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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PJQ5548V-AU_R2_002A1

PJQ5548V-AU_R2_002A1

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJQ5548V-AU_R2_002A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13.6A (Ta), 45A (Tc) 7V, 10V 10mOhm @ 20A, 10V Surface Mount 3.5V @ 50µA 9.5 nC @ 10 V 40 V ±20V 673 pF @ 25 V AEC-Q101 - DFN5060-8 Automotive 3.3W (Ta), 36W (Tc) -55°C ~ 175°C (TJ)
PJQ5534-AU_R2_002A1

PJQ5534-AU_R2_002A1

30V N-CHANNEL (LL) SGT MOSFET

Panjit International Inc.

3,000 -
PJQ5534-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJQ5437E-AU_R2_006A1

PJQ5437E-AU_R2_006A1

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

2,970 -
PJQ5437E-AU_R2_006A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 11.8A (Ta), 42A (Tc) 4.5V, 10V 15mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 32 nC @ 10 V 30 V ±25V 1270 pF @ 25 V AEC-Q101 - DFN5060-8 Automotive 3.3W (Ta), 42W (Tc) -55°C ~ 175°C (TJ)
NTMFS3D1N04XMT1G

NTMFS3D1N04XMT1G

40V T10M IN S08FL PACKAGE

onsemi

1,480 -
NTMFS3D1N04XMT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25A (Ta), 83A (Tc) 10V 3.1mOhm @ 20A, 10V Surface Mount 3.5V @ 40µA 15.6 nC @ 10 V 40 V ±20V 1002 pF @ 20 V - - 5-DFN (5x6) (8-SOFL) - 39W (Tc) -55°C ~ 175°C (TJ)
NTMS4177PR

NTMS4177PR

MOSFET P-CH 30V 6.6A 8SOIC

UMW

5,317 -
NTMS4177PR

数据表

* 8-SOIC (0.154", 3.90mm Width) Active P-Channel MOSFET (Metal Oxide) 6.6A (Ta) 4.5V, 10V 12mOhm @ 11.4A, 10V Surface Mount 2.5V @ 250µA - 30 V ±20V - - - 8-SOIC - 840mW (Ta) -55°C ~ 155°C (TJ)
NVMFS6H858NLWFT1G

NVMFS6H858NLWFT1G

MOSFET N-CH 80V 8.7A/30A 5DFN

onsemi

1,100 -
NVMFS6H858NLWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8.7A (Ta), 30A (Tc) 4.5V, 10V 19.5mOhm @ 5A, 10V Surface Mount, Wettable Flank 2V @ 30µA 12 nC @ 10 V 80 V ±20V 623 pF @ 40 V AEC-Q101 - 5-DFNW (4.9x5.9) (8-SOFL-WF) Automotive 3.5W (Ta), 42W (Tc) -55°C ~ 175°C (TJ)
IRLL110TR

IRLL110TR

MOSFET N-CH 100V 1.5A SOT223

UMW

6,635 -
IRLL110TR

数据表

* - Active - - - - - - - - - - - - - - - - -
IRF7413ZTRPBFXTMA1

IRF7413ZTRPBFXTMA1

TRENCH <= 40V

Infineon Technologies

3,938 -
IRF7413ZTRPBFXTMA1

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Ta) 4.5V, 10V 10mOhm @ 13A, 10V Surface Mount 2.25V @ 250µA 14 nC @ 4.5 V 30 V ±20V 1210 pF @ 15 V - - PG-DSO-8-902 - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDS6676AS

FDS6676AS

MOSFET N-CH 30V 14.5A 8SOIC

UMW

7,223 -
FDS6676AS

数据表

* - Active - - - - - - - - - - - - - - - - -
DMP3012LPS-13

DMP3012LPS-13

MOSFET P-CH 30V 13.2A PWRDI5060

Diodes Incorporated

2,441 -
DMP3012LPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 13.2A (Ta) 4.5V, 10V 9mOhm @ 10A, 10V Surface Mount 2.1V @ 250µA 139 nC @ 10 V 30 V ±20V 6807 pF @ 15 V - - PowerDI5060-8 - 1.29W (Ta) -55°C ~ 150°C (TJ)
IRF7456TR

IRF7456TR

MOSFET N-CH 20V 16A 8SOIC

UMW

6,210 -
IRF7456TR

数据表

* - Active - - - - - - - - - - - - - - - - -
DMP3007SPS-13

DMP3007SPS-13

MOSFET P-CH 30V 90A PWRDI5060-8

Diodes Incorporated

2,399 -
DMP3007SPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 7mOhm @ 15A, 10V Surface Mount 3V @ 250µA 64.2 nC @ 10 V 30 V ±25V 2826 pF @ 15 V - - PowerDI5060-8 - 2.7W (Ta) -55°C ~ 150°C (TJ)
FDS6680A

FDS6680A

MOSFET N-CH 30V 12.5A 8SOIC

UMW

7,382 -
FDS6680A

数据表

* - Active - - - - - - - - - - - - - - - - -
DMP6023LFG-13

DMP6023LFG-13

MOSFET P-CH 60V 7.7A PWRDI3333-8

Diodes Incorporated

2,293 -
DMP6023LFG-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 7.7A (Ta) 4.5V, 10V 25mOhm @ 5A, 10V Surface Mount 3V @ 250µA 53.1 nC @ 10 V 60 V ±20V 2569 pF @ 30 V - - POWERDI3333-8 - 1W (Ta) -55°C ~ 150°C (TJ)
FQPF10N60CT

FQPF10N60CT

MOSFET N-CH 600V 9.5A TO220F

onsemi

8,282 -
FQPF10N60CT

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.5A (Tc) 10V 730mOhm @ 4.75A, 10V Through Hole 4V @ 250µA 57 nC @ 10 V 600 V ±30V 2040 pF @ 25 V - - TO-220F-3 - 50W (Tc) -55°C ~ 150°C (TJ)
RF4P025ATTCR

RF4P025ATTCR

PCH -100V -2.5A POWER MOSFET

Rohm Semiconductor

2,072 -
RF4P025ATTCR

数据表

- 8-PowerUDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2.5A (Ta) 4.5V, 10V 260mOhm @ 2.5A, 10V Surface Mount 2.5V @ 1mA 19.7 nC @ 10 V 100 V ±20V 590 pF @ 50 V - - HUML2020L8 - 2W (Ta) 150°C (TJ)
IPP018N03LF2SAKSA1

IPP018N03LF2SAKSA1

TRENCH <= 40V

Infineon Technologies

1,973 -
IPP018N03LF2SAKSA1

数据表

StrongIRFET™ 2 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 35A (Ta), 128A (Tc) 4.5V, 10V 1.8mOhm @ 100A, 10V Through Hole 2.35V @ 110µA 143 nC @ 10 V 30 V ±20V 6400 pF @ 15 V - - PG-TO220-3-U05 - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ)
PSMN034-100PS,127

PSMN034-100PS,127

MOSFET N-CH 100V 32A TO220AB

Nexperia USA Inc.

9,263 -
PSMN034-100PS,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 32A (Tc) 10V 34.5mOhm @ 15A, 10V Through Hole 4V @ 1mA 23.8 nC @ 10 V 100 V ±20V 1201 pF @ 50 V - - TO-220AB - 86W (Tc) -55°C ~ 175°C (TJ)
IRLD120PBF

IRLD120PBF

MOSFET N-CH 100V 1.3A 4DIP

Vishay Siliconix

3,470 -
IRLD120PBF

数据表

- 4-DIP (0.300", 7.62mm) Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.3A (Ta) 4V, 5V 270mOhm @ 780mA, 5V Through Hole 2V @ 250µA 12 nC @ 5 V 100 V ±10V 490 pF @ 25 V - - 4-HVMDIP - 1.3W (Ta) -55°C ~ 175°C (TJ)
NVTFWS040N10MCLTAG

NVTFWS040N10MCLTAG

PTNG 100V LL U8FL

onsemi

1,269 -
NVTFWS040N10MCLTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.1A (Ta), 21A (Tc) 4.5V, 10V 38mOhm @ 5A, 10V Surface Mount 3V @ 26µA 8.6 nC @ 10 V 100 V ±20V 520 pF @ 50 V AEC-Q101 - 8-WDFN (3.3x3.3) Automotive 3.1W (Ta), 36W (Tc) -55°C ~ 175°C (TJ)
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