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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
STF5N52U

STF5N52U

MOSFET N-CH 525V 4.4A TO220FP

STMicroelectronics

3,560 -
STF5N52U

数据表

UltraFASTmesh™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.4A (Tc) 10V 1.5Ohm @ 2.2A, 10V Through Hole 4.5V @ 50µA 16.9 nC @ 10 V 525 V ±30V 529 pF @ 25 V - - TO-220FP - 25W (Tc) -55°C ~ 150°C (TJ)
DI100N04PQ-AQ

DI100N04PQ-AQ

MOSFET PWRQFN 5X6 40V 0.0021OHM

Diotec Semiconductor

5,000 -
DI100N04PQ-AQ

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 2.1mOhm @ 50A, 10V Surface Mount 2.4V @ 250µA 64 nC @ 10 V 40 V ±20V 4766 pF @ 20 V AEC-Q101 - 8-QFN (5x6) Automotive 83W (Tc) -55°C ~ 150°C (TJ)
IPZ40N04S5L3R6ATMA1

IPZ40N04S5L3R6ATMA1

MOSFET_(20V 40V) PG-TSDSON-8

Infineon Technologies

4,328 -
IPZ40N04S5L3R6ATMA1

数据表

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 87A (Tj) 4.5V, 10V 3.6mOhm @ 20A, 10V Surface Mount 2V @ 21µA 32.8 nC @ 10 V 40 V ±16V 1966 pF @ 25 V AEC-Q101 - PG-TSDSON-8-33 Automotive 58W (Tc) -55°C ~ 175°C (TJ)
FDPF18N20FT-G

FDPF18N20FT-G

MOSFET N-CH 200V 18A TO220F

onsemi

5,390 -
FDPF18N20FT-G

数据表

UniFET™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 140mOhm @ 9A, 10V Through Hole 5V @ 250µA 26 nC @ 10 V 200 V ±30V 1180 pF @ 25 V - - TO-220F-3 - 35W (Tc) -55°C ~ 150°C (TJ)
IPZ40N04S53R9ATMA1

IPZ40N04S53R9ATMA1

MOSFET_(20V 40V) PG-TSDSON-8

Infineon Technologies

4,225 -
IPZ40N04S53R9ATMA1

数据表

OptiMOS™ 5 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 89A (Tj) 7V, 10V 3.9mOhm @ 20A, 10V Surface Mount 3.4V @ 21µA 25 nC @ 10 V 40 V ±20V 1737 pF @ 25 V AEC-Q101 - PG-TSDSON-8-33 Automotive 58W (Tc) -55°C ~ 175°C (TJ)
HRFZ44N

HRFZ44N

MOSFET N-CH 55V 49A TO220-3

onsemi

6,271 -
HRFZ44N

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 49A (Tc) 10V 22mOhm @ 25A, 10V Through Hole 4V @ 250µA 75 nC @ 20 V 55 V ±20V 1060 pF @ 25 V - - TO-220-3 - 120W (Tc) -55°C ~ 175°C (TJ)
IRFU9024N

IRFU9024N

MOSFET P-CH 55V 11A IPAK

Infineon Technologies

5,188 -
IRFU9024N

数据表

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete P-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 175mOhm @ 6.6A, 10V Through Hole 4V @ 250µA 19 nC @ 10 V 55 V ±20V 350 pF @ 25 V - - IPAK (TO-251AA) - 38W (Tc) -55°C ~ 150°C (TJ)
NVTYS010N04CTWG

NVTYS010N04CTWG

T6 40V N-CH SL IN LFPAK33

onsemi

3,000 -
NVTYS010N04CTWG

数据表

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Ta), 38A (Tc) 10V 12mOhm @ 10A, 10V Surface Mount 3.5V @ 20µA 7 nC @ 10 V 40 V ±20V 492 pF @ 25 V AEC-Q101 - 8-LFPAK Automotive 3.1W (Ta), 32W (Tc) -55°C ~ 175°C (TJ)
STD90N03L

STD90N03L

MOSFET N-CH 30V 80A DPAK

STMicroelectronics

11 -
STD90N03L

数据表

STripFET™ III TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 5V, 10V 5.7mOhm @ 40A, 10V Surface Mount 1V @ 250µA 32 nC @ 5 V 30 V ±20V 2805 pF @ 25 V - - DPAK - 95W (Tc) -55°C ~ 175°C (TJ)
TPN6R303NC,LQ

TPN6R303NC,LQ

MOSFET N CH 30V 20A 8TSON-ADV

Toshiba Semiconductor and Storage

2,980 -
TPN6R303NC,LQ

数据表

U-MOSVIII 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta) 4.5V, 10V 6.3mOhm @ 10A, 10V Surface Mount 2.3V @ 200µA 24 nC @ 10 V 30 V ±20V 1370 pF @ 15 V - - 8-TSON Advance (3.1x3.1) - 700mW (Ta), 19W (Tc) 150°C (TJ)
IXTP1R6N50P

IXTP1R6N50P

MOSFET N-CH 500V 1.6A TO220AB

IXYS

5,124 -
IXTP1R6N50P

数据表

Polar TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.6A (Tc) 10V 6.5Ohm @ 500mA, 10V Through Hole 5.5V @ 25µA 3.9 nC @ 10 V 500 V ±30V 140 pF @ 25 V - - TO-220-3 - 43W (Tc) -55°C ~ 150°C (TJ)
DMP4025LK3Q-13

DMP4025LK3Q-13

MOSFET BVDSS: 31V~40V TO252 T&R

Diodes Incorporated

2,027 -
DMP4025LK3Q-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6.7A (Ta) 4.5V, 10V 25mOhm @ 3A, 10V Surface Mount 1.8V @ 250µA 33.7 nC @ 10 V 40 V ±20V 1643 pF @ 20 V AEC-Q101 - TO-252 (DPAK) Automotive 1.7W (Ta) -55°C ~ 150°C (TJ)
NTMFS5C670NT1G

NTMFS5C670NT1G

MOSFET N-CH 60V 17A/71A 5DFN

onsemi

1,500 -
NTMFS5C670NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Ta), 71A (Tc) 10V 7mOhm @ 11A, 10V Surface Mount 4V @ 53µA 14.4 nC @ 10 V 60 V ±20V 1035 pF @ 30 V - - 5-DFN (5x6) (8-SOFL) - 3.6W (Ta), 61W (Tc) -55°C ~ 175°C (TJ)
PSMN3R5-25MLDX

PSMN3R5-25MLDX

MOSFET N-CH 25V 70A LFPAK33

Nexperia USA Inc.

1,478 -
PSMN3R5-25MLDX

数据表

- SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 4.5V, 10V 3.72mOhm @ 25A, 10V Surface Mount 2.2V @ 1mA 18.9 nC @ 10 V 25 V ±20V 1334 pF @ 12 V - Schottky Diode (Body) LFPAK33 - 65W (Tc) -55°C ~ 175°C (TJ)
SISH103DN-T1-GE3

SISH103DN-T1-GE3

P-CHANNEL 30 V (D-S) MOSFET POWE

Vishay Siliconix

11,350 -
SISH103DN-T1-GE3

数据表

TrenchFET® PowerPAK® 1212-8SH Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 16A (Ta), 54A (Tc) 4.5V, 10V 155mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 72 nC @ 10 V 30 V ±25V 2540 pF @ 15 V - - PowerPAK® 1212-8SH - 3.67W (Ta), 41.6W (Tc) -55°C ~ 150°C (TJ)
MCG40N10YHE3-TP

MCG40N10YHE3-TP

N-CHANNEL MOSFET, DFN3333

Micro Commercial Co

9,862 -
MCG40N10YHE3-TP

数据表

- 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 4.5V, 10V 18.5mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 16 nC @ 10 V 100 V ±20V 1220 pF @ 10 V AEC-Q101 - DFN3333 Automotive 43W (Tj) -55°C ~ 150°C (TJ)
TSM2NB60CP ROG

TSM2NB60CP ROG

MOSFET N-CHANNEL 600V 2A TO252

Taiwan Semiconductor Corporation

4,917 -
TSM2NB60CP ROG

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 4.4Ohm @ 1A, 10V Surface Mount 4.5V @ 250µA 9.4 nC @ 10 V 600 V ±30V 249 pF @ 25 V - - TO-252 (DPAK) - 44W (Tc) -55°C ~ 150°C (TJ)
IXTP1R4N60P

IXTP1R4N60P

MOSFET N-CH 600V 1.4A TO220AB

IXYS

8,058 -
IXTP1R4N60P

数据表

PolarHV™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.4A (Tc) 10V 9Ohm @ 700mA, 10V Through Hole 5.5V @ 25µA 5.2 nC @ 10 V 600 V ±30V 140 pF @ 25 V - - TO-220-3 - 50W (Tc) -55°C ~ 150°C (TJ)
DI067P06PQ

DI067P06PQ

MOSFET POWERQFN 5X6 P -60V

Diotec Semiconductor

6,920 -
DI067P06PQ

数据表

- 8-PowerTDFN Bulk Active P-Channel MOSFET (Metal Oxide) 67A (Tc) 4.5V, 10V 13.5mOhm @ 20A, 10V Surface Mount 2.6V @ 250µA 62.1 nC @ 10 V 60 V ±20V 5505 pF @ 20 V - - 8-QFN (5x6) - 110W (Tc) -55°C ~ 150°C (TJ)
R6002JND4TL1

R6002JND4TL1

600V 1A SOT-223-3, PRESTOMOS WIT

Rohm Semiconductor

3,972 -
R6002JND4TL1

数据表

- TO-261-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1A (Tc) 15V 3.25Ohm @ 1A, 15V Surface Mount 7V @ 100µA 7 nC @ 15 V 600 V ±30V 130 pF @ 100 V - - SOT-223-3 - 6.6W (Tc) 150°C (TJ)
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