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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
R6006KND3TL1

R6006KND3TL1

MOSFET N-CH 600V 6A TO252

Rohm Semiconductor

2,633 -
R6006KND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 830mOhm @ 3A, 10V Surface Mount 5.5V @ 1mA 12 nC @ 10 V 600 V ±20V 350 pF @ 25 V - - TO-252 - 70W (Tc) 150°C (TJ)
R6015KNX

R6015KNX

MOSFET N-CH 600V 15A TO220FM

Rohm Semiconductor

454 -
R6015KNX

数据表

- TO-220-3 Full Pack Bulk Not For New Designs N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 290mOhm @ 6.5A, 10V Through Hole 5V @ 1mA 27.5 nC @ 10 V 600 V ±20V 1050 pF @ 25 V - - TO-220FM - 60W (Tc) -55°C ~ 150°C (TJ)
R6520KNX3C16

R6520KNX3C16

650V 20A, TO-220AB, HIGH-SPEED S

Rohm Semiconductor

865 -
R6520KNX3C16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 20A (Tc) 10V 205mOhm @9.5A, 10V Through Hole 5V @ 630µA 40 nC @ 10 V 650 V ±20V 1550 pF @ 25 V - - TO-220AB - 220W (Tc) 150°C (TJ)
RSS065N03TB

RSS065N03TB

MOSFET N-CH 30V 6.5A 8SOP

Rohm Semiconductor

6,270 -
RSS065N03TB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6.5A (Ta) 4V, 10V 26mOhm @ 6.5A, 10V Surface Mount 2.5V @ 1mA 6.1 nC @ 5 V 30 V ±20V 430 pF @ 10 V - - 8-SOP - 2W (Ta) 150°C (TJ)
RCX220N25

RCX220N25

MOSFET N-CH 250V 22A TO220FM

Rohm Semiconductor

500 -
RCX220N25

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 22A (Tc) 10V 140mOhm @ 11A, 10V Through Hole 5V @ 1mA 60 nC @ 10 V 250 V ±30V 3200 pF @ 25 V - - TO-220FM - 2.23W (Ta), 40W (Tc) 150°C (TJ)
RCX100N25

RCX100N25

MOSFET N-CH 250V 10A TO220FM

Rohm Semiconductor

387 -
RCX100N25

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 10V - Through Hole - - 250 V ±30V - - - TO-220FM - 40W (Tc) 150°C (TJ)
RS6L090BGTB1

RS6L090BGTB1

NCH 60V 90A, HSOP8, POWER MOSFET

Rohm Semiconductor

1,839 -
RS6L090BGTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 90A (Tc) 4.5V, 10V 4.7mOhm @ 90A, 10V Surface Mount 2.5V @ 1mA 28 nC @ 10 V 60 V ±20V 1950 pF @ 30 V - - 8-HSOP - 3W (Ta), 73W (Tc) 150°C (TJ)
RSS110N03TB

RSS110N03TB

MOSFET N-CH 30V 11A 8SOP

Rohm Semiconductor

3,997 -
RSS110N03TB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 11A (Ta) 4V, 10V 10.7mOhm @ 11A, 10V Surface Mount 2.5V @ 1mA 17 nC @ 5 V 30 V 20V 1300 pF @ 10 V - - 8-SOP - 2W (Ta) 150°C (TJ)
R6015ENZC17

R6015ENZC17

MOSFET N-CH 600V 15A TO3PF

Rohm Semiconductor

218 -
R6015ENZC17

数据表

- TO-3P-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 290mOhm @ 6.5A, 10V Through Hole 4V @ 1mA 40 nC @ 10 V 600 V ±20V 910 pF @ 25 V - - TO-3PF - 120W (Tc) 150°C (TJ)
RQ3P300BHTB1

RQ3P300BHTB1

NCH 100V 39A, HSMT8, POWER MOSFE

Rohm Semiconductor

14,189 -
RQ3P300BHTB1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 39A (Tc) 6V, 10V 15.5mOhm @ 10A, 10V Surface Mount 4V @ 1mA 36 nC @ 10 V 100 V ±20V 2040 pF @ 50 V - - 8-HSMT (3.2x3) - 32W (Tc) 150°C (TJ)
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