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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
BSM300C12P3E301

BSM300C12P3E301

SICFET N-CH 1200V 300A MODULE

Rohm Semiconductor

5,515 -
BSM300C12P3E301

数据表

- Module Bulk Active N-Channel SiCFET (Silicon Carbide) 300A (Tc) - - - 5.6V @ 80mA - 1200 V +22V, -4V 1500 pF @ 10 V - - Module - 1360W (Tc) -40°C ~ 150°C (TJ)
RQ3N060ATTB1

RQ3N060ATTB1

PCH -80V -18A, HSMT8, POWER MOSF

Rohm Semiconductor

5,951 -
RQ3N060ATTB1

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
RS6E120BGTB1

RS6E120BGTB1

30V 270A HSOP8, POWER MOSFET : R

Rohm Semiconductor

7,370 -
RS6E120BGTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 1.1mOhm @ 90A, 10V Surface Mount 2.5V @ 1mA 75 nC @ 10 V 30 V ±20V 5750 pF @ 15 V - - 8-HSOP - 3W (Ta), 138W (Tc) 150°C (TJ)
R8002ANX

R8002ANX

MOSFET N-CH 800V 2A TO220FM

Rohm Semiconductor

6,672 -
R8002ANX

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 4.3Ohm @ 1A, 10V Through Hole 5V @ 1mA 12.7 nC @ 10 V 800 V ±30V 210 pF @ 25 V - - TO-220FM - 35W (Tc) 150°C (TJ)
R8008ANX

R8008ANX

MOSFET N-CH 800V 8A TO220FM

Rohm Semiconductor

2,182 -
R8008ANX

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 8A (Ta) 10V 1.03Ohm @ 4A, 10V Through Hole 5V @ 1mA 39 nC @ 10 V 800 V ±30V 1080 pF @ 25 V - - TO-220FM - 50W (Tc) 150°C (TJ)
RD3P07BBHTL1

RD3P07BBHTL1

NCH 100V 70A, TO-252, POWER MOSF

Rohm Semiconductor

7,469 -
RD3P07BBHTL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 6V, 10V 7.7mOhm @ 70A, 10V Surface Mount 4V @ 1mA 38 nC @ 10 V 100 V ±20V 2410 pF @ 50 V - - TO-252 - 89W (Tc) 150°C (TJ)
RMW280N03TB

RMW280N03TB

MOSFET N-CH 30V 28A 8PSOP

Rohm Semiconductor

4,368 -
RMW280N03TB

数据表

- 8-SMD, Flat Lead Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 28A (Ta) 4.5V, 10V 2.8mOhm @ 28A, 10V Surface Mount 2.5V @ 1mA 53 nC @ 10 V 30 V ±20V 3130 pF @ 15 V - - 8-PSOP - 3W (Ta) 150°C (TJ)
R5009FNX

R5009FNX

MOSFET N-CH 500V 9A TO220FM

Rohm Semiconductor

5,311 -
R5009FNX

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 840mOhm @ 4.5A, 10V Through Hole 4V @ 1mA 18 nC @ 10 V 500 V ±30V 630 pF @ 25 V - - TO-220FM - 50W (Tc) 150°C (TJ)
R6012FNX

R6012FNX

MOSFET N-CH 600V 12A TO220FM

Rohm Semiconductor

8,634 -
R6012FNX

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 510mOhm @ 6A, 10V Through Hole 5V @ 1mA 35 nC @ 10 V 600 V ±30V 1300 pF @ 25 V - - TO-220FM - 50W (Tc) 150°C (TJ)
R4008ANDTL

R4008ANDTL

MOSFET N-CH 400V 8A CPT3

Rohm Semiconductor

9,743 -
R4008ANDTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 8A (Ta) 10V 950mOhm @ 4A, 10V Surface Mount 4.5V @ 1mA 15 nC @ 10 V 400 V ±30V 500 pF @ 25 V - - CPT3 - 20W (Tc) 150°C (TJ)
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