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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STFH10N60M2

STFH10N60M2

MOSFET N-CH 600V 7.5A TO220FP

STMicroelectronics

1,660 -
STFH10N60M2

数据表

MDmesh™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 7.5A (Tc) 10V 600mOhm @ 9A, 10V Through Hole 4V @ 250µA 13.5 nC @ 10 V 600 V ±25V 400 pF @ 100 V - - TO-220FPAB - 25W (Tc) -55°C ~ 150°C (TJ)
SCTH60N120G2-7

SCTH60N120G2-7

SICFET N-CH 1200V 60A H2PAK-7

STMicroelectronics

2,479 -
SCTH60N120G2-7

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 60A (Tc) 18V 52mOhm @ 30A, 10V Surface Mount 5V @ 1mA 94 nC @ 18 V 1200 V +22V, -10V 1969 pF @ 800 V - - H2PAK-7 - 390W (Tc) -55°C ~ 175°C (TJ)
STP30N10F7

STP30N10F7

MOSFET N-CH 100V 32A TO220AB

STMicroelectronics

848 -
STP30N10F7

数据表

STripFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 24mOhm @ 16A, 10V Through Hole 4.5V @ 250µA 19 nC @ 10 V 100 V ±20V 1270 pF @ 50 V - - TO-220AB - 50W (Tc) -55°C ~ 175°C (TJ)
STFI12N60M2

STFI12N60M2

MOSFET N-CH 600V 9A I2PAKFP

STMicroelectronics

1,487 -
STFI12N60M2

数据表

MDmesh™ M2 TO-262-3 Full Pack, I2PAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 450mOhm @ 4.5A, 10V Through Hole 4V @ 250µA 16 nC @ 10 V 600 V ±25V 538 pF @ 100 V - - TO-281 (I2PAKFP) - 25W (Tc) -55°C ~ 150°C (TJ)
STFI8N80K5

STFI8N80K5

MOSFET N-CH 800V 6A I2PAKFP

STMicroelectronics

1,486 -
STFI8N80K5

数据表

SuperMESH5™ TO-262-3 Full Pack, I2PAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 950mOhm @ 3A, 10V Through Hole 5V @ 100µA 16.5 nC @ 10 V 800 V ±30V 450 pF @ 100 V - - TO-281 (I2PAKFP) - 25W (Tc) -55°C ~ 150°C (TJ)
STP52P3LLH6

STP52P3LLH6

MOSFET P-CHANNEL 30V 52A TO220

STMicroelectronics

946 -
STP52P3LLH6

数据表

STripFET™ H6 TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 52A (Tc) 4.5V, 10V - Through Hole - - 30 V - - - - TO-220 - 70W (Tc) -
STE48NM60

STE48NM60

MOSFET N-CH 650V 48A ISOTOP

STMicroelectronics

5,321 -
STE48NM60

数据表

MDmesh™ ISOTOP Tube Obsolete N-Channel MOSFET (Metal Oxide) 48A (Tc) 10V 110mOhm @ 22.5A, 10V Chassis Mount 5V @ 250µA 134 nC @ 10 V 650 V ±30V 3800 pF @ 25 V - - ISOTOP® - 450W (Tc) 150°C (TJ)
STD6N52K3

STD6N52K3

MOSFET N-CH 525V 5A DPAK

STMicroelectronics

2,713 -
STD6N52K3

数据表

SuperMESH3™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.2Ohm @ 2.5A, 10V Surface Mount 4.5V @ 100µA - 525 V ±30V - - - DPAK - 70W (Tc) 150°C (TJ)
STD130N4F6AG

STD130N4F6AG

MOSFET N-CH 40V 80A DPAK

STMicroelectronics

2,495 -
STD130N4F6AG

数据表

STripFET™ F6 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 3.6mOhm @ 40A, 10V Surface Mount 4V @ 250µA 70 nC @ 10 V 40 V ±20V 4260 pF @ 25 V AEC-Q101 - DPAK Automotive 143W (Tc) -55°C ~ 175°C (TJ)
STU8NM50N

STU8NM50N

MOSFET N-CH 500V 5A IPAK

STMicroelectronics

1,814 -
STU8NM50N

数据表

MDmesh™ II TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 790mOhm @ 2.5A, 10V Through Hole 4V @ 250µA 14 nC @ 10 V 500 V ±25V 364 pF @ 50 V - - IPAK - 45W (Tc) 150°C (TJ)
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