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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SIR638DP-T1-RE3

SIR638DP-T1-RE3

MOSFET N-CH 40V 100A PPAK SO-8

Vishay Siliconix

4,426 -
SIR638DP-T1-RE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A (Tc) 4.5V, 10V 0.88mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 204 nC @ 10 V 40 V +20V, -16V 10500 pF @ 20 V - - PowerPAK® SO-8 - 104W (Tc) -55°C ~ 150°C (TJ)
FQB10N20LTM

FQB10N20LTM

MOSFET N-CH 200V 10A D2PAK

onsemi

9,474 -
FQB10N20LTM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tc) 5V, 10V 360mOhm @ 5A, 10V Surface Mount 2V @ 250µA 17 nC @ 5 V 200 V ±20V 830 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 87W (Tc) -55°C ~ 150°C (TJ)
NTB30N06T4G

NTB30N06T4G

MOSFET N-CH 60V 27A D2PAK

onsemi

8,092 -
NTB30N06T4G

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 27A (Ta) 10V 42mOhm @ 15A, 10V Surface Mount 4V @ 250µA 46 nC @ 10 V 60 V ±20V 1200 pF @ 25 V - - D2PAK - 88.2W (Tc) -55°C ~ 175°C (TJ)
RF6L025BGTCR

RF6L025BGTCR

NCH 60V 2.5A, TUMT6, POWER MOSFE

Rohm Semiconductor

3,000 -
RF6L025BGTCR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.5A (Ta) 4.5V, 10V 91mOhm @ 2.5A, 10V Surface Mount 2.5V @ 1mA 3.1 nC @ 10 V 60 V ±20V 135 pF @ 30 V - - TUMT6 - 910mW (Ta) 150°C (TJ)
PSMN1R2-30YLD/2X

PSMN1R2-30YLD/2X

PSMN1R2-30YLD/SOT669/LFPAK

Nexperia USA Inc.

2,040 -
PSMN1R2-30YLD/2X

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250A (Tc) 4.5V, 10V 1.24mOhm @ 25A, 10V Surface Mount 2.2V @ 2mA 68 nC @ 10 V 30 V ±20V 4616 pF @ 15 V - - LFPAK56, Power-SO8 - 194W (Tc) -55°C ~ 175°C (TJ)
NTD4804N-1G

NTD4804N-1G

MOSFET N-CH 30V 14.5A/124A IPAK

onsemi

7,922 -
NTD4804N-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 14.5A (Ta), 124A (Tc) 4.5V, 11.5V 4mOhm @ 30A, 10V Through Hole 2.5V @ 250µA 40 nC @ 4.5 V 30 V ±20V 4490 pF @ 12 V - - IPAK - 1.43W (Ta), 107W (Tc) -55°C ~ 175°C (TJ)
IPP026N04NF2SAKMA1

IPP026N04NF2SAKMA1

TRENCH PG-TO220-3

Infineon Technologies

7,493 -
IPP026N04NF2SAKMA1

数据表

StrongIRFET™2 TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 29A (Ta), 121A (Tc) 6V, 10V 2.6mOhm @ 70A, 10V Through Hole 3.4V @ 81µA 102 nC @ 10 V 40 V ±20V 4800 pF @ 20 V - - PG-TO220-3-U05 - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
ZVN4310ASTZ

ZVN4310ASTZ

MOSFET N-CH 100V 900MA E-LINE

Diodes Incorporated

3,700 -
ZVN4310ASTZ

数据表

- E-Line-3 Tape & Box (TB) Obsolete N-Channel MOSFET (Metal Oxide) 900mA (Ta) 5V, 10V 500mOhm @ 3A, 10V Through Hole 3V @ 1mA - 100 V ±20V 350 pF @ 25 V - - E-Line (TO-92 compatible) - 850mW (Ta) -55°C ~ 150°C (TJ)
DMTH42M4SPS-13

DMTH42M4SPS-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

2,018 -
DMTH42M4SPS-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200A (Tc) 10V 2.4mOhm @ 30A, 10V Surface Mount 4V @ 250µA 79.5 nC @ 10 V 40 V ±20V 6968 pF @ 20 V - - PowerDI5060-8 (Type K) - 3.06W (Ta), 150W (Tc) -55°C ~ 175°C (TJ)
BUK9535-55,127

BUK9535-55,127

MOSFET N-CH 55V 34A TO220AB

NXP USA Inc.

4,993 -
BUK9535-55,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 34A (Tc) 5V 35mOhm @ 17A, 5V Through Hole 2V @ 1mA - 55 V ±10V 1400 pF @ 25 V - - TO-220AB - 85W (Tc) -55°C ~ 175°C (TJ)
BUK7511-55A,127

BUK7511-55A,127

MOSFET N-CH 55V 75A TO220AB

NXP USA Inc.

8,912 -
BUK7511-55A,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 11mOhm @ 25A, 10V Through Hole 4V @ 1mA - 55 V ±20V 3093 pF @ 25 V - - TO-220AB - 166W (Tc) -55°C ~ 175°C (TJ)
DMT35M4LFDF-7

DMT35M4LFDF-7

MOSFET BVDSS: 25V~30V U-DFN2020-

Diodes Incorporated

2,943 -
DMT35M4LFDF-7

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Tc) 4.5V, 10V 6mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 14.9 nC @ 10 V 30 V ±20V 1009 pF @ 15 V - - U-DFN2020-6 (Type F) - 860mW (Ta) -55°C ~ 150°C (TJ)
PMPB15XPAX

PMPB15XPAX

MOSFET P-CH 12V 8.2A DFN2020MD-6

Nexperia USA Inc.

2,527 -
PMPB15XPAX

数据表

TrenchMOS™ 6-UDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8.2A (Ta) 1.8V, 4.5V 20mOhm @ 8.2A, 4.5V Surface Mount 1V @ 250µA 100 nC @ 4.5 V 12 V ±12V 2875 pF @ 6 V AEC-Q101 - DFN2020MD-6 Automotive 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
IPD16CN10N G

IPD16CN10N G

MOSFET N-CH 100V 53A TO252-3

Infineon Technologies

3,582 -
IPD16CN10N G

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 53A (Tc) 10V 16mOhm @ 53A, 10V Surface Mount 4V @ 61µA 48 nC @ 10 V 100 V ±20V 3220 pF @ 50 V - - PG-TO252-3 - 100W (Tc) -55°C ~ 175°C (TJ)
DMP3098LSS-13

DMP3098LSS-13

MOSFET P-CH 30V 5.3A 8SOP

Diodes Incorporated

2,454 -
DMP3098LSS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 5.3A (Ta) 4.5V, 10V 65mOhm @ 5.3A, 10V Surface Mount 2.1V @ 250µA 7.8 nC @ 10 V 30 V ±20V 336 pF @ 25 V - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRFR220NTR

IRFR220NTR

MOSFET N-CH 200V 5A DPAK

Infineon Technologies

5,174 -
IRFR220NTR

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 600mOhm @ 2.9A, 10V Surface Mount 4V @ 250µA 23 nC @ 10 V 200 V ±20V 300 pF @ 25 V - - TO-252AA (DPAK) - 43W (Tc) -55°C ~ 175°C (TJ)
PMN48XPAX

PMN48XPAX

MOSFET P-CH 20V 4.1A 6TSOP

Nexperia USA Inc.

2,355 -
PMN48XPAX

数据表

- SC-74, SOT-457 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.1A (Ta) 2.5V, 4.5V 55mOhm @ 2.4A, 4.5V Surface Mount 1.25V @ 250µA 13 nC @ 4.5 V 20 V ±12V 1000 pF @ 10 V AEC-Q101 - 6-TSOP Automotive 530mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ)
STD5NK52ZD-1

STD5NK52ZD-1

MOSFET N-CH 520V 4.4A I-PAK

STMicroelectronics

5,122 -
STD5NK52ZD-1

数据表

SuperMESH™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.4A (Tc) 10V 1.5Ohm @ 2.2A, 10V Through Hole 4.5V @ 50µA 16.9 nC @ 10 V 520 V ±30V 529 pF @ 25 V - - IPAK - 70W (Tc) -55°C ~ 150°C (TJ)
HUFA76423S3S

HUFA76423S3S

MOSFET N-CH 60V 35A D2PAK

onsemi

8,091 -
HUFA76423S3S

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 30mOhm @ 35A, 10V Surface Mount 3V @ 250µA 34 nC @ 10 V 60 V ±16V 1060 pF @ 25 V - - TO-263 (D2PAK) - 85W (Tc) -55°C ~ 175°C (TJ)
SSM6K810R,LF

SSM6K810R,LF

SMALL SIGNAL MOSFET N-CH VDSS=10

Toshiba Semiconductor and Storage

5,744 -
SSM6K810R,LF

数据表

U-MOSVIII-H 6-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.5A (Ta) 4.5V, 10V 69mOhm @ 2A, 10V Surface Mount 2.5V @ 100µA 3.2 nC @ 4.5 V 100 V ±20V 430 pF @ 15 V - - 6-TSOP-F - 1.5W (Ta) 175°C
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