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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6009JNXC7G

R6009JNXC7G

MOSFET N-CH 600V 9A TO220FM

Rohm Semiconductor

1,889 -
R6009JNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 9A (Tc) 15V 585mOhm @ 4.5A, 15V Through Hole 7V @ 1.38mA 22 nC @ 15 V 600 V ±30V 645 pF @ 100 V - - TO-220FM - 53W (Tc) -55°C ~ 150°C (TJ)
RD3G500GNTL

RD3G500GNTL

MOSFET N-CH 40V 50A TO252

Rohm Semiconductor

2,268 -
RD3G500GNTL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 4.9mOhm @ 50A, 10V Surface Mount 2.5V @ 1mA 31 nC @ 10 V 40 V ±20V 22800 pF @ 20 V - - TO-252 - 35W (Tc) 150°C (TJ)
R8003KNXC7G

R8003KNXC7G

800V 3A, TO-220FM, HIGH-SPEED SW

Rohm Semiconductor

457 -
R8003KNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 3A (Ta) 10V 1.8Ohm @ 1.5A, 10V Through Hole 4.5V @ 2mA 11.5 nC @ 10 V 800 V ±20V 300 pF @ 100 V - - TO-220FM - 36W (Tc) 150°C (TJ)
RQ3E130MNTB1

RQ3E130MNTB1

MOSFET N-CH 30V 13A HSMT8

Rohm Semiconductor

1,969 -
RQ3E130MNTB1

数据表

- 8-PowerVDFN Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 13A (Ta) 4.5V, 10V 8.1mOhm @ 13A, 10V Surface Mount 2.5V @ 1mA 14 nC @ 10 V 30 V ±20V 840 pF @ 15 V - - 8-HSMT (3.2x3) - 2W (Ta) 150°C (TJ)
RRS090P03HZGTB

RRS090P03HZGTB

AUTOMOTIVE PCH -30V -9A POWER MO

Rohm Semiconductor

1,854 -
RRS090P03HZGTB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 9A (Ta) 4V, 10V 15.4mOhm @ 9A, 10V Surface Mount 2.5V @ 1mA 30 nC @ 5 V 30 V ±20V 3000 pF @ 10 V AEC-Q101 - 8-SOP Automotive 2W (Ta) 150°C (TJ)
R6003KND3TL1

R6003KND3TL1

MOSFET N-CH 600V 3A TO252

Rohm Semiconductor

102 -
R6003KND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 1.5Ohm @ 1A, 10V Surface Mount 5.5V @ 1mA 8 nC @ 10 V 600 V ±20V 185 pF @ 25 V - - TO-252 - 44W (Tc) 150°C (TJ)
RMW180N03TB

RMW180N03TB

MOSFET N-CH 30V 18A 8PSOP

Rohm Semiconductor

2,415 -
RMW180N03TB

数据表

* - Cut Tape (CT) Obsolete - - - - - - - - - - - - - - - - -
R6507KND3TL1

R6507KND3TL1

HIGH-SPEED SWITCHING, NCH 650V 7

Rohm Semiconductor

2,463 -
R6507KND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 665mOhm @ 2.4A, 10V Surface Mount 5V @ 200µA 14.5 nC @ 10 V 650 V ±20V 470 pF @ 25 V - - TO-252 - 78W (Tc) 150°C (TJ)
RS1E350BNTB

RS1E350BNTB

MOSFET N-CH 30V 35A 8HSOP

Rohm Semiconductor

810 -
RS1E350BNTB

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Ta), 80A (Tc) 4.5V, 10V 1.7mOhm @ 35A, 10V Surface Mount 2.5V @ 1mA 185 nC @ 10 V 30 V ±20V 7900 pF @ 15 V - - 8-HSOP - 3W (Ta), 35W (Tc) 150°C (TJ)
RS1P600BETB1

RS1P600BETB1

MOSFET N-CH 100V 17.5A/60A 8HSOP

Rohm Semiconductor

8,009 -
RS1P600BETB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 17.5A (Ta), 60A (Tc) 10V 9.7mOhm @ 17.5A, 10V Surface Mount 4V @ 500µA 33 nC @ 10 V 100 V ±20V 2200 pF @ 50 V - - 8-HSOP - 3W (Ta), 35W (Tc) 150°C (TJ)
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