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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PSMN027-100PS,127

PSMN027-100PS,127

MOSFET N-CH 100V 37A TO220AB

Nexperia USA Inc.

8,423 -
PSMN027-100PS,127

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 37A (Tc) 10V 26.8mOhm @ 15A, 10V Through Hole 4V @ 1mA 30 nC @ 10 V 100 V ±20V 1624 pF @ 50 V - - TO-220AB - 103W (Tc) -55°C ~ 175°C (TJ)
NVMYS022N06CTWG

NVMYS022N06CTWG

T6 60V SL LFPAK4 5X6

onsemi

3,000 -
NVMYS022N06CTWG

数据表

* SOT-1023, 4-LFPAK Tape & Reel (TR) Active - - - - - Surface Mount - - - - - - - LFPAK4 (5x6) - - -
SPP73N03S2L08XK

SPP73N03S2L08XK

MOSFET N-CH 30V 73A TO220-3

Infineon Technologies

3,358 -
SPP73N03S2L08XK

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 73A (Tc) 4.5V, 10V 8.4mOhm @ 36A, 10V Through Hole 2V @ 55µA 46.2 nC @ 10 V 30 V ±20V 1710 pF @ 25 V - - PG-TO220-3-1 - 107W (Tc) -55°C ~ 175°C (TJ)
NVTYS010N04CLTWG

NVTYS010N04CLTWG

T6 40V N-CH LL IN LFPAK33

onsemi

2,884 -
NVTYS010N04CLTWG

数据表

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 43A (Tc) 4.5V, 10V 9.5mOhm @ 10A, 10V Surface Mount 2.2V @ 20µA 12 nC @ 10 V 40 V ±20V 710 pF @ 25 V AEC-Q101 - 8-LFPAK Automotive 3W (Ta), 32W (Tc) -55°C ~ 175°C (TJ)
SI7344DP-T1-E3

SI7344DP-T1-E3

MOSFET N-CH 20V 11A PPAK SO-8

Vishay Siliconix

5,523 -
SI7344DP-T1-E3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta) 4.5V, 10V 8mOhm @ 17A, 10V Surface Mount 2.1V @ 250µA 15 nC @ 4.5 V 20 V ±20V - - - PowerPAK® SO-8 - 1.8W (Ta) -55°C ~ 150°C (TJ)
RF4P060BGTCR

RF4P060BGTCR

NCH 100V 6A, HUML2020L8, POWER M

Rohm Semiconductor

2,380 -
RF4P060BGTCR

数据表

- 8-PowerUDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 4.5V, 10V 53mOhm @ 6A, 10V Surface Mount 2.5V @ 1mA 6.7 nC @ 10 V 100 V ±20V 305 pF @ 50 V - - DFN2020-8S - 2W (Ta) 150°C (TJ)
IRFBE20PBF-BE3

IRFBE20PBF-BE3

MOSFET N-CH 800V 1.8A TO220AB

Vishay Siliconix

7,539 -
IRFBE20PBF-BE3

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 1.8A (Tc) - 6.5Ohm @ 1.1A, 10V Through Hole 4V @ 250µA 38 nC @ 10 V 800 V ±20V 530 pF @ 25 V - - TO-220AB - 54W (Tc) -55°C ~ 150°C (TJ)
DMT15H053SK3-13

DMT15H053SK3-13

MOSFET BVDSS: 101V~250V TO252 T&

Diodes Incorporated

2,258 -
DMT15H053SK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 21A (Tc) 10V 60mOhm @ 20A, 10V Surface Mount 4V @ 250µA 11.5 nC @ 10 V 150 V ±20V 814 pF @ 75 V - - TO-252 (DPAK) - 1.7W (Ta) -55°C ~ 150°C (TJ)
HUFA75329S3ST

HUFA75329S3ST

MOSFET N-CH 55V 49A D2PAK

onsemi

3,128 -
HUFA75329S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 49A (Tc) 10V 24mOhm @ 49A, 10V Surface Mount 4V @ 250µA 75 nC @ 20 V 55 V ±20V 1060 pF @ 25 V - - TO-263 (D2PAK) - 128W (Tc) -55°C ~ 175°C (TJ)
AOI450A70

AOI450A70

N

Alpha & Omega Semiconductor Inc.

7,023 -
AOI450A70

数据表

aMOS5™ TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 450mOhm @ 2.3A, 10V Through Hole 3.6V @ 250µA 20 nC @ 10 V 700 V ±20V 1115 pF @ 100 V - - TO-251A - 125W (Tc) -55°C ~ 150°C (TJ)
AONS66524

AONS66524

N

Alpha & Omega Semiconductor Inc.

7,733 -
AONS66524

数据表

AlphaSGT™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 56A (Tc) 8V, 10V 16mOhm @ 20A, 10V Surface Mount 3.7V @ 250µA 35 nC @ 10 V 150 V ±20V 1780 pF @ 75 V - - 8-DFN (5x6) - 6.2W (Ta), 119W (Tc) -55°C ~ 150°C (TJ)
AOD450A70

AOD450A70

N

Alpha & Omega Semiconductor Inc.

7,596 -
AOD450A70

数据表

aMOS5™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 450mOhm @ 2.3A, 10V Surface Mount 3.6V @ 250µA 20 nC @ 10 V 700 V ±20V 1115 pF @ 100 V - - TO-252 (DPAK) - 125W (Tc) -55°C ~ 150°C (TJ)
XP15NA9R3CXT

XP15NA9R3CXT

MOSFET N CH 150V 16.1A PMPAK5X6

YAGEO XSEMI

4,782 -
XP15NA9R3CXT

数据表

XP15NA9R3C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16.1A (Ta), 96A (Tc) 10V 9.3mOhm @ 20A, 10V Surface Mount 4V @ 250µA 109 nC @ 10 V 150 V ±20V 5280 pF @ 75 V - - 8-PMPAK (5x6) - 6W (Ta), 214.2W (Tc) -55°C ~ 175°C (TJ)
AOTF600A70FL

AOTF600A70FL

MOSFET N-CH 700V 8.5A TO220F

Alpha & Omega Semiconductor Inc.

7,123 -
AOTF600A70FL

数据表

aMOS5™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 8.5A (Tj) 10V 600mOhm @ 2.5A, 10V Through Hole 4V @ 250µA 14.5 nC @ 10 V 700 V ±20V 900 pF @ 100 V - - TO-220F - 26W (Tc) -55°C ~ 150°C (TJ)
AOT600A70FL

AOT600A70FL

MOSFET N-CH 700V 8.5A TO220

Alpha & Omega Semiconductor Inc.

3,269 -
AOT600A70FL

数据表

aMOS5™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 8.5A (Tc) 10V 600mOhm @ 2.5A, 10V Through Hole 4V @ 250µA 14.5 nC @ 10 V 700 V ±20V 900 pF @ 100 V - - TO-220 - 104W (Tc) -55°C ~ 150°C (TJ)
PSMN3R5-40YSBX

PSMN3R5-40YSBX

PSMN3R5-40YSB/SOT669/LFPAK

Nexperia USA Inc.

1,500 -
PSMN3R5-40YSBX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 10V 3.5mOhm @ 25A, 10V Surface Mount 3.6V @ 1mA 42 nC @ 10 V 40 V ±20V 3220 pF @ 20 V - Schottky Diode (Body) LFPAK56, Power-SO8 - 115W (Tc) -55°C ~ 175°C (TJ)
AOT600A70L

AOT600A70L

MOSFET N-CH 700V 8.5A TO220

Alpha & Omega Semiconductor Inc.

8,978 -
AOT600A70L

数据表

aMOS5™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 8.5A (Tc) 10V 600mOhm @ 2.5A, 10V Through Hole 3.5V @ 250µA 15.5 nC @ 10 V 700 V ±20V 870 pF @ 100 V - - TO-220 - 104W (Tc) -55°C ~ 150°C (TJ)
DMTH8012LPSW-13

DMTH8012LPSW-13

MOSFET N-CH 80V 53.7A PWRDI5060

Diodes Incorporated

1,230 -
DMTH8012LPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 53.7A (Tc) 4.5V, 10V 17mOhm @ 12A, 10V Surface Mount 3V @ 250µA 34 nC @ 10 V 80 V ±20V 1949 pF @ 40 V - - PowerDI5060-8 (Type Q) - 3.1W (Ta) -55°C ~ 175°C (TJ)
64-4051

64-4051

MOSFET N-CH 55V 16A DPAK

Infineon Technologies

9,082 -
64-4051

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 16A (Tc) 4.5V, 10V 58mOhm @ 9.6A, 10V Surface Mount 3V @ 250µA 9.9 nC @ 5 V 55 V ±16V 380 pF @ 25 V - - TO-252AA (DPAK) - 35W (Tc) -55°C ~ 175°C (TJ)
XP3N5R0M

XP3N5R0M

MOSFET N-CH 30V 17.4A 8SO

YAGEO XSEMI

1,000 -
XP3N5R0M

数据表

XP3N5R0 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17.4A (Ta) 4.5V 5mOhm @ 16A, 10V Surface Mount 3V @ 250µA 33.6 nC @ 4.5 V 30 V ±20V 3040 pF @ 15 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
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