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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
PSMN020-150W,127

PSMN020-150W,127

MOSFET N-CH 150V 73A TO247-3

NXP USA Inc.

3,597 -
PSMN020-150W,127

数据表

TrenchMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 73A (Tc) 10V 20mOhm @ 25A, 10V Through Hole 4V @ 1mA 227 nC @ 10 V 150 V ±20V 9537 pF @ 25 V - - TO-247 - 300W (Tc) -55°C ~ 175°C (TJ)
PSMN040-200W,127

PSMN040-200W,127

MOSFET N-CH 200V 50A TO247-3

NXP USA Inc.

9,777 -
PSMN040-200W,127

数据表

TrenchMOS™ TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 40mOhm @ 25A, 10V Through Hole 4V @ 1mA 183 nC @ 10 V 200 V ±20V 9530 pF @ 25 V - - TO-247 - 300W (Tc) -55°C ~ 175°C (TJ)
SI2302DS,215

SI2302DS,215

MOSFET N-CH 20V 2.5A TO236AB

NXP USA Inc.

2,296 -
SI2302DS,215

数据表

TrenchMOS™ TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 2.5V, 4.5V 85mOhm @ 3.6A, 4.5V Surface Mount 650mV @ 1mA (Min) 10 nC @ 4.5 V 20 V ±8V 230 pF @ 10 V - - SOT-23 (TO-236AB) - 830mW (Tc) -65°C ~ 150°C (TJ)
SI4410DY,518

SI4410DY,518

MOSFET N-CH 30V 8SO

NXP USA Inc.

6,413 -
SI4410DY,518

数据表

TrenchMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 10A (Tj) 4.5V, 10V 13.5mOhm @ 10A, 10V Surface Mount 1V @ 250µA 34 nC @ 5 V 30 V ±20V - - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
SI4420DY,518

SI4420DY,518

MOSFET N-CH 30V SOT96-1

NXP USA Inc.

7,178 -
SI4420DY,518

数据表

TrenchMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 12.5A (Tj) 4.5V, 10V 9mOhm @ 12.5A, 10V Surface Mount 1V @ 250µA 120 nC @ 10 V 30 V ±20V - - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
SI4800,518

SI4800,518

MOSFET N-CH 30V 9A 8SO

NXP USA Inc.

6,652 -
SI4800,518

数据表

TrenchMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Ta) 4.5V, 10V 18.5mOhm @ 9A, 10V Surface Mount 800mV @ 250µA 11.8 nC @ 5 V 30 V ±20V - - - 8-SO - 2.5W (Ta) -55°C ~ 150°C (TJ)
BUK7524-55A,127

BUK7524-55A,127

MOSFET N-CH 55V 47A TO220AB

NXP USA Inc.

8,350 -
BUK7524-55A,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 24mOhm @ 25A, 10V Through Hole 4V @ 1mA - 55 V ±20V 1310 pF @ 25 V - - TO-220AB - 106W (Tc) -55°C ~ 175°C (TJ)
BUK752R7-30B,127

BUK752R7-30B,127

MOSFET N-CH 30V 75A TO220AB

NXP USA Inc.

7,991 -
BUK752R7-30B,127

数据表

TrenchMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 2.7mOhm @ 25A, 10V Through Hole 4V @ 1mA 91 nC @ 10 V 30 V ±20V 6212 pF @ 25 V - - TO-220AB - 300W (Tc) -55°C ~ 175°C (TJ)
BUK7624-55A,118

BUK7624-55A,118

MOSFET N-CH 55V 47A D2PAK

NXP USA Inc.

4,537 -
BUK7624-55A,118

数据表

TrenchMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 24mOhm @ 25A, 10V Surface Mount 4V @ 1mA - 55 V ±20V 1310 pF @ 25 V AEC-Q101 - D2PAK Automotive 106W (Tc) -55°C ~ 175°C (TJ)
BUK794R1-40BT,127

BUK794R1-40BT,127

MOSFET N-CH 40V 75A TO220-5

NXP USA Inc.

2,414 -
BUK794R1-40BT,127

数据表

TrenchPLUS TO-220-5 Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 4.1mOhm @ 50A, 10V Through Hole 4V @ 1mA 83 nC @ 10 V 40 V ±20V 6808 pF @ 25 V - Temperature Sensing Diode TO-220-5 - 272W (Tc) -55°C ~ 175°C (TJ)
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