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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFR420TRRPBF

IRFR420TRRPBF

MOSFET N-CH 500V 2.4A DPAK

Vishay Siliconix

5,091 -
IRFR420TRRPBF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V Surface Mount 4V @ 250µA 19 nC @ 10 V 500 V ±20V 360 pF @ 25 V - - DPAK - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ)
FDC697P

FDC697P

MOSFET P-CH 20V 8A SUPERSOT6

onsemi

2,885 -
FDC697P

数据表

PowerTrench® 6-SSOT Flat-lead, SuperSOT™-6 FLMP Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 8A (Ta) 1.8V, 4.5V 20mOhm @ 8A, 4.5V Surface Mount 1.5V @ 250µA 55 nC @ 4.5 V 20 V ±8V 3524 pF @ 10 V - - SuperSOT™-6 FLMP - 2W (Ta) -55°C ~ 150°C (TJ)
IRFR3418TRLPBF

IRFR3418TRLPBF

MOSFET N-CH 80V 70A DPAK

Infineon Technologies

5,150 -
IRFR3418TRLPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 70A (Tc) 10V 14mOhm @ 18A, 10V Surface Mount 5.5V @ 250µA 94 nC @ 10 V 80 V ±20V 3510 pF @ 25 V - - TO-252AA (DPAK) - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ)
MSJPF06N80A-BP

MSJPF06N80A-BP

MOSFET

Micro Commercial Co

7,097 -
MSJPF06N80A-BP

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 6A 10V 1.2Ohm @ 2.5A, 10V Through Hole 4.5V @ 250µA 11 nC @ 10 V 800 V ±30V 349 pF @ 100 V - - TO-220F - 22W (Tc) -55°C ~ 150°C (TJ)
FDS3570

FDS3570

MOSFET N-CH 80V 9A 8SOIC

onsemi

2,033 -
FDS3570

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Ta) 6V, 10V 20mOhm @ 9A, 10V Surface Mount 4V @ 250µA 76 nC @ 10 V 80 V ±20V 2750 pF @ 25 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
FDS7779Z

FDS7779Z

MOSFET P-CH 30V 16A 8SOIC

onsemi

2,876 -
FDS7779Z

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 16A (Ta) 4.5V, 10V 7.2mOhm @ 16A, 10V Surface Mount 3V @ 250µA 98 nC @ 10 V 30 V ±25V 3800 pF @ 15 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
RSS120N03FU6TB

RSS120N03FU6TB

MOSFET N-CH 30V 12A 8SOP

Rohm Semiconductor

6,280 -
RSS120N03FU6TB

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta) 4V, 10V 10mOhm @ 12A, 10V Surface Mount 2.5V @ 1mA 25 nC @ 5 V 30 V 20V 1360 pF @ 10 V - - 8-SOP - 2W (Ta) 150°C (TJ)
MCB70N10YA-TP

MCB70N10YA-TP

MOSFET

Micro Commercial Co

4,775 -
MCB70N10YA-TP

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Tc) 4.5V, 10V 8.6mOhm @ 20A, 10V Surface Mount 3V @ 250µA 42 nC @ 10 V 100 V ±20V 2298 pF @ 25 V - - D2PAK - 125W -55°C ~ 150°C (TJ)
IRF7433TR

IRF7433TR

MOSFET P-CH 12V 8.9A 8SO

Infineon Technologies

3,034 -
IRF7433TR

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 8.9A (Ta) 1.8V, 4.5V 24mOhm @ 8.7A, 4.5V Surface Mount 900mV @ 250µA 20 nC @ 4.5 V 12 V ±8V 1877 pF @ 10 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
NDS335N

NDS335N

MOSFET N-CH 20V 1.7A SUPERSOT3

onsemi

6,845 -
NDS335N

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.7A (Ta) 2.7V, 4.5V 110mOhm @ 1.7A, 4.5V Surface Mount 1V @ 250µA 9 nC @ 4.5 V 20 V 8V 240 pF @ 10 V - - SOT-23-3 - 500mW (Ta) -55°C ~ 150°C (TJ)
FQD1N60CTM

FQD1N60CTM

MOSFET N-CH 600V 1A DPAK

onsemi

7,122 -
FQD1N60CTM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1A (Tc) 10V 11.5Ohm @ 500mA, 10V Surface Mount 4V @ 250µA 6.2 nC @ 10 V 600 V ±30V 170 pF @ 25 V - - TO-252AA - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ)
CSD25304W1015

CSD25304W1015

MOSFET P-CH 20V 3A 6DSBGA

Texas Instruments

2,757 -
CSD25304W1015

数据表

NexFET™ 6-UFBGA, DSBGA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3A (Ta) 1.8V, 4.5V 32.5mOhm @ 1.5A, 4.5V Surface Mount 1.15V @ 250µA 4.4 nC @ 4.5 V 20 V ±8V 595 pF @ 10 V - - 6-DSBGA (1x1.5) - 750mW (Ta) -55°C ~ 150°C (TJ)
DMN1004UFDF-7

DMN1004UFDF-7

MOSFET N-CH 12V 15A 6UDFN

Diodes Incorporated

2,324 -
DMN1004UFDF-7

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Ta) 2.5V, 4.5V 4.8mOhm @ 15A, 4.5V Surface Mount 1V @ 250µA 47 nC @ 10 V 12 V ±8V 2385 pF @ 6 V - - U-DFN2020-6 - 2.1W (Ta) -55°C ~ 150°C (TJ)
DMP3056LSSQ-13

DMP3056LSSQ-13

MOSFET BVDSS: 25V~30V SO-8 T&R 2

Diodes Incorporated

2,300 -
DMP3056LSSQ-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.9A (Ta) 4.5V, 10V 45mOhm @ 6A, 10V Surface Mount 2.1V @ 250µA 17.3 nC @ 10 V 30 V ±20V 969 pF @ 15 V AEC-Q101 - 8-SO Automotive 1.2W (Ta) -55°C ~ 150°C (TJ)
SIRA88BDP-T1-GE3

SIRA88BDP-T1-GE3

MOSFET N-CH 30V 19A/40A PPAK SO8

Vishay Siliconix

5,490 -
SIRA88BDP-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 19A (Ta), 40A (Tc) 4.5V, 10V 6.83mOhm @ 10A, 10V Surface Mount 2.4V @ 250µA 19 nC @ 10 V 30 V +20V, -16V 680 pF @ 15 V - - PowerPAK® SO-8 - 3.8W (Ta), 17W (Tc) -55°C ~ 150°C (TJ)
NTTFS015N04CTAG

NTTFS015N04CTAG

MOSFET N-CH 40V 9.4A/27A 8WDFN

onsemi

3,915 -
NTTFS015N04CTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9.4A (Ta), 27A (Tc) 10V 17.3mOhm @ 7.5A, 10V Surface Mount 3.5V @ 20µA 6.3 nC @ 10 V 40 V ±20V 325 pF @ 25 V - - 8-WDFN (3.3x3.3) - 2.9W (Ta), 23W (Tc) -55°C ~ 175°C (TJ)
TSM4806CS RLG

TSM4806CS RLG

MOSFET N-CHANNEL 20V 28A 8SOP

Taiwan Semiconductor Corporation

3,666 -
TSM4806CS RLG

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 28A (Ta) 1.8V, 4.5V 20mOhm @ 20A, 4.5V Surface Mount 1V @ 250µA 12.3 nC @ 4.5 V 20 V ±8V 961 pF @ 15 V - - 8-SOP - 2W (Ta) -55°C ~ 150°C (TJ)
DMG3401LSNQ-7

DMG3401LSNQ-7

MOSFET P-CH 30V 3A SC59-3

Diodes Incorporated

2,965 -
DMG3401LSNQ-7

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3A (Ta) 2.5V, 10V 50mOhm @ 4A, 10V Surface Mount 1.3V @ 250µA 25.1 nC @ 10 V 30 V ±12V 1326 pF @ 15 V - - SC-59-3 - 800mW -55°C ~ 150°C (TJ)
ZXM61N02FTC

ZXM61N02FTC

MOSFET N-CH 20V 1.7A SOT23-3

Diodes Incorporated

19,796 -
ZXM61N02FTC

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.7A (Ta) 2.7V, 4.5V 180mOhm @ 930mA, 4.5V Surface Mount 700mV @ 250µA (Min) 3.4 nC @ 4.5 V 20 V ±12V 160 pF @ 15 V - - SOT-23-3 - 625mW (Ta) -55°C ~ 150°C (TJ)
PJD9N10A_L2_00001

PJD9N10A_L2_00001

100V N-CHANNEL MOSFET

Panjit International Inc.

11,514 -
PJD9N10A_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.4A (Ta), 9A (Tc) 4.5V, 10V 152mOhm @ 4.5A, 10V Surface Mount 2.5V @ 250µA 19 nC @ 10 V 100 V ±20V 1021 pF @ 25 V - - TO-252AA - 2W (Ta), 31W (Tc) -55°C ~ 150°C (TJ)
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