富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DMPH2040UVTQ-7

DMPH2040UVTQ-7

MOSFET P-CH 20V 5.6/11.7A TSOT26

Diodes Incorporated

3,000 -
DMPH2040UVTQ-7

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 5.6A (Ta), 11.7A (Tc) 2.5V, 4.5V 38mOhm @ 8.9A, 4.5V Surface Mount 1.5V @ 250µA 19 nC @ 8 V 20 V ±12V 834 pF @ 10 V AEC-Q101 - TSOT-26 Automotive 1W (Ta) -55°C ~ 175°C (TJ)
QS5U34TR

QS5U34TR

MOSFET N-CH 20V 1.5A TSMT5

Rohm Semiconductor

2,940 -
QS5U34TR

数据表

- SOT-23-5 Thin, TSOT-23-5 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.5A (Ta) 1.8V, 4.5V 180mOhm @ 1.5A, 4.5V Surface Mount 1.3V @ 1mA 2.5 nC @ 4.5 V 20 V 10V 110 pF @ 10 V - Schottky Diode (Isolated) TSMT5 - 1.25W (Ta) 150°C
DMN10H220LVT-7

DMN10H220LVT-7

MOSFET N-CH 100V 1.87A TSOT26

Diodes Incorporated

2,409 -
DMN10H220LVT-7

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 1.87A (Ta) 4.5V, 10V 220mOhm @ 1.6A, 10V Surface Mount 2.5V @ 250µA 8.3 nC @ 10 V 100 V ±16V 401 pF @ 25 V - - TSOT-26 - 1.67W (Ta) -55°C ~ 150°C (TJ)
SIL04P06YHE3-TP

SIL04P06YHE3-TP

P-CHANNEL MOSFET,SOT23-6L

Micro Commercial Co

4,960 -
SIL04P06YHE3-TP

数据表

- SOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3.5A (Ta) 4.5V, 10V 85mOhm @ 4A, 10V Surface Mount 2.5V @ 250µA 4.27 nC @ 4.5 V 60 V ±20V 491 pF @ 25 V AEC-Q101 - SOT-23-6L Automotive 1.7W (Tj) -55°C ~ 150°C (TJ)
TSM2NB60CH C5G

TSM2NB60CH C5G

MOSFET N-CHANNEL 600V 2A TO251

Taiwan Semiconductor Corporation

15,000 -
TSM2NB60CH C5G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 2A (Tc) 10V 4.4Ohm @ 1A, 10V Through Hole 4.5V @ 250µA 9.4 nC @ 10 V 600 V ±30V 249 pF @ 25 V - - TO-251 (IPAK) - 44W (Tc) -55°C ~ 150°C (TJ)
MCAC5D5N03YL-TP

MCAC5D5N03YL-TP

MOSFET N-CH 30 55A DFN5060

Micro Commercial Co

10,000 -
MCAC5D5N03YL-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55A (Tc) 4.5V, 10V 5.5mOhm @ 15A, 10V Surface Mount 2.2V @ 250µA 12.4 nC @ 10 V 30 V ±20V 560 pF @ 15 V - - DFN5060 - 39W (Tj) -55°C ~ 150°C (TJ)
DMP3013SFV-13

DMP3013SFV-13

MOSFET P-CH 30V 12A PWRDI3333

Diodes Incorporated

5,591 -
DMP3013SFV-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12A (Ta), 35A (Tc) 4.5V, 10V 9.5mOhm @ 11.5A, 10V Surface Mount 3V @ 250µA 33.7 nC @ 10 V 30 V ±25V 1674 pF @ 15 V - - PowerDI3333-8 (Type UX) - 940mW (Ta) -55°C ~ 150°C (TJ)
MCAC7D0N04L-TP

MCAC7D0N04L-TP

MOSFET N-CH 40 75A DFN5060

Micro Commercial Co

5,000 -
MCAC7D0N04L-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75A (Tc) 4.5V, 10V 7mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 42 nC @ 10 V 40 V ±20V 1900 pF @ 20 V - - DFN5060 - 83W (Tj) -55°C ~ 150°C (TJ)
DMG4466SSSL-13

DMG4466SSSL-13

MOSFET N-CH 30V 10A 8SO

Diodes Incorporated

3,000 -
DMG4466SSSL-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 10A (Ta) 4.5V, 10V 23mOhm @ 10A, 10V Surface Mount 2.4V @ 250µA 17 nC @ 10 V 30 V ±20V 478.9 pF @ 15 V - - 8-SO - 1.42W (Ta) -55°C ~ 150°C (TJ)
DMN1017UCP3-7

DMN1017UCP3-7

MOSFET N-CH 12V 7.5A X3DSN1010-3

Diodes Incorporated

2,513 -
DMN1017UCP3-7

数据表

- 3-XDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7.5A (Ta) 1.8V, 3.3V 17mOhm @ 5A, 3.3V Surface Mount 1V @ 250µA 16 nC @ 3.3 V 12 V ±8V 1503 pF @ 6 V - - X3-DSN1010-3 - 1.47W -55°C ~ 150°C (TJ)
DMP3045LFVWQ-7

DMP3045LFVWQ-7

MOSFET BVDSS: 25V~30V POWERDI333

Diodes Incorporated

1,728 -
DMP3045LFVWQ-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 5.7A (Ta), 19.9A (Tc) 4.5V, 10V 42mOhm @ 4.9A, 10V Surface Mount, Wettable Flank 2.1V @ 250µA 13.6 nC @ 10 V 30 V ±20V 782 pF @ 15 V AEC-Q101 - PowerDI3333-8 (SWP) Type UX Automotive 900mW (Ta) -55°C ~ 150°C (TJ)
DMP3036SFV-7

DMP3036SFV-7

MOSFET P-CH 30V 30A POWERDI3333

Diodes Incorporated

1,693 -
DMP3036SFV-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30A (Ta) 5V, 10V 20mOhm @ 8A, 10V Surface Mount 2.5V @ 250µA 16.5 nC @ 10 V 30 V ±25V 1931 pF @ 15 V - - PowerDI3333-8 (Type UX) - 2.3W (Ta) -55°C ~ 150°C (TJ)
TSM1NB60CH C5G

TSM1NB60CH C5G

MOSFET N-CHANNEL 600V 1A TO251

Taiwan Semiconductor Corporation

14,962 -
TSM1NB60CH C5G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 1A (Tc) 10V 10Ohm @ 500mA, 10V Through Hole 4.5V @ 250µA 6.1 nC @ 10 V 600 V ±30V 138 pF @ 25 V - - TO-251 (IPAK) - 39W (Tc) -55°C ~ 150°C (TJ)
PJQ4439EP_R2_00201

PJQ4439EP_R2_00201

30V P-CHANNEL STANDARD TRENCH MO

Panjit International Inc.

5,000 -
PJQ4439EP_R2_00201

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJQ4530P_R2_00201

PJQ4530P_R2_00201

30V N-CHANNEL (LL) SGT MOSFET

Panjit International Inc.

5,000 -
PJQ4530P_R2_00201

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJQ5534_R2_00201

PJQ5534_R2_00201

30V N-CHANNEL (LL) SGT MOSFET

Panjit International Inc.

3,000 -
PJQ5534_R2_00201

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
FDD6N25TM

FDD6N25TM

MOSFET N-CH 250V 4.4A DPAK

onsemi

5,079 -
FDD6N25TM

数据表

UniFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.4A (Tc) 10V 1.1Ohm @ 2.2A, 10V Surface Mount 5V @ 250µA 6 nC @ 10 V 250 V ±30V 250 pF @ 25 V - - TO-252AA - 50W (Tc) -55°C ~ 150°C (TJ)
BSC090N03MSGATMA1

BSC090N03MSGATMA1

MOSFET N-CH 30V 12A/48A 8TDSON

Infineon Technologies

2,027 -
BSC090N03MSGATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12A (Ta), 48A (Tc) 4.5V, 10V 9mOhm @ 30A, 10V Surface Mount 2V @ 250µA 24 nC @ 10 V 30 V ±20V 1900 pF @ 15 V - - PG-TDSON-8-5 - 2.5W (Ta), 32W (Tc) -55°C ~ 150°C (TJ)
FDY100PZ

FDY100PZ

MOSFET P-CH 20V 350MA SC89-3

onsemi

8,901 -
FDY100PZ

数据表

PowerTrench® SC-89, SOT-490 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 350mA (Ta) 1.8V, 4.5V 1.2Ohm @ 350mA, 4.5V Surface Mount 1.5V @ 250µA 1.4 nC @ 4.5 V 20 V ±8V 100 pF @ 10 V - - SC-89-3 - 625mW (Ta) -55°C ~ 150°C (TJ)
SIA408DJ-T1-GE3

SIA408DJ-T1-GE3

MOSFET N-CH 30V 4.5A PPAK SC70-6

Vishay Siliconix

4,424 -
SIA408DJ-T1-GE3

数据表

TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Tc) 2.5V, 10V 36mOhm @ 5.3A, 10V Surface Mount 1.6V @ 250µA 24 nC @ 10 V 30 V ±12V 830 pF @ 15 V - - PowerPAK® SC-70-6 - 3.4W (Ta), 17.9W (Tc) -55°C ~ 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户