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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SQJ840EP-T1_GE3

SQJ840EP-T1_GE3

MOSFET N-CH 30V 30A PPAK SO-8

Vishay Siliconix

2,355 -
SQJ840EP-T1_GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 9.3mOhm @ 10.3A, 10V Surface Mount 2.2V @ 250µA 38 nC @ 10 V 30 V ±20V 1900 pF @ 15 V AEC-Q101 - PowerPAK® SO-8 Automotive 46W (Tc) -55°C ~ 175°C (TJ)
DMT10H010LSSQ-13

DMT10H010LSSQ-13

MOSFET BVDSS: 61V~100V SO-8 T&R

Diodes Incorporated

3,698 -
DMT10H010LSSQ-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Ta) 4.5V, 10V 9.5mOhm @ 13A, 10V Surface Mount 2.8V @ 250µA 58.4 nC @ 10 V 100 V ±20V 4166 pF @ 50 V AEC-Q101 - 8-SO Automotive 1.9W (Ta) -55°C ~ 150°C (TJ)
MTP2955V

MTP2955V

MOSFET P-CH 60V 12A TO220AB

onsemi

9,426 -
MTP2955V

数据表

- TO-220-3 Tube Obsolete P-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 230mOhm @ 6A, 10V Through Hole 4V @ 250µA 30 nC @ 10 V 60 V ±15V 770 pF @ 25 V - - TO-220 - 60W (Tc) -55°C ~ 175°C (TJ)
ZXMN6A09KQTC

ZXMN6A09KQTC

MOSFET N-CH 60V 11.8A TO252

Diodes Incorporated

2,035 -
ZXMN6A09KQTC

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11.8A (Ta) 4.5V, 10V 40mOhm @ 7.3A, 10V Surface Mount 3V @ 250µA 29 nC @ 10 V 60 V ±20V 1426 pF @ 30 V AEC-Q101 - TO-252 (DPAK) Automotive 10.1W (Ta) -55°C ~ 150°C (TJ)
AOTF3N80

AOTF3N80

MOSFET N-CH 800V 2.8A TO220-3F

Alpha & Omega Semiconductor Inc.

3,899 -
AOTF3N80

数据表

- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 2.8A (Tc) 10V 4.8Ohm @ 1.5A, 10V Through Hole 4.5V @ 250µA 10 nC @ 10 V 800 V ±30V 510 pF @ 25 V - - TO-220F - 35W (Tc) -55°C ~ 150°C (TJ)
BSB104N08NP3GXUMA3

BSB104N08NP3GXUMA3

TRENCH 40<-<100V

Infineon Technologies

3,391 -
BSB104N08NP3GXUMA3

数据表

- DirectFET™ Isometric MP Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 13A (Ta), 50A (Tc) 10V 10.4mOhm @ 10A, 10V Surface Mount 3.5V @ 40µA 31 nC @ 10 V 80 V ±20V 2100 pF @ 40 V - - MG-WDSON-2-6 - 2.8W (Ta), 42W (Tc) -40°C ~ 150°C (TJ)
AUIRFU4292

AUIRFU4292

MOSFET N CH 250V 9.3A IPAK

Infineon Technologies

3,256 -
AUIRFU4292

数据表

HEXFET® TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 9.3A (Tc) 10V 345mOhm @ 5.6A, 10V Through Hole 5V @ 50µA 20 nC @ 10 V 250 V ±20V 705 pF @ 25 V - - IPAK - 100W (Tc) -55°C ~ 175°C (TJ)
STP5NB60

STP5NB60

MOSFET N-CH 600V 5A TO220AB

STMicroelectronics

4,111 -
STP5NB60

数据表

PowerMESH™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 5A (Tc) 10V 2Ohm @ 2.5A, 10V Through Hole 5V @ 250µA 30 nC @ 10 V 600 V ±30V 884 pF @ 25 V - - TO-220 - 100W (Tc) 150°C (TJ)
STP10NK50Z

STP10NK50Z

MOSFET N-CH 500V 9A TO220AB

STMicroelectronics

8,784 -
STP10NK50Z

数据表

SuperMESH™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 10V 700mOhm @ 4.5A, 10V Through Hole 4.5V @ 100µA 39.2 nC @ 10 V 500 V ±30V 1219 pF @ 25 V - - TO-220 - 125W (Tc) -55°C ~ 150°C (TJ)
MD06P115-AQ

MD06P115-AQ

MOSFET, SOT-23, -60V, -3.1A, 0,

Diotec Semiconductor

2,507 -
MD06P115-AQ

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel - 3.1A - - Surface Mount - - - - - - - SOT-26 - 1.5W -
FQD18N20V2TF

FQD18N20V2TF

MOSFET N-CH 200V 15A DPAK

onsemi

5,589 -
FQD18N20V2TF

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 140mOhm @ 7.5A, 10V Surface Mount 5V @ 250µA 26 nC @ 10 V 200 V ±30V 1080 pF @ 25 V - - TO-252AA - 2.5W (Ta), 83W (Tc) -55°C ~ 150°C (TJ)
DMP2004WK-7

DMP2004WK-7

MOSFET P-CH 20V 400MA SOT323

Diodes Incorporated

1,496 -
DMP2004WK-7

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 400mA (Ta) 1.8V, 4.5V 900mOhm @ 430mA, 4.5V Surface Mount 1V @ 250µA - 20 V ±8V 175 pF @ 16 V - - SOT-323 - 250mW (Ta) -55°C ~ 150°C (TJ)
AOTF6N90

AOTF6N90

MOSFET N-CH 900V 6A TO220-3F

Alpha & Omega Semiconductor Inc.

7,592 -
AOTF6N90

数据表

- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 2.2Ohm @ 3A, 10V Through Hole 4.5V @ 250µA 35 nC @ 10 V 900 V ±30V 1450 pF @ 25 V - - TO-220F - 50W (Tc) -55°C ~ 150°C (TJ)
SIHD6N65ET4-GE3

SIHD6N65ET4-GE3

MOSFET N-CH 650V 7A TO252AA

Vishay Siliconix

3,194 -
SIHD6N65ET4-GE3

数据表

E TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 600mOhm @ 3A, 10V Surface Mount 4V @ 250µA 48 nC @ 10 V 650 V ±30V 820 pF @ 100 V - - TO-252AA - 78W (Tc) -55°C ~ 150°C (TJ)
TSM600P03CS RLG

TSM600P03CS RLG

MOSFET P-CHANNEL 30V 4.7A 8SOP

Taiwan Semiconductor Corporation

1,355 -
TSM600P03CS RLG

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.7A (Tc) 4.5V, 10V 60mOhm @ 3A, 10V Surface Mount 2.5V @ 250µA 9.6 nC @ 4.5 V 30 V ±20V 560 pF @ 15 V - - 8-SOP - 2.1W (Tc) -55°C ~ 150°C (TJ)
SIHD6N65ET5-GE3

SIHD6N65ET5-GE3

MOSFET N-CH 650V 7A TO252AA

Vishay Siliconix

7,194 -
SIHD6N65ET5-GE3

数据表

E TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Tc) 10V 600mOhm @ 3A, 10V Surface Mount 4V @ 250µA 48 nC @ 10 V 650 V ±30V 820 pF @ 100 V - - TO-252AA - 78W (Tc) -55°C ~ 150°C (TJ)
IPA50R950CE

IPA50R950CE

MOSFET N-CH 500V 4.3A TO220-FP

Infineon Technologies

8,390 -
IPA50R950CE

数据表

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.3A (Tc) 13V 950mOhm @ 1.2A, 13V Through Hole 3.5V @ 100µA 10.5 nC @ 10 V 500 V ±20V 231 pF @ 100 V - - PG-TO220-3-31 - 25.7W (Tc) -40°C ~ 150°C (TJ)
CSD13303W1015

CSD13303W1015

MOSFET N-CH 12V 31A 6DSBGA

Texas Instruments

2,997 -
CSD13303W1015

数据表

NexFET™ 6-UFBGA, DSBGA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.5A (Tc) 2.5V, 4.5V 20mOhm @ 1.5A, 4.5V Surface Mount 1.2V @ 250µA 4.7 nC @ 4.5 V 12 V ±8V 715 pF @ 6 V - - 6-DSBGA (1x1.5) - 1.65W (Ta) -55°C ~ 150°C (TJ)
AOD66919

AOD66919

N

Alpha & Omega Semiconductor Inc.

2,367 -
AOD66919

数据表

AlphaSGT™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 22A (Ta), 70A (Tc) 4.5V, 10V 6.5mOhm @ 20A, 10V Surface Mount 2.6V @ 250µA 66 nC @ 10 V 100 V ±20V 3420 pF @ 50 V - - TO-252 (DPAK) - 6.2W (Ta), 156W (Tc) -55°C ~ 150°C (TJ)
IRLR7811WCPBF

IRLR7811WCPBF

MOSFET N-CH 30V 64A DPAK

Infineon Technologies

8,668 -
IRLR7811WCPBF

数据表

HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 64A (Tc) 4.5V, 10V 10.5mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 31 nC @ 4.5 V 30 V ±12V 2260 pF @ 15 V - - TO-252AA (DPAK) - 71W (Tc) -55°C ~ 175°C (TJ)
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