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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI8805EDB-T2-E1

SI8805EDB-T2-E1

MOSFET P-CH 8V 4MICROFOOT

Vishay Siliconix

8,402 -
SI8805EDB-T2-E1

数据表

TrenchFET® 4-XFBGA, CSPBGA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.2A (Ta) 1.2V, 4.5V 68mOhm @ 1.5A, 4.5V Surface Mount 700mV @ 250µA 10 nC @ 4.5 V 8 V ±5V - - - 4-Microfoot - 500mW (Ta) -55°C ~ 150°C (TJ)
SI8809EDB-T2-E1

SI8809EDB-T2-E1

MOSFET P-CH 20V 1.9A MICROFOOT

Vishay Siliconix

4,764 -
SI8809EDB-T2-E1

数据表

TrenchFET® 4-XFBGA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 1.94 (Ta) 1.8V, 4.5V 90mOhm @ 1.5A, 4.5V Surface Mount 900mV @ 250µA 15 nC @ 8 V 20 V ±8V - - - 4-Microfoot - 500mW (Ta) -55°C ~ 150°C (TJ)
SIB404DK-T1-GE3

SIB404DK-T1-GE3

MOSFET N-CH 12V 9A PPAK SC75-6

Vishay Siliconix

4,617 -
SIB404DK-T1-GE3

数据表

TrenchFET® PowerPAK® SC-75-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 9A (Tc) 4.5V 19mOhm @ 3A, 4.5V Surface Mount 800mV @ 250µA 15 nC @ 4.5 V 12 V ±5V - - - PowerPAK® SC-75-6 - 2.5W (Ta), 13W (Tc) -55°C ~ 150°C (TJ)
SIB437EDKT-T1-GE3

SIB437EDKT-T1-GE3

MOSFET P-CH 8V 9A PPAK TSC75-6

Vishay Siliconix

6,792 -
SIB437EDKT-T1-GE3

数据表

TrenchFET® PowerPAK® TSC-75-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 9A (Tc) 1.2V, 4.5V 34mOhm @ 3A, 4.5V Surface Mount 700mV @ 250µA 16 nC @ 4.5 V 8 V ±5V - - - PowerPAK® TSC75-6 - 2.4W (Ta), 13W (Tc) -55°C ~ 150°C (TJ)
SIR814DP-T1-GE3

SIR814DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix

2,110 -
SIR814DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60A (Tc) 4.5V, 10V 2.1mOhm @ 20A, 10V Surface Mount 2.3V @ 250µA 86 nC @ 10 V 40 V ±20V 3800 pF @ 20 V - - PowerPAK® SO-8 - 6.25W (Ta), 104W (Tc) -55°C ~ 150°C (TJ)
SIS776DN-T1-GE3

SIS776DN-T1-GE3

MOSFET N-CH 30V 35A PPAK1212-8

Vishay Siliconix

4,175 -
SIS776DN-T1-GE3

数据表

SkyFET®, TrenchFET® PowerPAK® 1212-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 4.5V, 10V 6.2mOhm @ 10A, 10V Surface Mount 2.5V @ 250µA 36 nC @ 10 V 30 V ±20V 1360 pF @ 15 V - Schottky Diode (Body) PowerPAK® 1212-8 - 3.8W (Ta), 52W (Tc) -50°C ~ 150°C (TJ)
SQM120N03-1M5L_GE3

SQM120N03-1M5L_GE3

MOSFET N-CH 30V 120A TO263

Vishay Siliconix

4,546 -
SQM120N03-1M5L_GE3

数据表

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 120A (Tc) 4.5V, 10V 1.5mOhm @ 30A, 10V Surface Mount 2.5V @ 250µA 270 nC @ 10 V 30 V ±20V 15605 pF @ 15 V - - TO-263 - 375W (Tc) -55°C ~ 175°C (TJ)
SQM50N04-4M1_GE3

SQM50N04-4M1_GE3

MOSFET N-CH 40V 50A TO263

Vishay Siliconix

8,206 -
SQM50N04-4M1_GE3

数据表

TrenchFET® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50A (Tc) 10V 4.1mOhm @ 30A, 10V Surface Mount 3.5V @ 250µA 105 nC @ 10 V 40 V ±20V 6715 pF @ 25 V - - TO-263 (D2PAK) - 150W (Tc) -55°C ~ 175°C (TJ)
AUIRFP4409

AUIRFP4409

MOSFET N-CH 300V 38A TO247AC

Infineon Technologies

9,392 -
AUIRFP4409

数据表

HEXFET® TO-247-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 38A (Tc) 10V 69mOhm @ 24A, 10V Through Hole 5V @ 250µA 125 nC @ 10 V 300 V ±20V 5168 pF @ 50 V - - TO-247AC - 341W (Tc) -55°C ~ 175°C (TJ)
DMT3020LFCL-7

DMT3020LFCL-7

MOSFET N-CH 30V 7.6A 6UDFN

Diodes Incorporated

5,456 -
DMT3020LFCL-7

数据表

- 6-UFDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 7.6A (Ta) 4.5V, 10V 20mOhm @ 9A, 10V Surface Mount 3V @ 250µA 7 nC @ 10 V 30 V ±20V 393 pF @ 15 V AEC-Q101 - U-DFN1616-6 Automotive 1.7W (Ta) -55°C ~ 150°C (TJ)
MCG18N06HE3-TP

MCG18N06HE3-TP

MOSFET

Micro Commercial Co

6,384 -
MCG18N06HE3-TP

数据表

- 8-VDFN Exposed Pad Tape & Reel (TR) Last Time Buy N-Channel MOSFET (Metal Oxide) 18A (Tc) 4.5V, 10V 30mOhm @ 15A, 10V Surface Mount 2.5V @ 250µA 23 nC @ 10 V 60 V ±20V 1200 pF @ 25 V AEC-Q101 - DFN3333 Automotive 19.8W (Tj) -55°C ~ 150°C (TJ)
DMN4060SVTQ-7

DMN4060SVTQ-7

MOSFET BVDSS: 31V~40V TSOT26 T&R

Diodes Incorporated

5,555 -
DMN4060SVTQ-7

数据表

- SOT-23-6 Thin, TSOT-23-6 Bulk Active N-Channel MOSFET (Metal Oxide) 4.3A (Ta) 4.5V, 10V 46mOhm @ 4.3A, 10V Surface Mount 3V @ 250µA 20 nC @ 10 V 45 V ±20V 1159 pF @ 25 V AEC-Q101 - TSOT-26 Automotive 1.2W (Ta) -55°C ~ 150°C (TJ)
MCH3484-TL-H

MCH3484-TL-H

MOSFET N-CH 20V 4.5A SC70

onsemi

6,621 -
MCH3484-TL-H

数据表

- 3-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.5A (Ta) 0.9V, 2.5V 40mOhm @ 2A, 2.5V Surface Mount 800mV @ 1mA 11 nC @ 2.5 V 20 V ±5V 630 pF @ 10 V - - SC-70FL/MCPH3 - 1W (Ta) 150°C (TJ)
DMN1004UFDF-13

DMN1004UFDF-13

MOSFET N-CH 12V 15A 6UDFN

Diodes Incorporated

6,443 -
DMN1004UFDF-13

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 15A (Ta) 2.5V, 4.5V 4.8mOhm @ 15A, 4.5V Surface Mount 1V @ 250µA 47 nC @ 10 V 12 V ±8V 2385 pF @ 6 V - - U-DFN2020-6 - 2.1W (Ta) -55°C ~ 150°C (TJ)
BUK6D120-60PZ

BUK6D120-60PZ

BUK6D120-60P/SOT1220/SOT1220

Nexperia USA Inc.

2,352 -
BUK6D120-60PZ

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 3A (Ta), 8A (Tc) 4.5V, 10V 120mOhm @ 3A, 10V Surface Mount 3.2V @ 250µA 18 nC @ 10 V 60 V ±20V 724 pF @ 30 V AEC-Q101 - DFN2020MD-6 Automotive 2.3W (Ta), 15W (Tc) -55°C ~ 175°C (TJ)
DMN3115UDM-7

DMN3115UDM-7

MOSFET N-CH 30V 3.2A SOT-26

Diodes Incorporated

6,430 -
DMN3115UDM-7

数据表

- SOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.2A (Ta) 1.5V, 4.5V 60mOhm @ 6A, 4.5V Surface Mount 1V @ 250µA - 30 V ±8V 476 pF @ 15 V - - SOT-26 - 900mW (Ta) -55°C ~ 150°C (TJ)
BSS126L6327HTSA1

BSS126L6327HTSA1

MOSFET N-CH 600V 21MA SOT23-3

Infineon Technologies

7,097 -
BSS126L6327HTSA1

数据表

SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel, Depletion Mode MOSFET (Metal Oxide) 21mA (Ta) 0V, 10V 500Ohm @ 16mA, 10V Surface Mount 2.7V @ 8µA 2.1 nC @ 5 V 600 V ±20V 28 pF @ 25 V - - PG-SOT23 - 500mW (Ta) -55°C ~ 150°C (TJ)
PJD1NA60B_L2_00001

PJD1NA60B_L2_00001

600V N-CHANNEL MOSFET

Panjit International Inc.

6,194 -
PJD1NA60B_L2_00001

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1A (Ta) 10V 10Ohm @ 500mA, 10V Surface Mount 3.5V @ 250µA 6.1 nC @ 10 V 600 V ±30V 210 pF @ 25 V - - TO-252AA - 28W (Tc) -55°C ~ 150°C (TJ)
DMN29M9UFDF-7

DMN29M9UFDF-7

MOSFET BVDSS: 25V~30V U-DFN2020-

Diodes Incorporated

7,680 -
DMN29M9UFDF-7

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 11A (Ta) 1.8V, 4.5V 13.5mOhm @ 5A, 4.5V Surface Mount 1.2V @ 250µA 14.6 nC @ 10 V 20 V ±12V 655 pF @ 8 V - - U-DFN2020-6 (Type F) - 1.2W (Ta) -55°C ~ 150°C (TJ)
DMN3030LFG-7

DMN3030LFG-7

MOSFET N-CH 30V 5.3A PWRDI3333-8

Diodes Incorporated

9,818 -
DMN3030LFG-7

数据表

- 8-PowerVDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 5.3A (Ta) 4.5V, 10V 18mOhm @ 10A, 10V Surface Mount 2.1V @ 250µA 17.4 nC @ 10 V 30 V ±25V 751 pF @ 10 V - - POWERDI3333-8 - 900mW (Ta) -55°C ~ 150°C (TJ)
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