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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IPU50R1K4CEBKMA1

IPU50R1K4CEBKMA1

MOSFET N-CH 500V 3.1A TO251-3

Infineon Technologies

9,505 -
IPU50R1K4CEBKMA1

数据表

CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 3.1A (Tc) 13V 1.4Ohm @ 900mA, 13V Through Hole 3.5V @ 70µA 8.2 nC @ 10 V 500 V ±20V 178 pF @ 100 V - - PG-TO251-3 - 25W (Tc) -55°C ~ 150°C (TJ)
IPU50R2K0CEBKMA1

IPU50R2K0CEBKMA1

MOSFET N-CH 500V 2.4A TO251-3

Infineon Technologies

7,816 -
IPU50R2K0CEBKMA1

数据表

CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 2.4A (Tc) 13V 2Ohm @ 600mA, 13V Through Hole 3.5V @ 50µA 6 nC @ 10 V 500 V ±20V 124 pF @ 100 V - - PG-TO251-3 - 22W (Tc) -55°C ~ 150°C (TJ)
IPU60R600C6BKMA1

IPU60R600C6BKMA1

MOSFET N-CH 600V 7.3A TO251-3

Infineon Technologies

8,565 -
IPU60R600C6BKMA1

数据表

CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 7.3A (Tc) 10V 600mOhm @ 2.4A, 10V Through Hole 3.5V @ 200µA 20.5 nC @ 10 V 600 V ±20V 440 pF @ 100 V - - PG-TO251-3 - 63W (Tc) -55°C ~ 150°C (TJ)
IPU60R950C6BKMA1

IPU60R950C6BKMA1

MOSFET N-CH 600V 4.4A TO251-3

Infineon Technologies

9,376 -
IPU60R950C6BKMA1

数据表

CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 4.4A (Tc) 10V 950mOhm @ 1.5A, 10V Through Hole 3.5V @ 130µA 1.5 nC @ 10 V 600 V ±20V 280 pF @ 100 V - - PG-TO251-3 - 37W (Tc) -55°C ~ 150°C (TJ)
FDM15-06KC5

FDM15-06KC5

MOSFET N-CH 600V 15A I4PAC

IXYS

3,188 -
FDM15-06KC5

数据表

CoolMOS™ ISOPLUSi5-PAK™ Tube Active N-Channel MOSFET (Metal Oxide) 15A (Tc) 10V 165mOhm @ 12A, 10V Through Hole 3.5V @ 790µA 52 nC @ 10 V 600 V ±20V 2000 pF @ 100 V - - ISOPLUS i4-PAC™ - - -55°C ~ 150°C (TJ)
FDM47-06KC5

FDM47-06KC5

MOSFET N-CH 600V 47A I4PAC

IXYS

9,813 -
FDM47-06KC5

数据表

CoolMOS™, HiPerDyn™ ISOPLUSi5-PAK™ Tube Active N-Channel MOSFET (Metal Oxide) 47A (Tc) 10V 45mOhm @ 44A, 10V Through Hole 3.5V @ 3mA 190 nC @ 10 V 600 V ±20V 6800 pF @ 100 V - - ISOPLUS i4-PAC™ - - -55°C ~ 150°C (TJ)
DMN4020LFDE-13

DMN4020LFDE-13

MOSFET N-CH 40V 8A 6UDFN

Diodes Incorporated

4,166 -
DMN4020LFDE-13

数据表

- 6-PowerUDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 8A (Ta) 4.5V, 10V 20mOhm @ 8A, 10V Surface Mount 2.4V @ 250µA 19.1 nC @ 20 V 40 V ±20V 1060 pF @ 20 V - - U-DFN2020-6 (Type E) - 660mW (Ta) -55°C ~ 150°C (TJ)
DMN1005UFDF-13

DMN1005UFDF-13

LINEAR IC

Diodes Incorporated

4,924 -
DMN1005UFDF-13

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 14.1A (Ta) 2.5V, 4.5V 6mOhm @ 4A, 4.5V Surface Mount 1V @ 250µA 29.7 nC @ 4.5 V 12 V ±8V 2014 pF @ 6 V - - U-DFN2020-6 - 800mW (Ta) -55°C ~ 150°C (TJ)
DMP1012USSQ-13

DMP1012USSQ-13

MOSFET BVDSS: 8V~24V SO-8 T&R 2.

Diodes Incorporated

2,122 -
DMP1012USSQ-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 8.5A (Ta) 1.8V, 4.5V 13.5mOhm @ 9A, 4.5V Surface Mount 1V @ 250µA 31 nC @ 8 V 12 V ±8V 1344 pF @ 10 V AEC-Q101 - 8-SO Automotive 1.3W (Ta) -55°C ~ 150°C (TJ)
DMN2009UFDF-7

DMN2009UFDF-7

MOSFET BVDSS: 8V~24V U-DFN2020-6

Diodes Incorporated

9,839 -
DMN2009UFDF-7

数据表

- 6-UDFN Exposed Pad Bulk Active N-Channel MOSFET (Metal Oxide) 12.8A (Ta) 2.5V, 4.5V 9mOhm @ 8.5A, 4.5V Surface Mount 1.4V @ 250µA 27.9 nC @ 10 V 20 V ±12V 1083 pF @ 10 V - - U-DFN2020-6 (Type F) - 1.3W (Ta) -55°C ~ 150°C (TJ)
PJQ2461_R1_00001

PJQ2461_R1_00001

60V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

8,830 -
PJQ2461_R1_00001

数据表

- 6-WDFN Exposed Pad Tape & Reel (TR) Not For New Designs P-Channel MOSFET (Metal Oxide) 2.4A (Ta) 4.5V, 10V 190mOhm @ 2A, 10V Surface Mount 2.5V @ 250µA 8.3 nC @ 10 V 60 V ±20V 430 pF @ 30 V - - DFN2020B-6 - 2W (Ta) -55°C ~ 150°C (TJ)
MCG25P03-TP

MCG25P03-TP

MOSFET

Micro Commercial Co

4,632 -
MCG25P03-TP

数据表

- 8-VDFN Exposed Pad Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 25A (Tc) 4.5V, 10V 19mOhm @ 10A, 10V Surface Mount 2V @ 250µA 28 nC @ 10 V 30 V ±20V 1385 pF @ 15 V - - DFN3333 - 62.5W (Tj) -55°C ~ 150°C (TJ)
DMP2066LDMQ-7

DMP2066LDMQ-7

MOSFET P-CH 20V 4.6A SOT-26

Diodes Incorporated

2,671 -
DMP2066LDMQ-7

数据表

- SOT-23-6 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 4.6A (Ta) 2.5V, 4.5V 40mOhm @ 4.6A, 4.5V Surface Mount 1.2V @ 250µA 10.1 nC @ 4.5 V 20 V ±12V 820 pF @ 15 V - - SOT-26 - 1.25W (Ta) -55°C ~ 150°C (TJ)
DMG6968LSD-13

DMG6968LSD-13

MOSFET N-CH 20V 6.5A 8-SOP

Diodes Incorporated

5,459 -
DMG6968LSD-13

数据表

- - Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 6.5A (Ta) 1.8V, 4.5V 36mOhm @ 3.5A, 1.8V Surface Mount 1.5V @ 250µA 8.5 nC @ 4.5 V 20 V - 151 pF @ 10 V - - - - - -
SI2301Q-TPAU

SI2301Q-TPAU

MOSFET

Micro Commercial Co

9,282 -
SI2301Q-TPAU

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 2.8A 2.5V, 4.5V 120mOhm @ 2.8A, 4.5V Surface Mount 1V @ 250µA 14.5 nC @ 4.5 V 20 V ±8V 880 pF @ 6 V - - SOT-23 - 1.25W -55°C ~ 150°C (TJ)
MCT03N06-TP

MCT03N06-TP

Interface

Micro Commercial Co

4,035 -
MCT03N06-TP

数据表

- TO-261-4, TO-261AA Bulk Active N-Channel MOSFET (Metal Oxide) 3A 4.5V, 10V 105mOhm @ 3A, 10V Surface Mount 2V @ 250µA 6 nC @ 4.5 V 60 V ±20V 247 pF @ 30 V - - SOT-223 - 1.2W -55°C ~ 150°C (TJ)
NTR4503NT1

NTR4503NT1

MOSFET N-CH 30V 1.5A SOT23-3

onsemi

6,327 -
NTR4503NT1

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.5A (Ta) 4.5V, 10V 110mOhm @ 2.5A, 10V Surface Mount 3V @ 250µA 7 nC @ 10 V 30 V ±20V 250 pF @ 24 V - - SOT-23-3 (TO-236) - 420mW (Ta) -55°C ~ 150°C (TJ)
CPH6445-TL-E

CPH6445-TL-E

MOSFET N-CH 60V 3.5A CPH6

onsemi

9,533 -
CPH6445-TL-E

数据表

- SOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 3.5A (Ta) - 117mOhm @ 1.5A, 10V Surface Mount - 6.8 nC @ 10 V 60 V - 310 pF @ 20 V - - 6-CPH - - -
MGSF1N03LT3

MGSF1N03LT3

MOSFET N-CH 30V 1.6A SOT23-3

onsemi

2,685 -
MGSF1N03LT3

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 1.6A (Ta) 4.5V, 10V 100mOhm @ 1.2A, 10V Surface Mount 2.4V @ 250µA - 30 V ±20V 140 pF @ 5 V - - SOT-23-3 (TO-236) - 420mW (Ta) -55°C ~ 150°C (TJ)
PMN55LN,135

PMN55LN,135

MOSFET N-CH 20V 4.1A 6TSOP

NXP USA Inc.

6,826 -
PMN55LN,135

数据表

TrenchMOS™ SC-74, SOT-457 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 4.1A (Tc) 4.5V, 10V 65mOhm @ 2.5A, 10V Surface Mount 2V @ 1mA 13.1 nC @ 10 V 20 V ±15V 500 pF @ 20 V - - SC-74 - 1.75W (Tc) -55°C ~ 150°C (TJ)
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