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场效应晶体管（FETs）、MOSFETs

制造商	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
Alpha & Omega Semiconductor Inc. Analog Power Inc. ANBON SEMICONDUCTOR (INT'L) LIMITED APSEMI Bruckewell Cambridge GaN Devices Central Semiconductor Corp Coherent Corp Comchip Technology CoolCAD Diodes Incorporated Diotec Semiconductor EPC EPC Space, LLC EVVO Fairchild Semiconductor Fairchild/ON Semiconductor fastSiC Flip Electronics GaNPower GeneSiC Semiconductor Goford Semiconductor Good-Ark Semiconductor Harris Corporation Honeywell Aerospace HY Electronic (Cayman) Limited IceMOS Technology Infineon Technologies International Rectifier Intersil Inventchip IXYS IXYS Integrated Circuits Division Linear Integrated Systems, Inc. Littelfuse Inc. MaxLinear, Inc. MDD Meritek Micro Commercial Co Microchip Technology Microsemi Corporation Motorola National Semiconductor NEC Corporation Nexperia USA Inc. NextGen Components Group NoMIS Power NovuSem Nuvoton Technology Corporation NXP Semiconductors onsemi Panasonic - BSG Panjit International Inc. PN Junction Semiconductor Qorvo Quest Semi Rectron USA Renesas ROHM Semiconductor Sanken Electric USA Inc. Sanyo SemiQ Shenzhen Slkormicro Semicon Co., Ltd. Siemens Siliconix Skyworks Solutions Inc. SMC Diode Solutions SparkFun Electronics STMicroelectronics Taiwan Semiconductor Corporation Texas Instruments Torex Semiconductor Ltd Toshiba Semiconductor and Storage Transphorm TT Electronics/Optek Technology UMW Venkel Vicor Corporation Vishay Vishay General Semiconductor - Diodes Division Vishay Siliconix WeEn Semiconductors Wise-Integration Wolfspeed, Inc. YAGEO XSemi

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厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
FCPF260N60E-F152 MOSFET N-CH 600V 15A TO220F onsemi	3,427	-	询价单	数据表	SuperFET® II	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	15A (Tc)	-	260mOhm @ 7.5A, 10V	Through Hole	3.5V @ 250µA	62 nC @ 10 V	600 V	-	2500 pF @ 25 V	-	-	TO-220F-3	-	36W (Tc)	-55°C ~ 150°C (TJ)
PMPB11ENX PMPB11EN/SOT1220/SOT1220 Nexperia USA Inc.	5,345	-	询价单	数据表	-	6-UDFN Exposed Pad	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	9A (Ta)	4.5V, 10V	14.5mOhm @ 9A, 10V	Surface Mount	2V @ 250µA	20.6 nC @ 10 V	30 V	±20V	840 pF @ 15 V	-	-	DFN2020MD-6	-	1.7W (Ta), 12.5W (Tc)	-55°C ~ 150°C (TJ)
BSS192,135 MOSFET P-CH 240V 200MA SOT89 Nexperia USA Inc.	6,298	-	询价单	数据表	-	TO-243AA	Tape & Reel (TR)	Not For New Designs	P-Channel	MOSFET (Metal Oxide)	200mA (Ta)	10V	12Ohm @ 200mA, 10V	Surface Mount	2.8V @ 1mA	-	240 V	±20V	90 pF @ 25 V	-	-	SOT-89	-	560mW (Ta), 12.5W (Tc)	-55°C ~ 150°C (TJ)
FCPF380N60E-F152 MOSFET N-CH 600V 10.2A TO220F-3 onsemi	7,152	-	询价单	数据表	SuperFET® II	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	10.2A (Tc)	-	380mOhm @ 5A, 10V	Through Hole	3.5V @ 250µA	45 nC @ 10 V	600 V	-	1770 pF @ 25 V	-	-	TO-220F-3	-	31W (Tc)	-55°C ~ 150°C (TJ)
FDPF4N60NZ MOSFET N-CH 600V 3.8A TO220F onsemi	7,483	-	询价单	数据表	UniFET-II™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	3.8A (Tc)	10V	2.5Ohm @ 1.9A, 10V	Through Hole	5V @ 250µA	10.8 nC @ 10 V	600 V	±25V	510 pF @ 25 V	-	-	TO-220F-3	-	28W (Tc)	-55°C ~ 150°C (TJ)
FDB42AN15A0-F085 MOSFET N-CH 150V 35A D2PAK onsemi	5,957	-	询价单	数据表	PowerTrench®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	35A (Tc)	10V	42mOhm @ 12A, 10V	Surface Mount	4V @ 250µA	36 nC @ 10 V	150 V	±20V	2040 pF @ 25 V	AEC-Q101	-	TO-263 (D2PAK)	Automotive	150W (Tc)	-55°C ~ 175°C (TJ)
FDD120AN15A0-F085 MOSFET N-CH 150V 14A DPAK onsemi	5,338	-	询价单	数据表	PowerTrench®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	14A (Tc)	10V	120mOhm @ 4A, 10V	Surface Mount	4V @ 250µA	14 nC @ 10 V	150 V	±20V	743 pF @ 25 V	AEC-Q101	-	TO-252AA	Automotive	65W (Tc)	-55°C ~ 175°C (TJ)
2N6660JTX02 MOSFET N-CH 60V 990MA TO205AD Vishay Siliconix	6,821	-	询价单	数据表	-	TO-205AD, TO-39-3 Metal Can	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	990mA (Tc)	5V, 10V	3Ohm @ 1A, 10V	Through Hole	2V @ 1mA	-	60 V	±20V	50 pF @ 25 V	-	-	TO-205AD (TO-39)	-	725mW (Ta), 6.25W (Tc)	-55°C ~ 150°C (TJ)
2N6660JTXL02 MOSFET N-CH 60V 990MA TO205AD Vishay Siliconix	8,088	-	询价单	数据表	-	TO-205AD, TO-39-3 Metal Can	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	990mA (Tc)	5V, 10V	3Ohm @ 1A, 10V	Through Hole	2V @ 1mA	-	60 V	±20V	50 pF @ 25 V	-	-	TO-205AD (TO-39)	-	725mW (Ta), 6.25W (Tc)	-55°C ~ 150°C (TJ)
2N6660JTXV02 MOSFET N-CH 60V 990MA TO205AD Vishay Siliconix	9,980	-	询价单	数据表	-	TO-205AD, TO-39-3 Metal Can	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	990mA (Tc)	5V, 10V	3Ohm @ 1A, 10V	Through Hole	2V @ 1mA	-	60 V	±20V	50 pF @ 25 V	-	-	TO-205AD (TO-39)	-	725mW (Ta), 6.25W (Tc)	-55°C ~ 150°C (TJ)
2N6661JAN02 MOSFET N-CH 90V 860MA TO39 Vishay Siliconix	7,635	-	询价单	数据表	-	TO-205AD, TO-39-3 Metal Can	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	860mA (Tc)	5V, 10V	4Ohm @ 1A, 10V	Through Hole	2V @ 1mA	-	90 V	±20V	50 pF @ 25 V	-	-	TO-39	-	725mW (Ta), 6.25W (Tc)	-55°C ~ 150°C (TJ)
2N6661JTXL02 MOSFET N-CH 90V 860MA TO39 Vishay Siliconix	6,235	-	询价单	数据表	-	TO-205AD, TO-39-3 Metal Can	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	860mA (Tc)	5V, 10V	4Ohm @ 1A, 10V	Through Hole	2V @ 1mA	-	90 V	±20V	50 pF @ 25 V	-	-	TO-39	-	725mW (Ta), 6.25W (Tc)	-55°C ~ 150°C (TJ)
2N6661JTXV02 MOSFET N-CH 90V 860MA TO39 Vishay Siliconix	6,269	-	询价单	数据表	-	TO-205AD, TO-39-3 Metal Can	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	860mA (Tc)	5V, 10V	4Ohm @ 1A, 10V	Through Hole	2V @ 1mA	-	90 V	±20V	50 pF @ 25 V	-	-	TO-39	-	725mW (Ta), 6.25W (Tc)	-55°C ~ 150°C (TJ)
IRFD113 MOSFET N-CH 60V 800MA 4DIP Vishay Siliconix	2,644	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	800mA (Tc)	10V	800mOhm @ 800mA, 10V	Through Hole	4V @ 250µA	7 nC @ 10 V	60 V	±20V	200 pF @ 25 V	-	-	4-HVMDIP	-	1W (Tc)	-55°C ~ 150°C (TJ)
IRFD213 MOSFET N-CH 250V 450MA 4DIP Vishay Siliconix	8,412	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	450mA (Ta)	-	2Ohm @ 270mA, 10V	Through Hole	4V @ 250µA	8.2 nC @ 10 V	250 V	-	140 pF @ 25 V	-	-	4-HVMDIP	-	-	-55°C ~ 150°C (TJ)
IRFD9123 MOSFET P-CH 100V 1A 4DIP Vishay Siliconix	8,128	-	询价单	数据表	-	4-DIP (0.300", 7.62mm)	Tube	Obsolete	P-Channel	MOSFET (Metal Oxide)	1A (Ta)	-	600mOhm @ 600mA, 10V	Through Hole	4V @ 250µA	18 nC @ 10 V	100 V	-	390 pF @ 25 V	-	-	4-HVMDIP	-	-	-
IRFP27N60K MOSFET N-CH 600V 27A TO247-3 Vishay Siliconix	5,406	-	询价单	数据表	-	TO-247-3	Tube	Active	N-Channel	MOSFET (Metal Oxide)	27A (Tc)	10V	220mOhm @ 16A, 10V	Through Hole	5V @ 250µA	180 nC @ 10 V	600 V	±30V	4660 pF @ 25 V	-	-	TO-247AC	-	500W (Tc)	-55°C ~ 150°C (TJ)
SI4196DY-T1-GE3 MOSFET N-CH 20V 8A 8SO Vishay Siliconix	8,644	-	询价单	数据表	TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	8A (Tc)	1.8V, 4.5V	27mOhm @ 8A, 4.5V	Surface Mount	1V @ 250µA	22 nC @ 8 V	20 V	±8V	830 pF @ 10 V	-	-	8-SOIC	-	2W (Ta), 4.6W (Tc)	-55°C ~ 150°C (TJ)
SI4752DY-T1-GE3 MOSFET N-CH 30V 25A 8SO Vishay Siliconix	9,002	-	询价单	数据表	SkyFET®, TrenchFET®	8-SOIC (0.154", 3.90mm Width)	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	25A (Tc)	4.5V, 10V	5.5mOhm @ 10A, 10V	Surface Mount	2.2V @ 1mA	43 nC @ 10 V	30 V	±20V	1700 pF @ 15 V	-	Schottky Diode (Body)	8-SOIC	-	3W (Ta), 6.25W (Tc)	-55°C ~ 150°C (TJ)
SI8469DB-T2-E1 MOSFET P-CH 8V 4.6A 4MICROFOOT Vishay Siliconix	9,082	-	询价单	数据表	TrenchFET®	4-UFBGA	Tape & Reel (TR)	Obsolete	P-Channel	MOSFET (Metal Oxide)	4.6A (Ta)	4.5V	64mOhm @ 1.5A, 4.5V	Surface Mount	800mV @ 250µA	17 nC @ 4.5 V	8 V	±5V	900 pF @ 4 V	-	-	4-Microfoot	-	780mW (Ta), 1.8W (Tc)	-55°C ~ 150°C (TJ)

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