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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
UPA2815T1S-E2-AT

UPA2815T1S-E2-AT

MOSFET P-CH 30V 21A 8HWSON

Renesas Electronics Corporation

10,000 -
UPA2815T1S-E2-AT

数据表

- 8-PowerWDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 21A (Tc) 4.5V, 10V 11mOhm @ 21A, 10V Surface Mount - 47 nC @ 10 V 30 V ±20V 1760 pF @ 10 V - - 8-HWSON (3.3x3.3) - 1.5W (Ta) 150°C (TJ)
RJK03P8DPA-00#J5A

RJK03P8DPA-00#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

675,000 -
RJK03P8DPA-00#J5A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK0390DPA-02#J5A

RJK0390DPA-02#J5A

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

339,000 -
RJK0390DPA-02#J5A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK0390DPA-00#J53

RJK0390DPA-00#J53

MOSFET N-CH 30V 65A 8WPAK

Renesas Electronics Corporation

60,000 -
RJK0390DPA-00#J53

数据表

- 8-PowerWDFN Bulk Obsolete N-Channel MOSFET (Metal Oxide) 65A (Ta) - 2.2mOhm @ 32.5A, 10V Surface Mount - 54 nC @ 4.5 V 30 V - 8900 pF @ 10 V - - 8-WPAK - 60W (Tc) -
UPA2780GR-E1-A

UPA2780GR-E1-A

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

19,848 -
UPA2780GR-E1-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NP160N055TUJ-E1-AY

NP160N055TUJ-E1-AY

MOSFET N-CH 55V 160A TO263-7

Renesas Electronics Corporation

8,918 -
NP160N055TUJ-E1-AY

数据表

- TO-263-7, D2PAK (6 Leads + Tab) Cut Tape (CT) Obsolete N-Channel MOSFET (Metal Oxide) 160A (Tc) 10V 3mOhm @ 80A, 10V Surface Mount 4V @ 250µA 180 nC @ 10 V 55 V ±20V 10350 pF @ 25 V - - TO-263-7 - 1.8W (Ta), 250W (Tc) 175°C (TJ)
RJK0328DPB-00#J0

RJK0328DPB-00#J0

MOSFET N-CH 30V 60A LFPAK

Renesas Electronics Corporation

11,589 -
RJK0328DPB-00#J0

数据表

- SC-100, SOT-669 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60A (Ta) - 2.1mOhm @ 30A, 10V Surface Mount - 42 nC @ 4.5 V 30 V - 6380 pF @ 10 V - - LFPAK - - -
RJJ0621DPP-00#T2

RJJ0621DPP-00#T2

P-CHANNEL POWER MOSFET

Renesas Electronics Corporation

10,416 -
RJJ0621DPP-00#T2

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
UPA2816T1S-E2-AT

UPA2816T1S-E2-AT

MOSFET P-CH 30V 17A 8HWSON

Renesas Electronics Corporation

10,000 -
UPA2816T1S-E2-AT

数据表

- 8-PowerWDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 17A (Tc) 4.5V, 10V 15.5mOhm @ 17A, 10V Surface Mount - 33.4 nC @ 10 V 30 V +20V, -25V 1160 pF @ 10 V - - 8-HWSON (3.3x3.3) - 1.5W (Ta) 150°C (TJ)
2SK2932-E

2SK2932-E

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

9,378 -
2SK2932-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
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