富聪科技订单满¥1000免运费
关注我们:

场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

全部重置
全部应用
结果
图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
APTM100DAM90G

APTM100DAM90G

MOSFET N-CH 1000V 78A SP6

Microchip Technology

2,442 -
APTM100DAM90G

数据表

- SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 78A (Tc) 10V 105mOhm @ 39A, 10V Chassis Mount 5V @ 10mA 744 nC @ 10 V 1000 V ±30V 20700 pF @ 25 V - - SP6 - 1250W (Tc) -40°C ~ 150°C (TJ)
APTM50DAM17G

APTM50DAM17G

MOSFET N-CH 500V 180A SP6

Microchip Technology

2,253 -
APTM50DAM17G

数据表

- SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 20mOhm @ 90A, 10V Chassis Mount 5V @ 10mA 560 nC @ 10 V 500 V ±30V 28000 pF @ 25 V - - SP6 - 1250W (Tc) -40°C ~ 150°C (TJ)
APTM50SKM17G

APTM50SKM17G

MOSFET N-CH 500V 180A SP6

Microchip Technology

9,940 -
APTM50SKM17G

数据表

- SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 180A (Tc) 10V 20mOhm @ 90A, 10V Chassis Mount 5V @ 10mA 560 nC @ 10 V 500 V ±30V 28000 pF @ 25 V - - SP6 - 1250W (Tc) -40°C ~ 150°C (TJ)
APTM10DAM02G

APTM10DAM02G

MOSFET N-CH 100V 495A SP6

Microchip Technology

8,940 -
APTM10DAM02G

数据表

- SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 495A (Tc) 10V 2.5mOhm @ 200A, 10V Chassis Mount 4V @ 10mA 1360 nC @ 10 V 100 V ±30V 40000 pF @ 25 V - - SP6 - 1250W (Tc) -40°C ~ 150°C (TJ)
APTM10SKM02G

APTM10SKM02G

MOSFET N-CH 100V 495A SP6

Microchip Technology

4,881 -
APTM10SKM02G

数据表

- SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 495A (Tc) 10V 2.5mOhm @ 200A, 10V Chassis Mount 4V @ 10mA 1360 nC @ 10 V 100 V ±30V 40000 pF @ 25 V - - SP6 - 1250W (Tc) -40°C ~ 150°C (TJ)
APTM20UM04SAG

APTM20UM04SAG

MOSFET N-CH 200V 417A SP6

Microchip Technology

4,995 -
APTM20UM04SAG

数据表

- SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 417A (Tc) 10V 5mOhm @ 208.5A, 10V Chassis Mount 5V @ 10mA 560 nC @ 10 V 200 V ±30V 28800 pF @ 25 V - - SP6 - 1560W (Tc) -40°C ~ 150°C (TJ)
APTM10UM02FAG

APTM10UM02FAG

MOSFET N-CH 100V 570A SP6

Microchip Technology

6,117 -
APTM10UM02FAG

数据表

- SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 570A (Tc) 10V 2.5mOhm @ 200A, 10V Chassis Mount 4V @ 10mA 1360 nC @ 10 V 100 V ±30V 40000 pF @ 25 V - - SP6 - 1660W (Tc) -40°C ~ 150°C (TJ)
APTM50UM13SAG

APTM50UM13SAG

MOSFET N-CH 500V 335A SP6

Microchip Technology

2,962 -
APTM50UM13SAG

数据表

- SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 335A (Tc) 10V 15mOhm @ 167.5A, 10V Chassis Mount 5V @ 20mA 800 nC @ 10 V 500 V ±30V 42200 pF @ 25 V - - SP6 - 3290W (Tc) -40°C ~ 150°C (TJ)
APTM100UM65DAG

APTM100UM65DAG

MOSFET N-CH 1000V 145A SP6

Microchip Technology

9,959 -
APTM100UM65DAG

数据表

- SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 145A (Tc) 10V 78mOhm @ 72.5A, 10V Chassis Mount 5V @ 20mA 1068 nC @ 10 V 1000 V ±30V 28500 pF @ 25 V - - SP6 - 3250W (Tc) -40°C ~ 150°C (TJ)
APTM120U10SAG

APTM120U10SAG

MOSFET N-CH 1200V 116A SP6

Microchip Technology

6,912 -
APTM120U10SAG

数据表

- SP6 Bulk Active N-Channel MOSFET (Metal Oxide) 116A (Tc) 10V 120mOhm @ 58A, 10V Chassis Mount 5V @ 20mA 1100 nC @ 10 V 1200 V ±30V 28900 pF @ 25 V - - SP6 - 3290W (Tc) -40°C ~ 150°C (TJ)
共 621 条记录«上一页1... 4344454647484950...63下一页»
富聪科技

搜索

富聪科技

产品

富聪科技

电话

富聪科技

用户