富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
SI3456CDV-T1-E3

SI3456CDV-T1-E3

MOSFET N-CH 30V 7.7A 6TSOP

Vishay Siliconix

3,004 -
SI3456CDV-T1-E3

数据表

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.7A (Tc) 4.5V, 10V 34mOhm @ 6.1A, 10V Surface Mount 3V @ 250µA 12 nC @ 10 V 30 V ±20V 460 pF @ 15 V - - 6-TSOP - 2W (Ta), 3.3W (Tc) -55°C ~ 150°C (TJ)
SI3456CDV-T1-GE3

SI3456CDV-T1-GE3

MOSFET N-CH 30V 7.7A 6TSOP

Vishay Siliconix

4,635 -
SI3456CDV-T1-GE3

数据表

TrenchFET® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 7.7A (Tc) 4.5V, 10V 34mOhm @ 6.1A, 10V Surface Mount 3V @ 250µA 12 nC @ 10 V 30 V ±20V 460 pF @ 15 V - - 6-TSOP - 2W (Ta), 3.3W (Tc) -55°C ~ 150°C (TJ)
2N6796

2N6796

MOSFET N-CH 100V 8A TO39

Microsemi Corporation

8,086 -
2N6796

数据表

- TO-205AF Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 180mOhm @ 5A, 10V Through Hole 4V @ 250mA 6.34 nC @ 10 V 100 V ±20V - - - TO-39 - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
2N6796U

2N6796U

MOSFET N-CH 100V 8A 18ULCC

Microsemi Corporation

3,800 -
2N6796U

数据表

- 18-CLCC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 8A (Tc) 10V 180mOhm @ 5A, 10V Surface Mount 4V @ 250mA 6.34 nC @ 10 V 100 V ±20V - - - 18-ULCC (9.14x7.49) - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
2N6798

2N6798

MOSFET N-CH 200V 5.5A TO39

Microsemi Corporation

8,741 -
2N6798

数据表

- TO-205AF Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 5.5A (Tc) 10V 400mOhm @ 3.5A, 10V Through Hole 4V @ 250µA 5.29 nC @ 10 V 200 V ±20V - - - TO-39 - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
2N6800

2N6800

MOSFET N-CH 400V 3A TO39

Microsemi Corporation

6,307 -
2N6800

数据表

- TO-205AF Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 1Ohm @ 2A, 10V Through Hole 4V @ 250µA 5.75 nC @ 10 V 400 V ±20V - - - TO-39 - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
2N6800U

2N6800U

MOSFET N-CH 400V 3A 18ULCC

Microsemi Corporation

3,313 -
2N6800U

数据表

- 18-CLCC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 3A (Tc) 10V 1Ohm @ 2A, 10V Surface Mount 4V @ 250µA 5.75 nC @ 10 V 400 V ±20V - - - 18-ULCC (9.14x7.49) - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
2N6802

2N6802

MOSFET N-CH 500V 2.5A TO39

Microsemi Corporation

3,642 -
2N6802

数据表

- TO-205AD, TO-39-3 Metal Can Bulk Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V Through Hole 4V @ 250µA 4.46 nC @ 10 V 500 V ±20V - - - TO-39 (TO-205AD) - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
2N6802U

2N6802U

MOSFET N-CH 500V 2.5A 18ULCC

Microsemi Corporation

6,273 -
2N6802U

数据表

- 18-CLCC Bulk Obsolete N-Channel MOSFET (Metal Oxide) 2.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V Surface Mount 4V @ 250µA 4.46 nC @ 10 V 500 V ±20V - - - 18-ULCC (9.14x7.49) - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
2N6849

2N6849

MOSFET P-CH 100V 6.5A TO39

Microsemi Corporation

2,440 -
2N6849

数据表

- TO-205AF Metal Can Bulk Obsolete P-Channel MOSFET (Metal Oxide) 6.5A (Tc) 10V 320mOhm @ 6.5A, 10V Through Hole 4V @ 250µA 34.8 nC @ 10 V 100 V ±20V - - - TO-39 - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
2N6849U

2N6849U

MOSFET P-CH 100V 6.5A 18ULCC

Microsemi Corporation

7,381 -
2N6849U

数据表

- 18-CLCC Bulk Obsolete P-Channel MOSFET (Metal Oxide) 6.5A (Tc) 10V 300mOhm @ 4.1A, 10V Surface Mount 4V @ 250µA 34.8 nC @ 10 V 100 V ±20V - - - 18-ULCC (9.14x7.49) - 800mW (Ta), 25W (Tc) -55°C ~ 150°C (TJ)
IPA65R099C6XKSA1

IPA65R099C6XKSA1

MOSFET N-CH 650V 38A TO220

Infineon Technologies

3,585 -
IPA65R099C6XKSA1

数据表

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 38A (Tc) 10V 99mOhm @ 12.8A, 10V Through Hole 3.5V @ 1.2mA 127 nC @ 10 V 650 V ±20V 2780 pF @ 100 V - - PG-TO220-3-111 - 35W (Tc) -55°C ~ 150°C (TJ)
IPA65R150CFDXKSA1

IPA65R150CFDXKSA1

MOSFET N-CH 650V 22.4A TO220

Infineon Technologies

9,781 -
IPA65R150CFDXKSA1

数据表

CoolMOS™ TO-220-3 Full Pack Tube Obsolete N-Channel MOSFET (Metal Oxide) 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V Through Hole 4.5V @ 1mA 86 nC @ 10 V 650 V ±20V 2340 pF @ 100 V - - PG-TO220-3-111 - 34.7W (Tc) -55°C ~ 150°C (TJ)
IPB65R099C6ATMA1

IPB65R099C6ATMA1

MOSFET N-CH 650V 38A D2PAK

Infineon Technologies

4,154 -
IPB65R099C6ATMA1

数据表

CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 38A (Tc) 10V 99mOhm @ 12.8A, 10V Surface Mount 3.5V @ 1.2mA 127 nC @ 10 V 650 V ±20V 2780 pF @ 100 V - - PG-TO263-3 - 278W (Tc) -55°C ~ 150°C (TJ)
IPI65R099C6XKSA1

IPI65R099C6XKSA1

MOSFET N-CH 650V 38A TO262-3

Infineon Technologies

5,424 -
IPI65R099C6XKSA1

数据表

CoolMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 38A (Tc) 10V 99mOhm @ 12.8A, 10V Through Hole 3.5V @ 1.2mA 127 nC @ 10 V 650 V ±20V 2780 pF @ 100 V - - PG-TO262-3-1 - 278W (Tc) -55°C ~ 150°C (TJ)
IPP60R074C6XKSA1

IPP60R074C6XKSA1

MOSFET N-CH 600V 57.7A TO220-3

Infineon Technologies

4,659 -
IPP60R074C6XKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 57.7A (Tc) 10V 74mOhm @ 21A, 10V Through Hole 3.5V @ 1.4mA 138 nC @ 10 V 600 V ±20V 3020 pF @ 100 V - - PG-TO220-3 - 480.8W (Tc) -55°C ~ 150°C (TJ)
IPP65R074C6XKSA1

IPP65R074C6XKSA1

MOSFET N-CH 650V 57.7A TO220-3

Infineon Technologies

5,025 -
IPP65R074C6XKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 57.7A (Tc) 10V 74mOhm @ 13.9A, 10V Through Hole 3.5V @ 1.4mA 17 nC @ 10 V 650 V ±20V 3020 pF @ 100 V - - PG-TO220-3 - 480.8W (Tc) -55°C ~ 150°C (TJ)
IPP65R099C6XKSA1

IPP65R099C6XKSA1

MOSFET N-CH 650V 38A TO220-3

Infineon Technologies

9,149 -
IPP65R099C6XKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 38A (Tc) 10V 99mOhm @ 12.8A, 10V Through Hole 3.5V @ 1.2mA 15 nC @ 10 V 650 V ±20V 2780 pF @ 100 V - - PG-TO220-3 - 278W (Tc) -55°C ~ 150°C (TJ)
IPP65R150CFDXKSA1

IPP65R150CFDXKSA1

MOSFET N-CH 650V 22.4A TO220-3

Infineon Technologies

4,670 -
IPP65R150CFDXKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 22.4A (Tc) 10V 150mOhm @ 9.3A, 10V Through Hole 4.5V @ 900µA 86 nC @ 10 V 650 V ±20V 2340 pF @ 100 V - - PG-TO220-3 - 195.3W (Tc) -55°C ~ 150°C (TJ)
IPS65R1K4C6AKMA1

IPS65R1K4C6AKMA1

MOSFET N-CH 650V 3.2A TO251-3

Infineon Technologies

9,903 -
IPS65R1K4C6AKMA1

数据表

CoolMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.2A (Tc) 10V 1.4Ohm @ 1A, 10V Through Hole 3.5V @ 100µA 10.5 nC @ 10 V 650 V ±20V 225 pF @ 100 V - - PG-TO251-3-11 - 28W (Tc) -55°C ~ 150°C (TJ)
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户