STP141NF55MOSFET N-CH 55V 80A TO220AB STMicroelectronics |
998 | - |
|
数据表 |
STripFET™ II | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 8mOhm @ 40A, 10V | Through Hole | 4V @ 250µA | 142 nC @ 10 V | 55 V | ±20V | 5300 pF @ 25 V | - | - | TO-220 | - | 300W (Tc) | -55°C ~ 175°C (TJ) |
|
STF7NM60NMOSFET N-CH 600V 5A TO220FP STMicroelectronics |
820 | - |
|
数据表 |
MDmesh™ II | TO-220-5 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 5A (Tc) | 10V | 900mOhm @ 2.5A, 10V | Through Hole | 4V @ 250µA | 14 nC @ 10 V | 600 V | ±25V | 363 pF @ 50 V | - | - | TO-220FP | - | 20W (Tc) | 150°C (TJ) |
|
STB11N52K3MOSFET N-CH 525V 10A D2PAK STMicroelectronics |
936 | - |
|
数据表 |
SuperMESH3™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 10V | 510mOhm @ 5A, 10V | Surface Mount | 4.5V @ 50µA | 51 nC @ 10 V | 525 V | ±30V | 1400 pF @ 50 V | - | - | TO-263 (D2PAK) | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
|
STP11N52K3MOSFET N-CH 525V 10A TO220 STMicroelectronics |
564 | - |
|
数据表 |
SuperMESH3™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 10A (Tc) | 10V | 510mOhm @ 5A, 10V | Through Hole | 4.5V @ 50µA | 51 nC @ 10 V | 525 V | ±30V | 1400 pF @ 50 V | - | - | TO-220 | - | 125W (Tc) | -55°C ~ 150°C (TJ) |
|
STI28N60M2MOSFET N-CH 600V 22A I2PAK STMicroelectronics |
6,000 | - |
|
数据表 |
MDmesh™ M2 | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 22A (Tc) | 10V | 150mOhm @ 11A, 10V | Through Hole | 4V @ 250µA | 36 nC @ 10 V | 600 V | ±25V | 1440 pF @ 100 V | - | - | TO-262 (I2PAK) | - | 170W (Tc) | -55°C ~ 150°C (TJ) |
