| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压(最大导通电阻,最小导通电阻) | 导通电阻 (Rds On)(最大值)@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th))(最大值)@ Id | 栅极电荷 (Qg)(最大值)@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)(最大值) | 输入电容 (Ciss)(最大值)@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗(最大值) | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
FX6KMJ-36A, 150V, 0.5 Renesas Electronics Corporation |
750 | - |
|
数据表 |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 6A (Tc) | 4V, 10V | 530mOhm @ 3A, 10V | Through Hole | 2V @ 1mA | - | 150 V | ±20V | 2420 pF @ 10 V | - | - | TO-220FN | - | 25W (Tc) | -55°C ~ 150°C |
|
2SJ133-Z-E1-AZPOWER FIELD-EFFECT TRANSISTOR Renesas Electronics Corporation |
5,868 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK6024DPD-00#J2N-CHANNEL POWER MOSFET Renesas Electronics Corporation |
3,000 | - |
|
数据表 |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 400mA (Ta) | 10V | 42Ohm @ 200mA, 10V | Surface Mount | - | 4.3 nC @ 10 V | 600 V | ±30V | 37.5 pF @ 25 V | - | - | MP-3A | - | 27.2W (Tc) | 150°C (TJ) |
|
2SK3811-ZP-E1-AYMOSFET N-CH 40V 110A TO263 Renesas Electronics Corporation |
2,265 | - |
|
数据表 |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 110A (Tc) | 10V | 1.8mOhm @ 55A, 10V | Surface Mount | - | 260 nC @ 10 V | 40 V | ±20V | 17700 pF @ 10 V | - | - | TO-263 | - | 1.5W (Ta), 213W (Tc) | 150°C (TJ) |
|
HAT2033RJ01-ELN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
2,450 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
UPA2710GR-E2-AP-CHANNEL POWER MOSFET Renesas Electronics Corporation |
27,500 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJJ0621DPP-0P#T2P-CHANNEL POWER MOSFET Renesas Electronics Corporation |
18,428 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2SK3481(0)-Z-E1-AZN-CHANNEL POWER MOSFET Renesas Electronics Corporation |
1,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
RJK03R1DPA-00#J5AN-CHANNEL MOSFET Renesas Electronics Corporation |
924,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
2SK3114-S17-AZPOWER FIELD-EFFECT TRANSISTOR Renesas Electronics Corporation |
1,000 | - |
|
数据表 |
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |