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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
FQA17P10

FQA17P10

MOSFET P-CH 100V 18A TO3P

onsemi

8,295 -
FQA17P10

数据表

QFET® TO-3P-3, SC-65-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 18A (Tc) 10V 190mOhm @ 9A, 10V Through Hole 4V @ 250µA 39 nC @ 10 V 100 V ±30V 1100 pF @ 25 V - - TO-3P - 120W (Tc) -55°C ~ 175°C (TJ)
PMN48XP,125

PMN48XP,125

MOSFET P-CH 20V 4.1A 6TSOP

Nexperia USA Inc.

5,780 -
PMN48XP,125

数据表

- SC-74, SOT-457 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.1A (Ta) 2.5V, 4.5V 55mOhm @ 2.4A, 4.5V Surface Mount 1.25V @ 250µA 13 nC @ 4.5 V 20 V ±12V 1000 pF @ 10 V - - 6-TSOP - 530mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ)
DI017N06PQ-AQ

DI017N06PQ-AQ

MOSFET POWERQFN 5X6 N 60V

Diotec Semiconductor

5,000 -
DI017N06PQ-AQ

数据表

- - Tape & Reel (TR) Active N-Channel - 17A - - Surface Mount - - - - - - - PowerQFN 5x6 - 21W -
TPC8129,LQ(S

TPC8129,LQ(S

MOSFET P-CH 30V 9A 8SOP

Toshiba Semiconductor and Storage

4,634 -
TPC8129,LQ(S

数据表

U-MOSVI 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 9A (Ta) 4.5V, 10V 22mOhm @ 4.5A, 10V Surface Mount 2V @ 200µA 39 nC @ 10 V 30 V +20V, -25V 1650 pF @ 10 V - - 8-SOP - 1W (Ta) 150°C (TJ)
DMT4011LFG-13

DMT4011LFG-13

MOSFET N-CH 40V 30A POWERDI3333

Diodes Incorporated

2,957 -
DMT4011LFG-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 11mOhm @ 20A, 10V Surface Mount 3V @ 250µA 15.1 nC @ 10 V 40 V +20V, -16V 767 pF @ 20 V AEC-Q101 - PowerDI3333-8 Automotive 15.6W (Tc) -55°C ~ 150°C (TJ)
SQA409CEJW-T1_GE3

SQA409CEJW-T1_GE3

AUTOMOTIVE P-CHANNEL 12 V (D-S)

Vishay Siliconix

2,944 -
SQA409CEJW-T1_GE3

数据表

TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 9A (Tc) 1.8V, 4.5V 19mOhm @ 4.5A, 4.5V Surface Mount, Wettable Flank 1V @ 250µA 33 nC @ 4.5 V 12 V ±8V 3070 pF @ 6 V - - PowerPAK®SC-70W-6 - 13.6W (Tc) -55°C ~ 175°C (TJ)
BSC032N03S

BSC032N03S

MOSFET N-CH 30V 23A/100A TDSON

Infineon Technologies

3,469 -
BSC032N03S

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 23A (Ta), 100A (Tc) 4.5V, 10V 3.2mOhm @ 50A, 10V Surface Mount 2V @ 70µA 39 nC @ 5 V 30 V ±20V 5080 pF @ 15 V - - PG-TDSON-8-1 - 2.8W (Ta), 78W (Tc) -55°C ~ 150°C (TJ)
PHK24NQ04LT,518

PHK24NQ04LT,518

MOSFET N-CH 40V 21.2A 8SO

NXP USA Inc.

6,464 -
PHK24NQ04LT,518

数据表

TrenchMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 21.2A (Tc) 4.5V, 10V 7.7mOhm @ 14A, 10V Surface Mount 2V @ 1mA 64 nC @ 10 V 40 V ±20V 2985 pF @ 25 V - - 8-SO - 6.25W (Tc) -55°C ~ 150°C (TJ)
IRF614PBF

IRF614PBF

MOSFET N-CH 250V 2.7A TO220AB

Vishay Siliconix

3,912 -
IRF614PBF

数据表

- TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.7A (Tc) 10V 2Ohm @ 1.6A, 10V Through Hole 4V @ 250µA 8.2 nC @ 10 V 250 V ±20V 140 pF @ 25 V - - TO-220AB - 36W (Tc) -55°C ~ 150°C (TJ)
IPD35N10S3L26ATMA2

IPD35N10S3L26ATMA2

MOSFET_(75V 120V(

Infineon Technologies

6,168 -
IPD35N10S3L26ATMA2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 24mOhm @ 35A, 10V Surface Mount 2.4V @ 39µA 39 nC @ 10 V 100 V ±20V 2700 pF @ 25 V AEC-Q101 - PG-TO252-3-11 Automotive 71W (Tc) -55°C ~ 175°C (TJ)
STK184N4F7AG

STK184N4F7AG

DISCRETE

STMicroelectronics

9,105 -
STK184N4F7AG

数据表

STripFET™ F7 SC-100, SOT-669 Bulk Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 10V 2mOhm @ 50A, 10V Surface Mount 4V @ 250µA 35 nC @ 10 V 40 V ±20V 2750 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 136W (Tc) -55°C ~ 175°C (TJ)
TSM052NB03CR

TSM052NB03CR

30V, 90A, SINGLE N-CHANNEL POWE

Taiwan Semiconductor Corporation

9,020 -
TSM052NB03CR

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 17A (Ta), 90A (Tc) 4.5V, 10V 5.2mOhm @ 17A, 10V Surface Mount 2.5V @ 250µA 41 nC @ 10 V 30 V ±20V 2294 pF @ 15 V - - 8-PDFN (5x6) - 3.1W (Ta), 83W (Tc) -55°C ~ 175°C (TJ)
STD9N60M6

STD9N60M6

DISCRETE

STMicroelectronics

7,786 -
STD9N60M6

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 750mOhm @ 3A, 10V Surface Mount 4.75V @ 250µA 10 nC @ 10 V 600 V ±25V 273 pF @ 100 V - - TO-252 (DPAK) - 76W (Tc) -55°C ~ 150°C (TJ)
AOD2144

AOD2144

N

Alpha & Omega Semiconductor Inc.

9,870 -
AOD2144

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Ta), 120A (Tc) 4.5V, 10V 2.3mOhm @ 20A, 10V Surface Mount 2.4V @ 250µA 95 nC @ 10 V 40 V ±20V 5225 pF @ 20 V - - TO-252 (DPAK) - 6.2W (Ta), 156W (Tc) -55°C ~ 150°C (TJ)
XP4NAR85CMT

XP4NAR85CMT

MOSFET N CH 40V 61.4A PMPAK5X6

YAGEO XSEMI

7,992 -
XP4NAR85CMT

数据表

XP4NAR85C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 61.4A (Ta), 100A (Tc) 4.5V, 10V 0.85mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 192 nC @ 10 V 40 V ±20V 9120 pF @ 30 V - - 8-PMPAK (5x6) - 5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
XP10NB6R9CST

XP10NB6R9CST

MOSFET N CH 100V 20A SPPAK5X6

YAGEO XSEMI

8,352 -
XP10NB6R9CST

数据表

XP10NB6R9C SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20A (Ta), 100A (Tc) 10V 6.9mOhm @ 30A, 10V Surface Mount 4V @ 250µA 89 nC @ 10 V 100 V ±20V 4768 pF @ 80 V - - SPPAK 5X6 - 6W (Ta), 187.5W (Tc) -55°C ~ 175°C (TJ)
DMT15H017SK3-13

DMT15H017SK3-13

MOSFET BVDSS: 101V~250V TO252 T&

Diodes Incorporated

7,783 -
DMT15H017SK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 68A (Tc) 8V, 10V 18.5mOhm @ 20A, 10V Surface Mount 4V @ 250µA 34 nC @ 10 V 150 V ±20V 2344 pF @ 75 V - - TO-252 (DPAK) - 1.7W (Ta) -55°C ~ 150°C (TJ)
BSB104N08NP3GXUMA1

BSB104N08NP3GXUMA1

TRENCH 40<-<100V

Infineon Technologies

3,861 -
BSB104N08NP3GXUMA1

数据表

- DirectFET™ Isometric MP Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 50A (Tc) 10V 10.4mOhm @ 10A, 10V Surface Mount 3.5V @ 40µA 31 nC @ 10 V 80 V ±20V 2100 pF @ 40 V - - MG-WDSON-2-6 - 2.8W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
IPP039N04LGXKSA1

IPP039N04LGXKSA1

MOSFET N-CH 40V 80A TO220-3

Infineon Technologies

9,954 -
IPP039N04LGXKSA1

数据表

OptiMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80A (Tc) 4.5V, 10V 3.9mOhm @ 80A, 10V Through Hole 2V @ 45µA 78 nC @ 10 V 40 V ±20V 6100 pF @ 25 V - - PG-TO220-3-1 - 94W (Tc) -55°C ~ 175°C (TJ)
BSB104N08NP3GXUMA2

BSB104N08NP3GXUMA2

TRENCH 40<-<100V

Infineon Technologies

4,191 -
BSB104N08NP3GXUMA2

数据表

- DirectFET™ Isometric MP Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 50A (Tc) 10V 10.4mOhm @ 10A, 10V Surface Mount 3.5V @ 40µA 31 nC @ 10 V 80 V ±20V 2100 pF @ 40 V - - MG-WDSON-2-6 - 2.8W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
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