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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
DMN10H170SFDE-13

DMN10H170SFDE-13

MOSFET N-CH 100V 2.9A 6UDFN

Diodes Incorporated

8,075 -
DMN10H170SFDE-13

数据表

- 6-PowerUDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.9A (Ta) 4.5V, 10V 160mOhm @ 5A, 10V Surface Mount 3V @ 250µA 9.7 nC @ 10 V 100 V ±20V 1167 pF @ 25 V - - U-DFN2020-6 (Type E) - 660mW (Ta) -55°C ~ 150°C (TJ)
DMN10H170SVT-13

DMN10H170SVT-13

MOSFET N-CH 100V 2.6A TSOT26

Diodes Incorporated

9,896 -
DMN10H170SVT-13

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2.6A (Ta) 4.5V, 10V 160mOhm @ 5A, 10V Surface Mount 3V @ 250µA 9.7 nC @ 10 V 100 V ±20V 1167 pF @ 25 V - - TSOT-26 - 1.2W (Ta) -55°C ~ 150°C (TJ)
DMN3033LSNQ-13

DMN3033LSNQ-13

MOSFET N-CH 30V 6A SC59

Diodes Incorporated

7,257 -
DMN3033LSNQ-13

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 6A (Ta) 4.5V, 10V 30mOhm @ 6A, 10V Surface Mount 2.1V @ 250µA 10.5 nC @ 5 V 30 V ±20V 755 pF @ 10 V - - SC-59-3 - 1.4W (Ta) -55°C ~ 150°C (TJ)
DMT3006LFDF-13

DMT3006LFDF-13

MOSFET N-CH 30V 14.1A 6UDFN

Diodes Incorporated

4,597 -
DMT3006LFDF-13

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14.1A (Ta) 3.7V, 10V 7mOhm @ 9A, 10V Surface Mount 3V @ 250µA 22.6 nC @ 10 V 30 V ±20V 1320 pF @ 15 V AEC-Q101 - U-DFN2020-6 (Type F) Automotive 800mW (Ta) -55°C ~ 150°C (TJ)
AOH3106

AOH3106

MOSFET N-CH 100V 2A SOT223

Alpha & Omega Semiconductor Inc.

7,216 -
AOH3106

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 2A (Ta) 4.5V, 10V 360mOhm @ 2A, 10V Surface Mount 2V @ 250µA 10 nC @ 10 V 100 V ±20V 185 pF @ 50 V - - SOT-223-4 - 3.1W (Ta) -55°C ~ 150°C (TJ)
SIA465EDJ-T1-GE3

SIA465EDJ-T1-GE3

MOSFET P-CH 20V 12A PPAK SC70-6

Vishay Siliconix

4,290 -
SIA465EDJ-T1-GE3

数据表

TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 12A (Tc) 2.5V, 4.5V 16.5mOhm @ 7A, 4.5V Surface Mount 1.2V @ 250µA 72 nC @ 10 V 20 V ±12V 2130 pF @ 10 V - - PowerPAK® SC-70-6 Single - 19W (Tc) -55°C ~ 150°C (TJ)
SIA472EDJ-T1-GE3

SIA472EDJ-T1-GE3

MOSFET N-CH 30V 12A PPAK SC70-6

Vishay Siliconix

5,800 -
SIA472EDJ-T1-GE3

数据表

TrenchFET® PowerPAK® SC-70-6 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 12A (Tc) 2.5V, 4.5V 20mOhm @ 10.8A, 4.5V Surface Mount 1.5V @ 250µA 36 nC @ 10 V 30 V ±12V 1265 pF @ 15 V - - PowerPAK® SC-70-6 Single - 19.2W (Tc) -55°C ~ 150°C (TJ)
DMS2220LFW-7

DMS2220LFW-7

MOSFET P-CH 20V 2.9A 8DFN

Diodes Incorporated

6,131 -
DMS2220LFW-7

数据表

- 8-VDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2.9A (Ta) 1.8V, 4.5V 95mOhm @ 2.8A, 4.5V Surface Mount 1.3V @ 250µA - 20 V ±12V 632 pF @ 10 V - Schottky Diode (Isolated) 8-DFN3020 (3x2) - 1.5W (Ta) -55°C ~ 150°C (TJ)
DMP1012USS-13

DMP1012USS-13

MOSFET BVDSS: 8V-24V SO-8 T&R 2.

Diodes Incorporated

3,258 -
DMP1012USS-13

数据表

- - Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8.5A (Ta) 1.8V, 4.5V 15mOhm @ 9A, 4.5V - 1V @ 250µA 19.5 nC @ 4.5 V 12 V ±8V 1344 pF @ 10 V - - - - 1.3W (Ta) -55°C ~ 150°C (TJ)
DMP6111SVT-13

DMP6111SVT-13

MOSFET BVDSS: 41V~60V TSOT26 T&R

Diodes Incorporated

3,895 -
DMP6111SVT-13

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2.7A (Ta) 4.5V, 10V 115mOhm @ 3A, 10V Surface Mount 3V @ 250µA 23.2 nC @ 10 V 60 V ±20V 1283 pF @ 30 V - - TSOT-26 - 1.1W (Ta) -55°C ~ 150°C (TJ)
PJW7N04_R2_00001

PJW7N04_R2_00001

40V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

7,701 -
PJW7N04_R2_00001

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 6.5A (Ta) 4.5V, 10V 42mOhm @ 5A, 10V Surface Mount 2.5V @ 250µA 4.8 nC @ 4.5 V 40 V ±20V 410 pF @ 20 V - - SOT-223 - 3.1W (Ta) -55°C ~ 150°C (TJ)
DMN3029LFG-13

DMN3029LFG-13

MOSFET N-CH 30V 5.3A PWRDI333-8

Diodes Incorporated

8,822 -
DMN3029LFG-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 5.3A (Ta) 4.5V, 10V 18.6mOhm @ 10A, 10V Surface Mount 1.8V @ 250µA 11.3 nC @ 10 V 30 V ±25V 580 pF @ 15 V - - POWERDI3333-8 - 1W (Ta) -55°C ~ 150°C (TJ)
TK20C60W,S1VQ

TK20C60W,S1VQ

MOSFET N-CH 600V 20A I2PAK

Toshiba Semiconductor and Storage

5,501 -
TK20C60W,S1VQ

数据表

DTMOSIV TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 20A (Ta) 10V 155mOhm @ 10A, 10V Through Hole 3.7V @ 1mA 48 nC @ 10 V 600 V ±30V 1680 pF @ 300 V - - I2PAK - 165W (Tc) 150°C (TJ)
FM6K62010L

FM6K62010L

MOSFET N-CH 20V 2A WSMINI6

Panasonic Electronic Components

4,068 -
FM6K62010L

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2A (Ta) 2.5V, 4V 105mOhm @ 1A, 4V Surface Mount 1.3V @ 1mA - 20 V ±10V 280 pF @ 10 V - Schottky Diode (Isolated) WSMini6-F1-B - 700mW (Ta) 125°C (TJ)
FM6L52020L

FM6L52020L

MOSFET N-CH 20V 2.2A WSSMINI6-F1

Panasonic Electronic Components

9,837 -
FM6L52020L

数据表

- 6-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 2.2A (Ta) 2.5V, 4V 105mOhm @ 1A, 4V Surface Mount 1.3V @ 1mA - 20 V ±10V 280 pF @ 10 V - - WSSMini6-F1 - 540mW (Ta) 125°C (TJ)
MTM131270BBF

MTM131270BBF

MOSFET P-CH 20V 2A MINI3-G3-B

Panasonic Electronic Components

2,981 -
MTM131270BBF

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 2A (Ta) 1.8 V, 4V 130mOhm @ 1A, 4V Surface Mount 1.1V @ 1mA - 20 V ±10V 300 pF @ 10 V - - MINI3-G3-B - 700mW (Ta) 150°C (TJ)
STULED656

STULED656

MOSFET N-CH 650V 6A IPAK

STMicroelectronics

7,394 -
STULED656

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 6A (Tc) 10V 1.3Ohm @ 2.7A, 10V Through Hole 4.5V @ 50µA 34 nC @ 10 V 650 V ±30V 895 pF @ 100 V - - TO-251 (IPAK) - 70W (Tc) 150°C (TJ)
2N6764T1

2N6764T1

MOSFET N-CH 100V 38A TO3

Microsemi Corporation

2,026 -
2N6764T1

数据表

- TO-204AE Bulk Active N-Channel MOSFET (Metal Oxide) 38A (Tc) 10V 65mOhm @ 38A, 10V Through Hole 4V @ 250µA 125 nC @ 10 V 100 V ±20V - - - TO-3 - 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ)
2N6768T1

2N6768T1

MOSFET N-CH 400V 14A TO254AA

Microsemi Corporation

9,950 -
2N6768T1

数据表

- TO-254-3, TO-254AA (Straight Leads) Bulk Active N-Channel MOSFET (Metal Oxide) 14A (Tc) 10V 400mOhm @ 14A, 10V Through Hole 4V @ 250µA 110 nC @ 10 V 400 V ±20V - - - TO-254AA - 4W (Ta), 150W (Tc) -55°C ~ 150°C (TJ)
STI5N52U

STI5N52U

MOSFET N-CH 525V 4.4A I2PAK

STMicroelectronics

3,006 -
STI5N52U

数据表

UltraFASTmesh™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 4.4A (Tc) 10V 1.5Ohm @ 2.2A, 10V Through Hole 4.5V @ 50µA 16.9 nC @ 10 V 525 V ±30V 529 pF @ 25 V - - I2PAK - 70W (Tc) -55°C ~ 150°C (TJ)
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