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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STU80N4F6

STU80N4F6

MOSFET N-CH 40V 80A TO251

STMicroelectronics

2,260 -
STU80N4F6

数据表

DeepGATE™, STripFET™ VI TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 6.3mOhm @ 40A, 10V Through Hole 4V @ 250µA 36 nC @ 10 V 40 V ±20V 2150 pF @ 25 V - - TO-251 (IPAK) - 70W (Tc) -55°C ~ 175°C (TJ)
STP10NM60ND

STP10NM60ND

MOSFET N-CH 600V 8A TO220

STMicroelectronics

626 -
STP10NM60ND

数据表

FDmesh™ II TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 600mOhm @ 4A, 10V Through Hole 5V @ 250µA 20 nC @ 10 V 600 V ±25V 577 pF @ 50 V - - TO-220 - 70W (Tc) -55°C ~ 150°C (TJ)
STH250N55F3-6

STH250N55F3-6

MOSFET N-CH 55V 180A H2PAK

STMicroelectronics

980 -
STH250N55F3-6

数据表

STripFET™ III TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 2.6mOhm @ 60A, 10V Surface Mount 4V @ 250µA 100 nC @ 10 V 55 V ±20V 6800 pF @ 25 V - - H2PAK - 300W (Tc) -55°C ~ 175°C (TJ)
STB3N62K3

STB3N62K3

MOSFET N-CH 620V 2.7A D2PAK

STMicroelectronics

2,086 -
STB3N62K3

数据表

SuperMESH3™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.7A (Tc) 10V 2.5Ohm @ 1.4A, 10V Surface Mount 4.5V @ 50µA 13 nC @ 10 V 620 V ±30V 385 pF @ 25 V - - D2PAK - 45W (Tc) 150°C (TJ)
STD120N4F6

STD120N4F6

MOSFET N-CH 40V 80A DPAK

STMicroelectronics

718 -
STD120N4F6

数据表

DeepGATE™, STripFET™ VI TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 10V 4mOhm @ 40A, 10V Surface Mount 4V @ 250µA 65 nC @ 10 V 40 V ±20V 3850 pF @ 25 V AEC-Q101 - DPAK Automotive 110W (Tc) -55°C ~ 175°C (TJ)
STFI15NM65N

STFI15NM65N

MOSFET N-CH 650V 12A I2PAKFP

STMicroelectronics

347 -
STFI15NM65N

数据表

MDmesh™ II TO-262-3 Full Pack, I2PAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 380mOhm @ 6A, 10V Through Hole 4V @ 250µA 33.3 nC @ 10 V 650 V ±25V 983 pF @ 50 V - - TO-281 (I2PAKFP) - 30W (Tc) -55°C ~ 150°C (TJ)
STL13N60M2

STL13N60M2

MOSFET N-CH 600V 7A POWERFLAT HV

STMicroelectronics

1,361 -
STL13N60M2

数据表

MDmesh™ II Plus 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 420mOhm @ 4.5A, 10V Surface Mount 4V @ 250µA 17 nC @ 10 V 600 V ±25V 580 pF @ 100 V - - PowerFlat™ (5x6) HV - 55W (Tc) 150°C (TJ)
STE30NK90Z

STE30NK90Z

MOSFET N-CH 900V 28A ISOTOP

STMicroelectronics

5,554 -
STE30NK90Z

数据表

SuperMESH™ ISOTOP Tube Obsolete N-Channel MOSFET (Metal Oxide) 28A (Tc) 10V 260mOhm @ 14A, 10V Chassis Mount 4.5V @ 150µA 490 nC @ 10 V 900 V ±30V 12000 pF @ 25 V - - ISOTOP® - 500W (Tc) -65°C ~ 150°C (TJ)
STFI6N62K3

STFI6N62K3

MOSFET N CH 620V 5.5A I2PAKFP

STMicroelectronics

1,500 -
STFI6N62K3

数据表

SuperMESH3™ TO-262-3 Full Pack, I2PAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 1.2Ohm @ 2.8A, 10V Through Hole 4.5V @ 50µA 34 nC @ 10 V 620 V ±30V 875 pF @ 50 V - - TO-281 (I2PAKFP) - 30W (Tc) 150°C (TJ)
STFI7LN80K5

STFI7LN80K5

MOSFET N-CH 800V 5A I2PAKFP

STMicroelectronics

1,499 -
STFI7LN80K5

数据表

MDmesh™ TO-262-3 Full Pack, I2PAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 1.15Ohm @ 2.5A, 10V Through Hole 5V @ 100µA 12 nC @ 10 V 800 V ±30V 270 pF @ 100 V - - TO-281 (I2PAKFP) - 25W (Tc) -55°C ~ 150°C (TJ)
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