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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPA50R650CE

IPA50R650CE

MOSFET N-CH 500V 6.1A TO220-FP

Infineon Technologies

4,872 -
IPA50R650CE

数据表

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 6.1A (Tc) 13V 650mOhm @ 1.8A, 13V Through Hole 3.5V @ 150µA 15 nC @ 10 V 500 V ±20V 342 pF @ 100 V - - PG-TO220-FP - 27.2W (Tc) -40°C ~ 150°C (TJ)
DI170N03PQ

DI170N03PQ

MOSFET POWERQFN 5X6 N 30V

Diotec Semiconductor

7,851 -
DI170N03PQ

数据表

- 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 170A (Tc) 4.5V, 10V 1.2mOhm @ 20A, 10V Surface Mount 2V @ 250µA 90 nC @ 10 V 30 V ±20V 5300 pF @ 15 V - - 8-QFN (5x6) - 135W (Tc) -55°C ~ 150°C (TJ)
FDD2612

FDD2612

MOSFET N-CH 200V 4.9A TO252

onsemi

6,642 -
FDD2612

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.9A (Ta) 10V 720mOhm @ 1.5A, 10V Surface Mount 4.5V @ 250µA 11 nC @ 10 V 200 V ±20V 234 pF @ 100 V - - TO-252AA - 42W (Ta) -55°C ~ 175°C (TJ)
SI4413CDY-T1-GE3

SI4413CDY-T1-GE3

MOSFET P-CH 30V 8-SOIC

Vishay Siliconix

7,656 -
SI4413CDY-T1-GE3

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) - - - Surface Mount - - 30 V - - - - 8-SOIC - - -
TSM340N06CH

TSM340N06CH

60V, 25A, SINGLE N-CHANNEL POWER

Taiwan Semiconductor Corporation

8,356 -
TSM340N06CH

数据表

- TO-251-3 Stub Leads, IPAK Tube Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 34mOhm @ 15A, 10V Through Hole 2.5V @ 250µA 16.6 nC @ 10 V 60 V ±20V 1180 pF @ 30 V - - TO-251S (IPAK SL) - 40W (Tc) 150°C (TJ)
DMPH33M8SPSW-13

DMPH33M8SPSW-13

MOSFET BVDSS: 25V~30V PowerDI506

Diodes Incorporated

8,811 -
DMPH33M8SPSW-13

数据表

- 8-PowerTDFN Bulk Active P-Channel MOSFET (Metal Oxide) 100A (Tc) 6V, 10V 3.8mOhm @ 20A, 10V Surface Mount 3V @ 250µA 127 nC @ 10 V 30 V ±20V 3775 pF @ 15 V - - PowerDI5060-8 (Type Q) - 1.7W (Ta) -55°C ~ 175°C (TJ)
DMTH4004LPSWQ-13

DMTH4004LPSWQ-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

8,987 -
DMTH4004LPSWQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 2.5mOhm @ 50A, 10V Surface Mount, Wettable Flank 3V @ 250µA 69.6 nC @ 10 V 40 V ±20V 5220 pF @ 20 V AEC-Q101 - PowerDI5060-8 (Type UX) Automotive 2.83W (Ta), 125W (Tc) -55°C ~ 175°C (TJ)
IRF540NLPBF

IRF540NLPBF

MOSFET N-CH 100V 33A TO262

Infineon Technologies

8,504 -
IRF540NLPBF

数据表

HEXFET® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 33A (Tc) 10V 44mOhm @ 16A, 10V Through Hole 4V @ 250µA 71 nC @ 10 V 100 V ±20V 1960 pF @ 25 V - - TO-262 - 130W (Tc) -55°C ~ 175°C (TJ)
DMN95H8D5HCT

DMN95H8D5HCT

MOSFET N-CH 950V 2.5A TO220AB

Diodes Incorporated

5,560 -
DMN95H8D5HCT

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 7Ohm @ 1A, 10V Through Hole 5V @ 250µA 7.9 nC @ 10 V 950 V ±30V 470 pF @ 25 V - - TO-220AB (Type TH) - 125W (Tc) -55°C ~ 150°C (TJ)
FQAF33N10L

FQAF33N10L

MOSFET N-CH 100V 25.8A TO3PF

onsemi

8,289 -
FQAF33N10L

数据表

QFET® TO-3P-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 25.8A (Tc) 5V, 10V 52mOhm @ 12.9A, 10V Through Hole 2V @ 250µA 40 nC @ 5 V 100 V ±20V 1630 pF @ 25 V - - TO-3PF - 83W (Tc) -55°C ~ 175°C (TJ)
IRF7807D2TR

IRF7807D2TR

MOSFET N-CH 30V 8.3A 8SO

Infineon Technologies

6,765 -
IRF7807D2TR

数据表

FETKY™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8.3A (Ta) 4.5V 25mOhm @ 7A, 4.5V Surface Mount 1V @ 250µA 17 nC @ 5 V 30 V ±12V - - Schottky Diode (Isolated) 8-SO - 2.5W (Tc) -
DMT15H067SSS-13

DMT15H067SSS-13

MOSFET N-CH 150V 4.5A/13A 8SO

Diodes Incorporated

1,885 -
DMT15H067SSS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4.5A (Ta), 13A (Tc) 10V 67mOhm @ 4.1A, 10V Surface Mount 4V @ 250µA 6.4 nC @ 10 V 150 V ±20V 425 pF @ 75 V - - 8-SO - 1.3W (Ta) -55°C ~ 150°C (TJ)
SI4420BDY-T1-GE3

SI4420BDY-T1-GE3

MOSFET N-CH 30V 9.5A 8SO

Vishay Siliconix

1,757 -
SI4420BDY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.5A (Ta) 4.5V, 10V 8.5mOhm @ 13.5A, 10V Surface Mount 3V @ 250µA 50 nC @ 10 V 30 V ±20V - - - 8-SOIC - 1.4W (Ta) -55°C ~ 150°C (TJ)
FDMC7678-L701

FDMC7678-L701

PT8 N 30/20V MLP3.3X3.3

onsemi

5,128 -
FDMC7678-L701

数据表

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17.5A (Ta), 19.5A (Tc) 4.5V, 10V 5.3mOhm @ 17.5A, 10V Surface Mount 3V @ 250µA 39 nC @ 10 V 30 V ±20V 2410 pF @ 15 V - - 8-MLP (3.3x3.3) - 2.3W (Ta), 31W (Tc) -55°C ~ 150°C (TJ)
TSM052NB03CR RLG

TSM052NB03CR RLG

MOSFET N-CH 30V 17A/90A 8PDFN

Taiwan Semiconductor Corporation

4,949 -
TSM052NB03CR RLG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Ta), 90A (Tc) 4.5V, 10V 5.2mOhm @ 17A, 10V Surface Mount 2.5V @ 250µA 41 nC @ 10 V 30 V ±20V 2294 pF @ 15 V - - 8-PDFN (5x6) - 3.1W (Ta), 83W (Tc) -55°C ~ 175°C (TJ)
ISK036N03LM5AUSA1

ISK036N03LM5AUSA1

TRENCH <= 40V

Infineon Technologies

2,585 -
ISK036N03LM5AUSA1

数据表

OptiMOS™ 5 6-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16.5A (Ta), 81A (Tc) 4.5V, 10V 3.6mOhm @ 20A, 10V Surface Mount 2V @ 250µA 21.5 nC @ 10 V 30 V ±16V 1400 pF @ 15 V - - PG-VSON-6-1 - 2.1W (Ta), 39W (Tc) -55°C ~ 150°C (TJ)
IAUCN04S7L009ATMA1

IAUCN04S7L009ATMA1

MOSFET_(20V 40V)

Infineon Technologies

828 -
IAUCN04S7L009ATMA1

数据表

OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 275A (Tj) 4.5V, 10V 0.91mOhm @ 88A, 10V Surface Mount 1.8V @ 60µA 85 nC @ 10 V 40 V ±16V 5704 pF @ 20 V AEC-Q101 - PG-TDSON-8-34 Automotive 129W (Tc) -55°C ~ 175°C (TJ)
PJQ4443P-AU_R2_000A1

PJQ4443P-AU_R2_000A1

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

759 -
PJQ4443P-AU_R2_000A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8.8A (Ta), 46A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 23 nC @ 4.5 V 40 V ±20V 2767 pF @ 25 V AEC-Q101 - DFN3333-8 Automotive 2.1W (Ta), 59.5W (Tc) -55°C ~ 150°C (TJ)
ZXMN6A08GQTA

ZXMN6A08GQTA

MOSFET N-CH 60V 3.8A SOT223

Diodes Incorporated

261 -
ZXMN6A08GQTA

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.8A (Ta) 4.5V, 10V 80mOhm @ 4.8A, 10V Surface Mount 1V @ 250µA 5.8 nC @ 10 V 60 V ±20V 459 pF @ 40 V AEC-Q101 - SOT-223-3 Automotive 2W (Ta) -55°C ~ 150°C (TJ)
IAUCN04S7N009ATMA1

IAUCN04S7N009ATMA1

MOSFET_(20V 40V)

Infineon Technologies

236 -
IAUCN04S7N009ATMA1

数据表

OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 175A 10V - Surface Mount - - 40 V - - AEC-Q101 - PG-TDSON-8-34 Automotive - -55°C ~ 175°C
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