ROHM Semiconductor|场效应晶体管（FETs）、MOSFETs - 页 92

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
R6011ENJTL MOSFET N-CH 600V 11A LPTS Rohm Semiconductor	9,933	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11A (Tc)	10V	390mOhm @ 3.8A, 10V	Surface Mount	4V @ 1mA	32 nC @ 10 V	600 V	±20V	670 pF @ 25 V	-	-	LPTS	-	40W (Tc)	150°C (TJ)
RSJ400N10TL MOSFET N-CH 100V 40A LPTS Rohm Semiconductor	3	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	40A (Tc)	4V, 10V	27mOhm @ 40A, 10V	Surface Mount	2.5V @ 1mA	90 nC @ 10 V	100 V	±20V	3600 pF @ 25 V	-	-	LPTS	-	1.35W (Ta), 50W (Tc)	150°C (TJ)
R6015ENJTL MOSFET N-CH 600V 15A LPTS Rohm Semiconductor	4	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	10V	290mOhm @ 6.5A, 10V	Surface Mount	4V @ 1mA	40 nC @ 10 V	600 V	±20V	910 pF @ 25 V	-	-	LPTS	-	40W (Tc)	150°C (TJ)
R6024KNJTL MOSFET N-CHANNEL 600V 24A LPTS Rohm Semiconductor	5,885	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	165mOhm @ 11.3A, 10V	Surface Mount	5V @ 1mA	45 nC @ 10 V	600 V	±20V	2000 pF @ 25 V	-	-	LPTS	-	245W (Tc)	-55°C ~ 150°C (TJ)
R6012JNXC7G MOSFET N-CH 600V 12A TO220FM Rohm Semiconductor	8,953	-	询价单	数据表	-	TO-220-3 Full Pack	Tube	Active	N-Channel	MOSFET (Metal Oxide)	12A (Tc)	15V	390mOhm @ 6A, 15V	Through Hole	7V @ 2.5mA	28 nC @ 15 V	600 V	±30V	900 pF @ 100 V	-	-	TO-220FM	-	60W (Tc)	150°C (TJ)
R6524KNJTL MOSFET N-CH 650V 24A LPTS Rohm Semiconductor	4,061	-	询价单	数据表	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	24A (Tc)	10V	185mOhm @ 11.3A, 10V	Surface Mount	5V @ 750µA	45 nC @ 10 V	650 V	±20V	1850 pF @ 25 V	-	-	LPTS	-	245W (Tc)	150°C (TJ)
R6047KNZ4C13 MOSFET N-CH 600V 47A TO247 Rohm Semiconductor	8,810	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	47A (Tc)	10V	72mOhm @ 25.8A, 10V	Through Hole	5V @ 1mA	100 nC @ 10 V	600 V	±20V	4300 pF @ 25 V	-	-	TO-247	-	481W (Tc)	150°C (TJ)
R6547KNZ4C13 MOSFET N-CH 650V 47A TO247 Rohm Semiconductor	7,253	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	47A (Tc)	10V	80mOhm @ 25.8A, 10V	Through Hole	5V @ 1.72mA	100 nC @ 10 V	650 V	±20V	4100 pF @ 25 V	-	-	TO-247	-	480W (Tc)	150°C (TJ)
R6076KNZ4C13 MOSFET N-CH 600V 76A TO247 Rohm Semiconductor	7,442	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	76A (Tc)	10V	42mOhm @ 44.4A, 10V	Through Hole	5V @ 1mA	165 nC @ 10 V	600 V	±20V	7400 pF @ 25 V	-	-	TO-247	-	735W (Tc)	150°C (TJ)
SCT3105KLGC11 SICFET N-CH 1200V 24A TO247N Rohm Semiconductor	5,672	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	SiCFET (Silicon Carbide)	24A (Tc)	18V	137mOhm @ 7.6A, 18V	Through Hole	5.6V @ 3.81mA	51 nC @ 18 V	1200 V	+22V, -4V	574 pF @ 800 V	-	-	TO-247N	-	134W	175°C (TJ)

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