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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFI730GPBF

IRFI730GPBF

MOSFET N-CH 400V 3.7A TO220-3

Vishay Siliconix

1,105 -
IRFI730GPBF

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Active N-Channel MOSFET (Metal Oxide) 3.7A (Tc) 10V 1Ohm @ 2.1A, 10V Through Hole 4V @ 250µA 38 nC @ 10 V 400 V ±20V 700 pF @ 25 V - - TO-220-3 - 35W (Tc) -55°C ~ 150°C (TJ)
R6013VNXC7G

R6013VNXC7G

600V 8A TO-220FM, PRESTOMOS WITH

Rohm Semiconductor

1,080 -
R6013VNXC7G

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V, 15V 300mOhm @ 3A, 15V Through Hole 6.5V @ 500µA 21 nC @ 10 V 600 V ±30V 900 pF @ 100 V - - TO-220FM - 54W (Tc) 150°C (TJ)
AOB360A70L

AOB360A70L

MOSFET N-CH 700V 12A TO263

Alpha & Omega Semiconductor Inc.

840 -
AOB360A70L

数据表

aMOS5™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 10V 360mOhm @ 6A, 10V Surface Mount 4V @ 250µA 22.5 nC @ 10 V 700 V ±20V 1360 pF @ 100 V - - TO-263 (D2PAK) - 156W (Tc) -55°C ~ 150°C (TJ)
XPH4R10ANB,L1XHQ

XPH4R10ANB,L1XHQ

MOSFET N-CH 100V 70A 8SOP

Toshiba Semiconductor and Storage

34,035 -
XPH4R10ANB,L1XHQ

数据表

U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 70A (Ta) 6V, 10V 4.1mOhm @ 35A, 10V Surface Mount 3.5V @ 1mA 75 nC @ 10 V 100 V ±20V 4970 pF @ 10 V - - 8-SOP Advance (5x5) - 960mW (Ta), 170W (Tc) 175°C
CMS23N06H8-HF

CMS23N06H8-HF

MOSFET N-CH 60V 23A/125A 8DFN

Comchip Technology

4,998 -
CMS23N06H8-HF

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 23A (Ta), 125A (Tc) 4.5V, 10V 3.1mOhm @ 20A, 10V Surface Mount 2.5V @ 250µA 64 nC @ 10 V 60 V ±20V 3467 pF @ 25 V - - 8-DFN (5x6) - 86W (Tc) -55°C ~ 150°C (TJ)
BUK9Y8R8-60ELX

BUK9Y8R8-60ELX

SINGLE N-CHANNEL 60 V, 5.6 MOHM

Nexperia USA Inc.

2,635 -
BUK9Y8R8-60ELX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 110A (Tc) 4.5V, 10V 5.6mOhm @ 25A, 10V Surface Mount 2.1V @ 1mA 123 nC @ 10 V 60 V ±10V 6695 pF @ 25 V AEC-Q101 - LFPAK56, Power-SO8 Automotive 194W (Tc) -55°C ~ 175°C (TJ)
RJK0655DPB-00#J5

RJK0655DPB-00#J5

MOSFET N-CH 60V 35A LFPAK

Renesas Electronics Corporation

2,500 -
RJK0655DPB-00#J5

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Ta) 10V 6.7mOhm @ 17.5A, 10V Surface Mount - 35 nC @ 10 V 60 V ±20V 2550 pF @ 10 V - - LFPAK - 60W (Tc) 150°C (TJ)
FQP1N50

FQP1N50

MOSFET N-CH 500V 1.4A TO220-3

onsemi

6,456 -
FQP1N50

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.4A (Tc) 10V 9Ohm @ 700mA, 10V Through Hole 5V @ 250µA 5.5 nC @ 10 V 500 V ±30V 150 pF @ 25 V - - TO-220-3 - 40W (Tc) -55°C ~ 150°C (TJ)
FQP2N40

FQP2N40

MOSFET N-CH 400V 1.8A TO220-3

onsemi

5,878 -
FQP2N40

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.8A (Tc) 10V 5.8Ohm @ 900mA, 10V Through Hole 5V @ 250µA 5.5 nC @ 10 V 400 V ±30V 150 pF @ 25 V - - TO-220-3 - 40W (Tc) -55°C ~ 150°C (TJ)
FQPF2N60

FQPF2N60

MOSFET N-CH 600V 1.6A TO220F

onsemi

8,023 -
FQPF2N60

数据表

QFET® TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 1.6A (Tc) 10V 4.7Ohm @ 800mA, 10V Through Hole 5V @ 250µA 11 nC @ 10 V 600 V ±30V 350 pF @ 25 V - - TO-220F-3 - 28W (Tc) -55°C ~ 150°C (TJ)
FQB8N25TM

FQB8N25TM

MOSFET N-CH 250V 8A D2PAK

onsemi

4,483 -
FQB8N25TM

数据表

QFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 550mOhm @ 4A, 10V Surface Mount 5V @ 250µA 15 nC @ 10 V 250 V ±30V 530 pF @ 25 V - - TO-263 (D2PAK) - 3.13W (Ta), 87W (Tc) -55°C ~ 150°C (TJ)
DMT10H009LSSQ-13

DMT10H009LSSQ-13

MOSFET BVDSS: 61V~100V SO-8 T&R

Diodes Incorporated

4,345 -
DMT10H009LSSQ-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 13A (Ta), 48A (Tc) 4.5V, 10V 9mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 40.2 nC @ 10 V 100 V ±20V 2309 pF @ 50 V AEC-Q101 - 8-SO Automotive 1.8W (Ta) -55°C ~ 150°C (TJ)
STD80N6F7

STD80N6F7

MOSFET N-CH 60V 40A DPAK

STMicroelectronics

6,275 -
STD80N6F7

数据表

STripFET™ F7 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40A (Tc) 10V 8mOhm @ 20A, 10V Surface Mount 4V @ 250µA 25 nC @ 10 V 60 V ±20V 1600 pF @ 30 V - - TO-252 (DPAK) - 100W (Tc) -55°C ~ 175°C (TJ)
AONS36312

AONS36312

N

Alpha & Omega Semiconductor Inc.

8,340 -
AONS36312

数据表

- 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 42.5A (Ta), 85A (Tc) 4.5V, 10V 2.1mOhm @ 20A, 10V Surface Mount 1.9V @ 250µA 60 nC @ 10 V 30 V ±12V 2500 pF @ 15 V - - 8-DFN (5x6) - 6.2W (Ta), 48W (Tc) -55°C ~ 150°C (TJ)
DMT31M7LSS-13

DMT31M7LSS-13

MOSFET BVDSS: 25V~30V SO-8 T&R 2

Diodes Incorporated

4,878 -
DMT31M7LSS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 25A (Ta), 78A (Tc) 4.5V, 10V 2.7mOhm @ 20A, 10V Surface Mount 3V @ 250µA 84 nC @ 10 V 30 V ±20V 5492 pF @ 15 V - - 8-SO - 1.7W (Ta), 5.9W (Tc) -55°C ~ 150°C (TJ)
DMP4009SPSW-13

DMP4009SPSW-13

MOSFET BVDSS: 31V~40V POWERDI506

Diodes Incorporated

5,370 -
DMP4009SPSW-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 79A (Tc) 4.5V, 10V 11mOhm @ 9.8A, 10V Surface Mount, Wettable Flank 2.5V @ 250µA 112 nC @ 10 V 40 V ±20V 5697 pF @ 20 V - - PowerDI5060-8 (Type UX) - 3.9W (Ta), 119W (Tc) -55°C ~ 150°C (TJ)
XP6NA6R3MT

XP6NA6R3MT

MOSFET N CH 60V 21.6A PMPAK5X6

YAGEO XSEMI

2,217 -
XP6NA6R3MT

数据表

XP6NA6R3 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 21.6A (Ta), 68A (Tc) 6V, 10V 6.3mOhm @ 20A, 10V Surface Mount 4V @ 250µA 56 nC @ 10 V 60 V ±20V 2960 pF @ 50 V - - 8-PMPAK (5x6) - 5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
XP6NA6R0CMT-L

XP6NA6R0CMT-L

MOSFET N CH 60V 21.7A PMPAK5X6L

YAGEO XSEMI

8,977 -
XP6NA6R0CMT-L

数据表

XP6NA6R0C 8-PowerLDFN Tube Active N-Channel MOSFET (Metal Oxide) 21.7A (Ta), 68A (Tc) 6V, 10V 6mOhm @ 20A, 10V Surface Mount 3.6V @ 250µA 56 nC @ 10 V 60 V ±20V 2960 pF @ 50 V - - 8-PMPAK (5x6) - 5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ)
IPU78CN10N G

IPU78CN10N G

MOSFET N-CH 100V 13A TO251-3

Infineon Technologies

4,231 -
IPU78CN10N G

数据表

OptiMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 13A (Tc) 10V 78mOhm @ 13A, 10V Through Hole 4V @ 12µA 11 nC @ 10 V 100 V ±20V 716 pF @ 50 V - - PG-TO251-3 - 31W (Tc) -55°C ~ 175°C (TJ)
RP1L055SNTR

RP1L055SNTR

MOSFET N-CH 60V 5.5A MPT6

Rohm Semiconductor

8,226 -
RP1L055SNTR

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Ta) 4V, 10V 49mOhm @ 5.5A, 10V Surface Mount 3V @ 1mA 14 nC @ 10 V 60 V ±20V 730 pF @ 10 V - - MPT6 - 2W (Ta) 150°C (TJ)
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