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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6007KNJTL

R6007KNJTL

MOSFET N-CH 600V 7A LPTS

Rohm Semiconductor

14 -
R6007KNJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 620mOhm @ 2.4A, 10V Surface Mount 5V @ 1mA 14.5 nC @ 10 V 600 V ±20V 470 pF @ 25 V - - LPTS - 78W (Tc) -55°C ~ 150°C (TJ)
R6007ENJTL

R6007ENJTL

MOSFET N-CH 600V 7A LPTS

Rohm Semiconductor

7,733 -
R6007ENJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 620mOhm @ 2.4A, 10V Surface Mount 4V @ 1mA 20 nC @ 10 V 600 V ±20V 390 pF @ 25 V - - LPTS - 40W (Tc) 150°C (TJ)
R6009KNJTL

R6009KNJTL

MOSFET N-CH 600V 9A LPTS

Rohm Semiconductor

9,906 -
R6009KNJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 535mOhm @ 2.8A, 10V Surface Mount 5V @ 1mA 16.5 nC @ 10 V 600 V ±20V 540 pF @ 25 V - - LPTS - 94W (Tc) -55°C ~ 150°C (TJ)
R6011KNJTL

R6011KNJTL

MOSFET N-CH 600V 11A LPTS

Rohm Semiconductor

7,268 -
R6011KNJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 390mOhm @ 3.8A, 10V Surface Mount 5V @ 1mA 22 nC @ 10 V 600 V ±20V 740 pF @ 25 V - - LPTS - 124W (Tc) -55°C ~ 150°C (TJ)
R6504ENJTL

R6504ENJTL

MOSFET N-CH 650V 4A LPTS

Rohm Semiconductor

9,084 -
R6504ENJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 4A (Tc) 10V 1.05Ohm @ 1.5A, 10V Surface Mount 4V @ 130µA 15 nC @ 10 V 650 V ±20V 220 pF @ 25 V - - LPTS - 58W (Tc) 150°C (TJ)
R6006JND3TL1

R6006JND3TL1

MOSFET N-CH 600V 6A TO252

Rohm Semiconductor

2,477 -
R6006JND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 15V 936mOhm @ 3A, 15V Surface Mount 7V @ 800µA 15.5 nC @ 15 V 600 V ±30V 410 pF @ 100 V - - TO-252 - 86W (Tc) 150°C (TJ)
RS1L180GNTB

RS1L180GNTB

MOSFET N-CH 60V 18A/68A 8HSOP

Rohm Semiconductor

6,162 -
RS1L180GNTB

数据表

- 8-PowerTDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 18A (Ta), 68A (Tc) 4.5V, 10V 5.6mOhm @ 18A, 10V Surface Mount 2.5V @ 100µA 63 nC @ 10 V 60 V ±20V 3230 pF @ 30 V - - 8-HSOP - 3W (Ta) 150°C (TJ)
R6020KNZC17

R6020KNZC17

MOSFET N-CH 600V 20A TO3PF

Rohm Semiconductor

17 -
R6020KNZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 196mOhm @ 9.5A, 10V Through Hole 5V @ 1mA 40 nC @ 10 V 600 V ±20V 1550 pF @ 25 V - - TO-3PF - 68W (Tc) 150°C (TJ)
R6009ENJTL

R6009ENJTL

MOSFET N-CH 600V 9A LPTS

Rohm Semiconductor

8,773 -
R6009ENJTL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 535mOhm @ 2.8A, 10V Surface Mount 4V @ 1mA 23 nC @ 10 V 600 V ±20V 430 pF @ 25 V - - LPTS - 40W (Tc) 150°C (TJ)
RCJ300N20TL

RCJ300N20TL

MOSFET N-CH 200V 30A LPTS

Rohm Semiconductor

2,284 -
RCJ300N20TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 10V 80mOhm @ 15A, 10V Surface Mount 5V @ 1mA 60 nC @ 10 V 200 V ±30V 3200 pF @ 25 V - - LPTS - 1.56W (Ta), 40W (Tc) 150°C (TJ)
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