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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DMP3018SFK-7

DMP3018SFK-7

MOSFET P-CH 30V 10.2A 6UDFN

Diodes Incorporated

2,588 -
DMP3018SFK-7

数据表

- 6-PowerUDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 10.2A (Ta) 4.5V, 10V 14.5mOhm @ 9.5A, 10V Surface Mount 3V @ 250µA 90 nC @ 10 V 30 V ±25V 4414 pF @ 15 V - - U-DFN2523-6 - 1W (Ta) -55°C ~ 150°C (TJ)
DMP2022LSSQ-13

DMP2022LSSQ-13

MOSFET P-CH 20V 9.3A 8SO

Diodes Incorporated

2,542 -
DMP2022LSSQ-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 9.3A (Ta) 2.5V, 10V 13mOhm @ 10A, 10V Surface Mount 1.1V @ 250µA 60.2 nC @ 10 V 20 V ±12V 2575 pF @ 10 V AEC-Q101 - 8-SO Automotive 1.6W (Ta) -55°C ~ 155°C (TJ)
DMP2021UTSQ-13

DMP2021UTSQ-13

MOSFET BVDSS: 8V 24V TSSOP-8 T&R

Diodes Incorporated

2,500 -
DMP2021UTSQ-13

数据表

- - Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 7.4A (Ta), 18A (Tc) 1.8V, 4.5V 16mOhm @ 4.5A, 4.5V Surface Mount 1V @ 250µA 59 nC @ 8 V 20 V ±10V 2760 pF @ 15 V AEC-Q101 - - Automotive 1.3W (Ta) -55°C ~ 150°C (TJ)
IRFHM8330TRPBF

IRFHM8330TRPBF

MOSFET N-CH 30V 16A 8PQFN

Infineon Technologies

9,011 -
IRFHM8330TRPBF

数据表

HEXFET® 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16A (Ta) 4.5V, 10V 6.6mOhm @ 20A, 10V Surface Mount 2.35V @ 25µA 20 nC @ 10 V 30 V ±20V 1450 pF @ 25 V - - 8-PQFN (3.3x3.3), Power33 - 2.7W (Ta), 33W (Tc) -55°C ~ 150°C (TJ)
DMT6006LSS-13

DMT6006LSS-13

MOSFET BVDSS: 41V~60V SO-8 T&R 2

Diodes Incorporated

2,500 -
DMT6006LSS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.9A (Ta) 4.5V, 10V 6.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 34.9 nC @ 10 V 60 V ±20V 2162 pF @ 30 V - - 8-SO - 1.38W (Ta) -55°C ~ 150°C (TJ)
NVD3055-094T4G-VF01

NVD3055-094T4G-VF01

MOSFET N-CH 60V 12A DPAK

onsemi

2,289 -
NVD3055-094T4G-VF01

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Ta) 10V 94mOhm @ 6A, 10V Surface Mount 4V @ 250µA 20 nC @ 10 V 60 V ±20V 450 pF @ 25 V AEC-Q101 - DPAK Automotive 1.5W (Ta) -55°C ~ 175°C (TJ)
XP4459M

XP4459M

MOSFET P-CH 30V 11.3A 8SO

YAGEO XSEMI

1,000 -
XP4459M

数据表

XP4459 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 11.3A (Ta) 4.5V, 10V 13.5mOhm @ 10A, 10V Surface Mount 3V @ 250µA 64 nC @ 10 V 30 V ±20V 3360 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
TPH8R808QM,LQ

TPH8R808QM,LQ

80V UMOS9-H SOP-ADVANCE(N) 8.8MO

Toshiba Semiconductor and Storage

9,829 -
TPH8R808QM,LQ

数据表

U-MOSX-H 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 79A (Ta), 52A (Tc) 6V, 10V 8.8mOhm @ 26A, 10V Surface Mount 3.5V @ 300µA 26 nC @ 10 V 80 V ±20V 1750 pF @ 40 V - - 8-SOP Advance (5x5.75) - 3W (Ta), 109W (Tc) 175°C
DMPH3010LK3-13

DMPH3010LK3-13

MOSFET P-CHANNEL 30V 50A TO252

Diodes Incorporated

1,039 -
DMPH3010LK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 7.5mOhm @ 10A, 10V Surface Mount 2.1V @ 250µA 139 nC @ 10 V 30 V ±20V 6807 pF @ 15 V - - TO-252 (DPAK) - 3.9W (Ta) -55°C ~ 175°C (TJ)
NVMFWS040N10MCLT1G

NVMFWS040N10MCLT1G

PTNG 100V LL SO8FL

onsemi

680 -
NVMFWS040N10MCLT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.5A (Ta), 21A (Tc) 4.5V, 10V 38mOhm @ 5A, 10V Surface Mount, Wettable Flank 3V @ 26µA 8.3 nC @ 10 V 100 V ±20V 500 pF @ 50 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.5W (Ta), 36W (Tc) -55°C ~ 175°C (TJ)
SQJ860EP-T1_GE3

SQJ860EP-T1_GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix

14,730 -
SQJ860EP-T1_GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 6mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 55 nC @ 10 V 40 V ±20V 2700 pF @ 25 V AEC-Q101 - PowerPAK® SO-8 Automotive 48W (Tc) -55°C ~ 175°C (TJ)
PJQ4568AP-AU_R2_002A1

PJQ4568AP-AU_R2_002A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

5,000 -
PJQ4568AP-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
AOI360A70

AOI360A70

MOSFET N-CH 700V 12A TO251A

Alpha & Omega Semiconductor Inc.

4,432 -
AOI360A70

数据表

aMOS5™ TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 360mOhm @ 6A, 10V Through Hole 4V @ 250µA 22.5 nC @ 10 V 700 V ±20V 1360 pF @ 100 V - - TO-251A - 138W (Tc) -55°C ~ 150°C (TJ)
SQ3426EV-T1_BE3

SQ3426EV-T1_BE3

MOSFET N-CHANNEL 60V 7A 6TSOP

Vishay Siliconix

9,126 -
SQ3426EV-T1_BE3

数据表

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7A (Tc) 4.5V, 10V 42mOhm @ 5A, 10V Surface Mount 2.5V @ 250µA 12 nC @ 4.5 V 60 V ±20V 720 pF @ 30 V AEC-Q101 - 6-TSOP Automotive 5W (Tc) -55°C ~ 175°C (TJ)
SI6443DQ-T1-GE3

SI6443DQ-T1-GE3

MOSFET P-CH 30V 7.3A 8TSSOP

Vishay Siliconix

6,337 -
SI6443DQ-T1-GE3

数据表

TrenchFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 7.3A (Ta) 4.5V, 10V 12mOhm @ 8.8A, 10V Surface Mount 3V @ 250µA 60 nC @ 5 V 30 V ±20V - - - 8-TSSOP - 1.05W (Ta) -55°C ~ 150°C (TJ)
SI6443DQ-T1-E3

SI6443DQ-T1-E3

MOSFET P-CH 30V 7.3A 8TSSOP

Vishay Siliconix

2,304 -
SI6443DQ-T1-E3

数据表

TrenchFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 7.3A (Ta) 4.5V, 10V 12mOhm @ 8.8A, 10V Surface Mount 3V @ 250µA 60 nC @ 5 V 30 V ±20V - - - 8-TSSOP - 1.05W (Ta) -55°C ~ 150°C (TJ)
SI7156DP-T1-E3

SI7156DP-T1-E3

MOSFET N-CH 40V 50A PPAK SO-8

Vishay Siliconix

6,511 -
SI7156DP-T1-E3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V Surface Mount 3V @ 250µA 155 nC @ 10 V 40 V ±20V 6900 pF @ 20 V - - PowerPAK® SO-8 - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ)
SI7156DP-T1-GE3

SI7156DP-T1-GE3

MOSFET N-CH 40V 50A PPAK SO-8

Vishay Siliconix

7,645 -
SI7156DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 3.5mOhm @ 20A, 10V Surface Mount 3V @ 250µA 155 nC @ 10 V 40 V ±20V 6900 pF @ 20 V - - PowerPAK® SO-8 - 5.4W (Ta), 83W (Tc) -55°C ~ 150°C (TJ)
SPB80N03S2L-06 G

SPB80N03S2L-06 G

MOSFET N-CH 30V 80A TO263-3

Infineon Technologies

8,690 -
SPB80N03S2L-06 G

数据表

OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 5.9mOhm @ 80A, 10V Surface Mount 2V @ 80µA 68 nC @ 10 V 30 V ±20V 2530 pF @ 25 V - - PG-TO263-3-2 - 150W (Tc) -55°C ~ 175°C (TJ)
MCAC95N06YB-TP

MCAC95N06YB-TP

MOSFET N-CH 60 95A DFN5060

Micro Commercial Co

2,517 -
MCAC95N06YB-TP

数据表

- 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 95A (Tc) 10V 2.9mOhm @ 20A, 10V Surface Mount 4V @ 250µA 93 nC @ 10 V 60 V ±20V 5950 pF @ 25 V - - DFN5060 - 120W -55°C ~ 150°C
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