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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT20M11JLLMOSFET N-CH 200V 176A ISOTOP Microchip Technology |
6,776 | - |
|
数据表 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 176A (Tc) | - | 11mOhm @ 88A, 10V | Chassis Mount | 5V @ 5mA | 180 nC @ 10 V | 200 V | - | 10320 pF @ 25 V | - | - | ISOTOP® | - | - | - |
|
APTM120DA30T1GMOSFET N-CH 1200V 31A SP1 Microchip Technology |
7,057 | - |
|
数据表 |
- | SP1 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 31A (Tc) | 10V | 360mOhm @ 25A, 10V | Chassis Mount | 5V @ 2.5mA | 560 nC @ 10 V | 1200 V | ±30V | 14560 pF @ 25 V | - | - | SP1 | - | 657W (Tc) | -40°C ~ 150°C (TJ) |
|
APTC60SKM24T1GMOSFET N-CH 600V 95A SP1 Microchip Technology |
4,957 | - |
|
数据表 |
CoolMOS™ | SP1 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 95A (Tc) | 10V | 24mOhm @ 47.5A, 10V | Chassis Mount | 3.9V @ 5mA | 300 nC @ 10 V | 600 V | ±20V | 14400 pF @ 25 V | - | - | SP1 | - | 462W (Tc) | -40°C ~ 150°C (TJ) |
|
APT30M19JVRMOSFET N-CH 300V 130A ISOTOP Microchip Technology |
9,616 | - |
|
数据表 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 130A (Tc) | 10V | 19mOhm @ 500mA, 10V | Chassis Mount | 4V @ 5mA | 975 nC @ 10 V | 300 V | ±30V | 21600 pF @ 25 V | - | - | ISOTOP® | - | 700W (Tc) | -55°C ~ 150°C (TJ) |
|
APT10026L2FLLGMOSFET N-CH 1000V 38A 264 MAX Microchip Technology |
7,207 | - |
|
数据表 |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 38A (Tc) | - | 260mOhm @ 19A, 10V | Through Hole | 5V @ 5mA | 267 nC @ 10 V | 1000 V | - | 7114 pF @ 25 V | - | - | 264 MAX™ [L2] | - | - | - |
|
|
APT20M11JFLLMOSFET N-CH 200V 176A ISOTOP Microchip Technology |
2,064 | - |
|
数据表 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 176A (Tc) | - | 11mOhm @ 88A, 10V | Chassis Mount | 5V @ 5mA | 180 nC @ 10 V | 200 V | - | 10320 pF @ 25 V | - | - | ISOTOP® | - | - | - |
|
|
APT8015JVRMOSFET N-CH 800V 44A ISOTOP Microchip Technology |
2,539 | - |
|
数据表 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 44A (Tc) | - | 150mOhm @ 500mA, 10V | Chassis Mount | 4V @ 5mA | 285 nC @ 10 V | 800 V | - | 17650 pF @ 25 V | - | - | ISOTOP® | - | - | - |
|
|
APT20M11JVFRMOSFET N-CH 200V 175A ISOTOP Microchip Technology |
3,393 | - |
|
数据表 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 175A (Tc) | 10V | 11mOhm @ 500mA, 10V | Chassis Mount | 4V @ 5mA | 180 nC @ 10 V | 200 V | ±30V | 21600 pF @ 25 V | - | - | ISOTOP® | - | 700W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT60M75JVRMOSFET N-CH 600V 62A ISOTOP Microchip Technology |
8,447 | - |
|
数据表 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 62A (Tc) | 10V | 75mOhm @ 500mA, 10V | Chassis Mount | 4V @ 5mA | 1050 nC @ 10 V | 600 V | ±30V | 19800 pF @ 25 V | - | - | ISOTOP® | - | 700W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT30M19JVFRMOSFET N-CH 300V 130A ISOTOP Microchip Technology |
6,057 | - |
|
数据表 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 130A (Tc) | 10V | 19mOhm @ 500mA, 10V | Chassis Mount | 4V @ 5mA | 975 nC @ 10 V | 300 V | ±30V | 21600 pF @ 25 V | - | - | ISOTOP® | - | 700W (Tc) | -55°C ~ 150°C (TJ) |
