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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DMP1010UCA4-7

DMP1010UCA4-7

MOSFET BVDSS: 8V~24V X2-DSN1212-

Diodes Incorporated

2,697 -
DMP1010UCA4-7

数据表

- 4-SMD, No Lead Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6A (Ta) 1.5V, 4.5V 9.9mOhm @ 1A, 4.5V Surface Mount 1.05V @ 250µA 7 nC @ 4.5 V 8 V -6V 699 pF @ 4 V - - X2-DSN1212-4 - 630mW (Ta) -55°C ~ 150°C (TJ)
DMP4065SQ-13

DMP4065SQ-13

MOSFET P-CH 40V 2.4A SOT23 T&R

Diodes Incorporated

9,676 -
DMP4065SQ-13

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2.4A (Ta) 4.5V, 10V 80mOhm @ 4.2A, 10V Surface Mount 3V @ 250µA 12.2 nC @ 10 V 40 V ±20V 587 pF @ 20 V - - SOT-23-3 - 720mW (Ta) -55°C ~ 150°C (TJ)
IRFNL210BTA-FP001

IRFNL210BTA-FP001

MOSFET N-CH 200V 1A TO92L

onsemi

6,289 -
IRFNL210BTA-FP001

数据表

- TO-226-3, TO-92-3 Long Body Tape & Box (TB) Obsolete N-Channel MOSFET (Metal Oxide) 1A (Tc) 10V 1.5Ohm @ 500mA, 10V Through Hole 4V @ 250µA 9.3 nC @ 10 V 200 V ±30V 225 pF @ 25 V - - TO-92L - 3.1W (Ta) -55°C ~ 150°C (TJ)
PJW1NA60_R2_00001

PJW1NA60_R2_00001

600V N-CHANNEL MOSFET

Panjit International Inc.

8,420 -
PJW1NA60_R2_00001

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 300mA (Ta) 10V 14Ohm @ 500mA, 10V Surface Mount 4V @ 250µA 3.3 nC @ 10 V 600 V ±30V 95 pF @ 25 V - - SOT-223 - 3.3W (Tc) -55°C ~ 150°C (TJ)
BS170FTC

BS170FTC

MOSFET N-CH 60V 150UA SOT23-3

Diodes Incorporated

5,232 -
BS170FTC

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 150µA (Ta) 10V 5Ohm @ 200mA, 10V Surface Mount 3V @ 1mA - 60 V ±20V 60 pF @ 10 V - - SOT-23-3 - 330mW (Ta) -55°C ~ 150°C (TJ)
ZXM41N10FTC

ZXM41N10FTC

MOSFET N-CH 100V 170MA SOT23-3

Diodes Incorporated

6,901 -
ZXM41N10FTC

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 170mA (Ta) 3V, 4.5V 8Ohm @ 150mA, 4.5V Surface Mount 1.5V @ 1mA - 100 V ±40V 25 pF @ 25 V - - SOT-23-3 - 360mW (Ta) -
DMN14M8UFDF-13

DMN14M8UFDF-13

MOSFET BVDSS: 8V~24V U-DFN2020-6

Diodes Incorporated

8,810 -
DMN14M8UFDF-13

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14.7A (Ta) 2.5V, 4.5V 6mOhm @ 12A, 4.5V Surface Mount 1.2V @ 250µA 29.5 nC @ 10 V 12 V ±8V 1246 pF @ 6 V - - U-DFN2020-6 (Type F) - 1.1W (Ta) -55°C ~ 150°C (TJ)
IPB65R225C7ATMA1

IPB65R225C7ATMA1

MOSFET N-CH 650V 11A D2PAK

Infineon Technologies

5,619 -
IPB65R225C7ATMA1

数据表

CoolMOS™ C7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 11A (Tc) 10V 225mOhm @ 4.8A, 10V Surface Mount 4V @ 240µA 20 nC @ 10 V 650 V ±20V 996 pF @ 400 V - - PG-TO263-3 - 63W (Tc) -55°C ~ 150°C (TJ)
IRFS7434-7PPBF

IRFS7434-7PPBF

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies

4,115 -
IRFS7434-7PPBF

数据表

HEXFET®, StrongIRFET™ TO-263-7, D2PAK (6 Leads + Tab) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 240A (Tc) 6V, 10V 1mOhm @ 100A, 10V Surface Mount 3.9V @ 250µA 315 nC @ 10 V 40 V ±20V 10250 pF @ 25 V - - D2PAK (7-Lead) - 245W (Tc) -55°C ~ 150°C (TJ)
IRFR7446PBF

IRFR7446PBF

MOSFET N-CH 40V 56A TO252

Infineon Technologies

9,720 -
IRFR7446PBF

数据表

HEXFET®, StrongIRFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 56A (Tc) 6V, 10V 3.9mOhm @ 56A, 10V Surface Mount 3.9V @ 100µA 130 nC @ 10 V 40 V ±20V 3150 pF @ 25 V - - TO-252AA (DPAK) - 98W (Tc) -55°C ~ 175°C (TJ)
PSMN3R9-60XSQ

PSMN3R9-60XSQ

MOSFET N-CH 60V 75A TO220F

NXP USA Inc.

2,255 -
PSMN3R9-60XSQ

数据表

- TO-220-3 Full Pack, Isolated Tab Tube Obsolete N-Channel MOSFET (Metal Oxide) 75A (Tc) 10V 4mOhm @ 25A, 10V Through Hole 4V @ 1mA 103 nC @ 10 V 60 V ±20V 5494 pF @ 25 V - - TO-220F - 55W (Tc) -55°C ~ 175°C (TJ)
UPA2600T1R-E2-AX

UPA2600T1R-E2-AX

MOSFET N-CH 20V 7A 6HUSON

Renesas Electronics Corporation

4,118 -
UPA2600T1R-E2-AX

数据表

- 6-WFDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7A (Ta) 2.5V, 4.5V 19.1mOhm @ 3.5A, 2.5V Surface Mount - 7.9 nC @ 10 V 20 V ±12V 870 pF @ 10 V - - 6-HUSON (2x2) - 2.4W (Ta) 150°C (TJ)
UPA2630T1R-E2-AX

UPA2630T1R-E2-AX

MOSFET P-CH 12V 7A 6HUSON

Renesas Electronics Corporation

3,822 -
UPA2630T1R-E2-AX

数据表

- 6-WFDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 7A (Ta) 1.8V, 4.5V 59mOhm @ 3.5A, 1.8V Surface Mount - 11.3 nC @ 4.5 V 12 V ±8V 1260 pF @ 10 V - - 6-HUSON (2x2) - 2.5W (Ta) 150°C (TJ)
UPA2631T1R-E2-AX

UPA2631T1R-E2-AX

MOSFET P-CH 20V 6A 6HUSON

Renesas Electronics Corporation

4,757 -
UPA2631T1R-E2-AX

数据表

- 6-WFDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 6A (Ta) 1.8V, 4.5V 62mOhm @ 3A, 1.8V Surface Mount - 12.5 nC @ 4.5 V 20 V ±8V 1240 pF @ 10 V - - 6-HUSON (2x2) - 2.5W (Ta) 150°C (TJ)
RQJ0303PGDQA#H6

RQJ0303PGDQA#H6

MOSFET P-CH 30V 3.3A 3MPAK

Renesas Electronics Corporation

2,321 -
RQJ0303PGDQA#H6

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 3.3A (Ta) 4.5V, 10V 68mOhm @ 1.6A, 10V Surface Mount - 12 nC @ 10 V 30 V +10V, -20V 625 pF @ 10 V - - 3-MPAK - 800mW (Ta) 150°C (TJ)
UPA2739T1A-E2-AY

UPA2739T1A-E2-AY

MOSFET P-CH 30V 85A 8HVSON

Renesas Electronics Corporation

3,333 -
UPA2739T1A-E2-AY

数据表

- 8-PowerVDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 85A (Ta) 4.5V, 10V 5.7mOhm @ 23A, 4.5V Surface Mount - 153 nC @ 10 V 30 V ±20V 6050 pF @ 10 V - - 8-HVSON (5x5.4) - 1.5W (Ta) 150°C (TJ)
UPA2765T1A-E2-AY

UPA2765T1A-E2-AY

MOSFET N-CH 30V 100A 8HVSON

Renesas Electronics Corporation

7,705 -
UPA2765T1A-E2-AY

数据表

- 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 100A (Ta) 4.5V, 10V 2.9mOhm @ 32A, 4.5V Surface Mount - 152 nC @ 10 V 30 V ±20V 6550 pF @ 10 V - - 8-HVSON (5x5.4) - 1.5W (Ta), 83W (Tc) 150°C (TJ)
UPA2764T1A-E2-AY

UPA2764T1A-E2-AY

MOSFET N-CH 30V 130A 8HVSON

Renesas Electronics Corporation

2,526 -
UPA2764T1A-E2-AY

数据表

- 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 130A (Ta) 4.5V, 10V 2.45mOhm @ 35A, 4.5V Surface Mount - 180 nC @ 10 V 30 V ±20V 7930 pF @ 10 V - - 8-HVSON (5x5.4) - 1.5W (Ta), 83W (Tc) 150°C (TJ)
UPA2766T1A-E1-AY

UPA2766T1A-E1-AY

MOSFET N-CH 30V 130A 8HVSON

Renesas Electronics Corporation

3,514 -
UPA2766T1A-E1-AY

数据表

- 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 130A (Ta) 4.5V, 10V 1.82mOhm @ 39A, 4.5V Surface Mount - 257 nC @ 10 V 30 V ±20V 10850 pF @ 10 V - - 8-HVSON (5x5.4) - 1.5W (Ta), 83W (Tc) 150°C (TJ)
FCPF190N60E-F152

FCPF190N60E-F152

MOSFET N-CH 600V TO-220-3

onsemi

7,994 -
FCPF190N60E-F152

数据表

SuperFET® II TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 20.6A (Tc) - 190mOhm @ 10A, 10V Through Hole 3.5V @ 250µA 82 nC @ 10 V 600 V - 3175 pF @ 25 V - - TO-220F-3 - 39W (Tc) -55°C ~ 150°C (TJ)
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