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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DMT3020LFDFQ-7

DMT3020LFDFQ-7

MOSFET BVDSS: 25V~30V U-DFN2020-

Diodes Incorporated

5,000 -
DMT3020LFDFQ-7

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8.4A (Ta) 4.5V, 10V 17mOhm @ 9A, 10V Surface Mount 2.5V @ 250µA 7 nC @ 10 V 30 V ±20V 393 pF @ 15 V AEC-Q101 - U-DFN2020-6 (Type F) Automotive 700mW (Ta) -55°C ~ 150°C (TJ)
DMN4040SK3-13

DMN4040SK3-13

MOSFET N-CH 40V 6A TO252-3

Diodes Incorporated

3,650 -
DMN4040SK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 4.5V, 10V 30mOhm @ 12A, 10V Surface Mount 3V @ 250µA 18.6 nC @ 10 V 40 V ±20V 945 pF @ 20 V - - TO-252-3 - 1.71W (Ta) -55°C ~ 150°C (TJ)
PMPB10XNE,115

PMPB10XNE,115

MOSFET N-CH 20V 9A DFN2020MD-6

Nexperia USA Inc.

1,208 -
PMPB10XNE,115

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 9A (Ta) 1.8V, 4.5V 14mOhm @ 9A, 4.5V Surface Mount 900mV @ 250µA 34 nC @ 4.5 V 20 V ±12V 2175 pF @ 10 V - - DFN2020MD-6 - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
PJQ4463AP_R2_00001

PJQ4463AP_R2_00001

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

9,955 -
PJQ4463AP_R2_00001

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.2A (Ta) 4.5V, 10V 68mOhm @ 6A, 10V Surface Mount 2.5V @ 250µA 17 nC @ 10 V 60 V ±20V 879 pF @ 30 V - - DFN3333-8 - 2.1W (Ta) -55°C ~ 150°C (TJ)
IAUCN04S7N030ATMA1

IAUCN04S7N030ATMA1

MOSFET_(20V 40V)

Infineon Technologies

5,025 -
IAUCN04S7N030ATMA1

数据表

OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100A 10V - Surface Mount - - 40 V - - AEC-Q101 - PG-TDSON-8-33 Automotive - -55°C ~ 100°C
SSM6K809R,LF

SSM6K809R,LF

SMALL SIGNAL MOSFET N-CH VDSS=60

Toshiba Semiconductor and Storage

3,272 -
SSM6K809R,LF

数据表

U-MOSVIII-H 6-SMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 4V, 10V 36mOhm @ 5A, 10V Surface Mount 2.5V @ 100µA 9.3 nC @ 10 V 60 V ±20V 550 pF @ 10 V - - 6-TSOP-F - 1.5W (Ta) 175°C
SIRA96DP-T1-GE3

SIRA96DP-T1-GE3

MOSFET N-CH 30V 16A PPAK SO-8

Vishay Siliconix

5,243 -
SIRA96DP-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 16A (Tc) 4.5V, 10V 8.8mOhm @ 10A, 10V Surface Mount 2.2V @ 250µA 15 nC @ 4.5 V 30 V +20V, -16V 1385 pF @ 15 V - - PowerPAK® SO-8 - 34.7W (Tc) -55°C ~ 150°C (TJ)
DMN10H170SFDE-7

DMN10H170SFDE-7

MOSFET N-CH 100V 2.9A 6UDFN

Diodes Incorporated

2,853 -
DMN10H170SFDE-7

数据表

- 6-PowerUDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.9A (Ta) 4.5V, 10V 160mOhm @ 5A, 10V Surface Mount 3V @ 250µA 9.7 nC @ 10 V 100 V ±20V 1167 pF @ 25 V - - U-DFN2020-6 (Type E) - 660mW (Ta) -55°C ~ 150°C (TJ)
CSD23203W

CSD23203W

MOSFET P-CH 8V 3A 6DSBGA

Texas Instruments

2,215 -
CSD23203W

数据表

NexFET™ 6-UFBGA, DSBGA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3A (Ta) 1.8V, 4.5V 19.4mOhm @ 1.5A, 4.5V Surface Mount 1.1V @ 250µA 6.3 nC @ 4.5 V 8 V -6V 914 pF @ 4 V - - 6-DSBGA (1x1.5) - 750mW (Ta) -55°C ~ 150°C (TJ)
PJQ4534P_R2_00201

PJQ4534P_R2_00201

30V N-CHANNEL (LL) SGT MOSFET

Panjit International Inc.

5,000 -
PJQ4534P_R2_00201

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJW5N10A_R2_00001

PJW5N10A_R2_00001

100V N-CHANNEL ENHANCEMENT MODE

Panjit International Inc.

2,245 -
PJW5N10A_R2_00001

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 3.5A (Ta), 5A (Tc) 4.5V, 10V 115mOhm @ 4A, 10V Surface Mount 2.5V @ 250µA 20 nC @ 10 V 100 V ±20V 1413 pF @ 25 V - - SOT-223 - 3.1W (Ta), 5.2W (Tc) -55°C ~ 150°C (TJ)
PSMN047-100NSEX

PSMN047-100NSEX

PSMN047-100NSE/SOT1220-2/DFN20

Nexperia USA Inc.

1,390 -
PSMN047-100NSEX

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 18.4A (Tc) 10V 53.4mOhm @ 5A, 10V Surface Mount 3.6V @ 1mA 13.3 nC @ 10 V 100 V ±20V 815 pF @ 50 V - - DFN2020M-6 - 42W (Tc) -55°C ~ 175°C (TJ)
MCG30N04HE3-TP

MCG30N04HE3-TP

N-CHANNEL MOSFET, DFN3333

Micro Commercial Co

13,500 -
MCG30N04HE3-TP

数据表

- 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30A (Tc) 4.5V, 10V 14mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 23 nC @ 10 V 40 V ±20V 990 pF @ 25 V AEC-Q101 - DFN3333 Automotive 24W (Tj) -55°C ~ 150°C (TJ)
PMPB08R4VPHP

PMPB08R4VPHP

PMPB08R4VP/SOT1220-2/DFN2020M-

Nexperia USA Inc.

10,000 -
PMPB08R4VPHP

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12A (Ta) 1.8V, 4.5V 9.6mOhm @ 12A, 4.5V Surface Mount 900mV @ 250µA 40 nC @ 4.5 V 12 V ±8V 2200 pF @ 6 V - - DFN2020M-6 - 1.9W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ)
IRLR4343-701PBF

IRLR4343-701PBF

MOSFET N-CH 55V 26A IPAK

Infineon Technologies

7,088 -
IRLR4343-701PBF

数据表

HEXFET® TO-252-4, DPAK (3 Leads + Tab) Tube Obsolete N-Channel MOSFET (Metal Oxide) 26A (Tc) 4.5V, 10V 50mOhm @ 4.7A, 10V Surface Mount 1V @ 250µA 42 nC @ 10 V 55 V ±20V 740 pF @ 50 V - - I-PAK (LF701) - 79W (Tc) -40°C ~ 175°C (TJ)
IPD35N12S3L24ATMA2

IPD35N12S3L24ATMA2

MOSFET_(120V 300V)

Infineon Technologies

9,169 -
IPD35N12S3L24ATMA2

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 24mOhm @ 35A, 10V Surface Mount 2.4V @ 39µA 39 nC @ 10 V 120 V ±20V 2691 pF @ 25 V AEC-Q101 - PG-TO252-3-11 Automotive 71W (Tc) -55°C ~ 175°C (TJ)
AOT10N65

AOT10N65

MOSFET N-CH 650V 10A TO220

Alpha & Omega Semiconductor Inc.

6,580 -
AOT10N65

数据表

- TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 1Ohm @ 5A, 10V Through Hole 4.5V @ 250µA 33 nC @ 10 V 650 V ±30V 1645 pF @ 25 V - - TO-220 - 250W (Tc) -55°C ~ 150°C (TJ)
AOTF10N65

AOTF10N65

MOSFET N-CH 650V 10A TO220-3F

Alpha & Omega Semiconductor Inc.

3,396 -
AOTF10N65

数据表

- TO-220-3 Full Pack Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 10A (Tc) 10V 1Ohm @ 5A, 10V Through Hole 4.5V @ 250µA 33 nC @ 10 V 650 V ±30V 1645 pF @ 25 V - - TO-220F - 50W (Tc) -55°C ~ 150°C (TJ)
AOT2606L

AOT2606L

MOSFET N-CH 60V 13A/72A TO220

Alpha & Omega Semiconductor Inc.

3,238 -
AOT2606L

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 72A (Tc) 10V 6.5mOhm @ 20A, 10V Through Hole 3.5V @ 250µA 75 nC @ 10 V 60 V ±20V 4050 pF @ 30 V - - TO-220 - 2.1W (Ta), 115W (Tc) -55°C ~ 175°C (TJ)
AOTF2606L

AOTF2606L

MOSFET N-CH 60V 13A/54A TO220-3F

Alpha & Omega Semiconductor Inc.

4,001 -
AOTF2606L

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 54A (Tc) 10V 6.5mOhm @ 20A, 10V Through Hole 3.5V @ 250µA 75 nC @ 10 V 60 V ±20V 4050 pF @ 30 V - - TO-220F - 2.1W (Ta), 36.5W (Tc) -55°C ~ 175°C (TJ)
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