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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
2SJ649-AZ

2SJ649-AZ

MOSFET P-CH 60V 20A TO220

Renesas Electronics Corporation

3,137 -
2SJ649-AZ

数据表

- TO-220-3 Isolated Tab Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20A (Tc) 4V, 10V 48mOhm @ 10A, 10V Through Hole - 38 nC @ 10 V 60 V ±20V 1900 pF @ 10 V - - TO-220 Isolated Tab - 2W (Ta), 25W (Tc) 150°C (TJ)
2SK3480-AZ

2SK3480-AZ

MOSFET N-CH 100V 50A TO220AB

Renesas Electronics Corporation

6,466 -
2SK3480-AZ

数据表

- TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 4.5V, 10V 31mOhm @ 25A, 10V Through Hole - 74 nC @ 10 V 100 V ±20V 3600 pF @ 10 V - - TO-220AB - 1.5W (Ta), 84W (Tc) 150°C (TJ)
2SK3481-AZ

2SK3481-AZ

MOSFET N-CH 100V 30A TO220AB

Renesas Electronics Corporation

4,920 -
2SK3481-AZ

数据表

- TO-220-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 50mOhm @ 15A, 10V Through Hole - 48 nC @ 10 V 100 V ±20V 2300 pF @ 10 V - - TO-220AB - 1.5W (Ta), 56W (Tc) 150°C (TJ)
2SK3482-AZ

2SK3482-AZ

MOSFET N-CH 100V 36A TO251

Renesas Electronics Corporation

3,202 -
2SK3482-AZ

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 36A (Ta) 4.5V, 10V 33mOhm @ 18A, 10V Through Hole - 72 nC @ 10 V 100 V ±20V 3600 pF @ 10 V - - TO-251 - 1W (Ta), 50W (Tc) 150°C (TJ)
2SK3483-AZ

2SK3483-AZ

MOSFET N-CH 100V 28A TO251

Renesas Electronics Corporation

7,250 -
2SK3483-AZ

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 28A (Ta) 4.5V, 10V 52mOhm @ 14A, 10V Through Hole - 49 nC @ 10 V 100 V ±20V 2300 pF @ 10 V - - TO-251 - 1W (Ta), 40W (Tc) 150°C (TJ)
2SK3813-AZ

2SK3813-AZ

MOSFET N-CH 40V 60A TO251

Renesas Electronics Corporation

8,643 -
2SK3813-AZ

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60A (Ta) 4.5V, 10V 5.3mOhm @ 30A, 10V Through Hole - 96 nC @ 10 V 40 V ±20V 5500 pF @ 10 V - - TO-251 - 1W (Ta), 84W (Tc) 150°C (TJ)
NP109N055PUJ-E1B-AY

NP109N055PUJ-E1B-AY

MOSFET N-CH 55V 110A TO263

Renesas Electronics Corporation

3,469 -
NP109N055PUJ-E1B-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 110A (Ta) 10V 3.2mOhm @ 55A, 10V Surface Mount 4V @ 250µA 180 nC @ 10 V 55 V ±20V 10350 pF @ 25 V - - TO-263 - 1.8W (Ta), 220W (Tc) 175°C (TJ)
NP110N03PUG-E1-AY

NP110N03PUG-E1-AY

MOSFET N-CH 30V 110A TO263

Renesas Electronics Corporation

5,414 -
NP110N03PUG-E1-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 1.5mOhm @ 55A, 10V Surface Mount 4V @ 250µA 380 nC @ 10 V 30 V ±20V 24600 pF @ 25 V - - TO-263 - 1.8W (Ta), 288W (Tc) 175°C (TJ)
NP110N04PUG-E1-AY

NP110N04PUG-E1-AY

MOSFET N-CH 40V 110A TO263

Renesas Electronics Corporation

6,664 -
NP110N04PUG-E1-AY

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 10V 1.8mOhm @ 55A, 10V Surface Mount 4V @ 250µA 390 nC @ 10 V 40 V ±20V 25700 pF @ 25 V - - TO-263 - 1.8W (Ta), 288W (Tc) 175°C (TJ)
NP160N04TDG-E1-AY

NP160N04TDG-E1-AY

MOSFET N-CH 40V 160A TO263-7

Renesas Electronics Corporation

7,079 -
NP160N04TDG-E1-AY

数据表

- TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 160A (Ta) 4.5V, 10V 2mOhm @ 80A, 10V Surface Mount 2.5V @ 250µA 270 nC @ 10 V 40 V ±20V 15750 pF @ 25 V - - TO-263-7 - 1.8W (Ta), 220W (Tc) 175°C (TJ)
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