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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
ZXM66P02N8TC

ZXM66P02N8TC

MOSFET P-CH 20V 6.4A 8SO

Diodes Incorporated

8,514 -
ZXM66P02N8TC

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6.4A (Ta) 2.5V, 4.5V 25mOhm @ 3.2A, 4.5V Surface Mount 700mV @ 250µA (Min) 43.3 nC @ 4.5 V 20 V ±12V 2068 pF @ 15 V - - 8-SO - 1.56W (Ta) -55°C ~ 150°C (TJ)
IAUC26N10S5L245ATMA1

IAUC26N10S5L245ATMA1

MOSFET_(75V 120V( PG-TDSON-8

Infineon Technologies

4,728 -
IAUC26N10S5L245ATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 26A (Tj) 4.5V, 10V 24.5mOhm @ 13A, 10V Surface Mount 2.2V @ 13µA 12 nC @ 10 V 100 V ±20V 762 pF @ 50 V - - PG-TDSON-8-33 - 40W (Tc) -55°C ~ 175°C (TJ)
DMT47M2SFVWQ-13

DMT47M2SFVWQ-13

MOSFET N-CH 40V PWRDI3333

Diodes Incorporated

3,000 -
DMT47M2SFVWQ-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15.4A (Ta), 49.1A (Tc) 10V 7.5mOhm @ 20A, 10V Surface Mount, Wettable Flank 4V @ 250µA 12.1 nC @ 10 V 40 V ±20V 897 pF @ 20 V AEC-Q101 - PowerDI3333-8 (SWP) Type UX Automotive 2.67W (Ta), 27.1W (Tc) -55°C ~ 150°C (TJ)
PJQ5530-AU_R2_002A1

PJQ5530-AU_R2_002A1

30V N-CHANNEL (LL) SGT MOSFET

Panjit International Inc.

3,000 -
PJQ5530-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJQ5435E_R2_00201

PJQ5435E_R2_00201

30V P-CHANNEL STANDARD TRENCH MO

Panjit International Inc.

3,000 -
PJQ5435E_R2_00201

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SQJA88EP-T1_GE3

SQJA88EP-T1_GE3

MOSFET N-CH 40V 30A PPAK SO-8

Vishay Siliconix

2,936 -
SQJA88EP-T1_GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 7mOhm @ 8A, 10V Surface Mount 2.5V @ 250µA 35 nC @ 10 V 40 V ±20V 1800 pF @ 25 V AEC-Q101 - PowerPAK® SO-8 Automotive 48W (Tc) -55°C ~ 175°C (TJ)
STFU13N60M2

STFU13N60M2

MOSFET N-CH 600V TO-220FP

STMicroelectronics

9,022 -
STFU13N60M2

数据表

MDmesh™ M2 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 380mOhm @ 5.5A, 10V Through Hole 4V @ 250µA 17 nC @ 10 V 600 V ±25V 580 pF @ 100 V - - TO-220FP - 25W (Tc) -55°C ~ 150°C (TJ)
FQI6N60CTU

FQI6N60CTU

MOSFET N-CH 600V 5.5A I2PAK

onsemi

9,567 -
FQI6N60CTU

数据表

QFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 2Ohm @ 2.75A, 10V Through Hole 4V @ 250µA 20 nC @ 10 V 600 V ±30V 810 pF @ 25 V - - TO-262 (I2PAK) - 125W (Tc) -55°C ~ 150°C (TJ)
SIHF9540S-GE3

SIHF9540S-GE3

MOSFET P-CH 100V 19A D2PAK

Vishay Siliconix

2,768 -
SIHF9540S-GE3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active P-Channel MOSFET (Metal Oxide) 19A (Tc) 10V 200mOhm @ 11A, 10V Surface Mount 4V @ 250µA 61 nC @ 10 V 100 V ±20V 1400 pF @ 25 V - - TO-263 (D2PAK) - 150W (Tc) -55°C ~ 175°C (TJ)
IRFR3303TRL

IRFR3303TRL

MOSFET N-CH 30V 33A DPAK

Infineon Technologies

7,139 -
IRFR3303TRL

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 33A (Tc) 10V 31mOhm @ 18A, 10V Surface Mount 4V @ 250µA 29 nC @ 10 V 30 V ±20V 750 pF @ 25 V - - TO-252AA (DPAK) - 57W (Tc) -55°C ~ 150°C (TJ)
FQPF4N90CT

FQPF4N90CT

MOSFET N-CH 900V 4A TO220F

onsemi

9,392 -
FQPF4N90CT

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 4.2Ohm @ 2A, 10V Through Hole 5V @ 250µA 22 nC @ 10 V 900 V ±30V 960 pF @ 25 V - - TO-220F-3 - 47W (Tc) -55°C ~ 150°C (TJ)
FQAF22P10

FQAF22P10

MOSFET P-CH 100V 16.6A TO3PF

onsemi

7,545 -
FQAF22P10

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete P-Channel MOSFET (Metal Oxide) 16.6A (Tc) 10V 125mOhm @ 8.3A, 10V Through Hole 4V @ 250µA 50 nC @ 10 V 100 V ±30V 1500 pF @ 25 V - - TO-3PF - 70W (Tc) -55°C ~ 175°C (TJ)
SI5853DC-T1-E3

SI5853DC-T1-E3

MOSFET P-CH 20V 2.7A 1206-8

Vishay Siliconix

7,549 -
SI5853DC-T1-E3

数据表

LITTLE FOOT® 8-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.7A (Ta) 1.8V, 4.5V 110mOhm @ 2.7A, 4.5V Surface Mount 1V @ 250µA 7.7 nC @ 4.5 V 20 V ±8V - - Schottky Diode (Isolated) 1206-8 ChipFET™ - 1.1W (Ta) -55°C ~ 150°C (TJ)
SI6473DQ-T1-E3

SI6473DQ-T1-E3

MOSFET P-CH 20V 6.2A 8TSSOP

Vishay Siliconix

5,111 -
SI6473DQ-T1-E3

数据表

TrenchFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6.2A (Ta) 1.8V, 4.5V 12.5mOhm @ 9.5A, 4.5V Surface Mount 450mV @ 250µA (Min) 70 nC @ 5 V 20 V ±8V - - - 8-TSSOP - 1.08W (Ta) -55°C ~ 150°C (TJ)
SI6473DQ-T1-GE3

SI6473DQ-T1-GE3

MOSFET P-CH 20V 6.2A 8TSSOP

Vishay Siliconix

8,908 -
SI6473DQ-T1-GE3

数据表

TrenchFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 6.2A (Ta) 1.8V, 4.5V 12.5mOhm @ 9.5A, 4.5V Surface Mount 450mV @ 250µA (Min) 70 nC @ 5 V 20 V ±8V - - - 8-TSSOP - 1.08W (Ta) -55°C ~ 150°C (TJ)
DMJ70H1D0SV3

DMJ70H1D0SV3

MOSFET N-CHANNEL 700V 6A TO251

Diodes Incorporated

3,209 -
DMJ70H1D0SV3

数据表

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 1Ohm @ 1.5A, 10V Through Hole 4V @ 250µA 12.8 nC @ 10 V 700 V ±30V 420 pF @ 50 V - - TO-251 (Type TH3) - 104W (Tc) -55°C ~ 150°C (TJ)
SPA02N80C3XKSA1

SPA02N80C3XKSA1

MOSFET N-CH 800V 2A TO220-FP

Infineon Technologies

3,318 -
SPA02N80C3XKSA1

数据表

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 2.7Ohm @ 1.2A, 10V Through Hole 3.9V @ 120µA 16 nC @ 10 V 800 V ±20V 290 pF @ 100 V - - PG-TO220-3-31 - 30.5W (Tc) -55°C ~ 150°C (TJ)
DMT15H017LPSW-13

DMT15H017LPSW-13

MOSFET BVDSS: 101V~250V POWERDI5

Diodes Incorporated

4,967 -
DMT15H017LPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.4A (Ta), 58A (Tc) 4.5V, 10V 17.5mOhm @ 20A, 10V Surface Mount, Wettable Flank 2.6V @ 250µA 50 nC @ 10 V 150 V ±20V 3369 pF @ 75 V - - PowerDI5060-8 (Type UX) - 1.3W (Ta), 89W (Tc) -55°C ~ 150°C (TJ)
SPD08N50C3BTMA1

SPD08N50C3BTMA1

MOSFET N-CH 560V 7.6A TO252-3

Infineon Technologies

4,881 -
SPD08N50C3BTMA1

数据表

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V Surface Mount 3.9V @ 350µA 32 nC @ 10 V 560 V ±20V 750 pF @ 25 V - - PG-TO252-3-11 - 83W (Tc) -55°C ~ 150°C (TJ)
IRF9520NLPBF

IRF9520NLPBF

MOSFET P-CH 100V 6.8A TO262

Infineon Technologies

7,503 -
IRF9520NLPBF

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 6.8A (Tc) 10V 480mOhm @ 4A, 10V Through Hole 4V @ 250µA 27 nC @ 10 V 100 V ±20V 350 pF @ 25 V - - TO-262 - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ)
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