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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
APT80F60J

APT80F60J

MOSFET N-CH 600V 84A ISOTOP

Microchip Technology

6,509 -
APT80F60J

数据表

POWER MOS 8™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 84A (Tc) 10V 55mOhm @ 60A, 10V Chassis Mount 5V @ 2.5mA 598 nC @ 10 V 600 V ±30V 23994 pF @ 25 V - - ISOTOP® - 961W (Tc) -55°C ~ 150°C (TJ)
APL602J

APL602J

MOSFET N-CH 600V 43A ISOTOP

Microchip Technology

9,460 -
APL602J

数据表

- SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 43A (Tc) 12V 125mOhm @ 21.5A, 12V Chassis Mount 4V @ 2.5mA - 600 V ±30V 9000 pF @ 25 V - - ISOTOP® - 565W (Tc) -55°C ~ 150°C (TJ)
APT100F50J

APT100F50J

MOSFET N-CH 500V 103A ISOTOP

Microchip Technology

9,775 -
APT100F50J

数据表

POWER MOS 8™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 103A (Tc) 10V 36mOhm @ 75A, 10V Chassis Mount 5V @ 5mA 620 nC @ 10 V 500 V ±30V 24600 pF @ 25 V - - ISOTOP® - 960W (Tc) -55°C ~ 150°C (TJ)
APT60M75JFLL

APT60M75JFLL

MOSFET N-CH 600V 58A ISOTOP

Microchip Technology

2,496 -
APT60M75JFLL

数据表

POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 58A (Tc) 10V 75mOhm @ 29A, 10V Chassis Mount 5V @ 5mA 195 nC @ 10 V 600 V ±30V 8930 pF @ 25 V - - ISOTOP® - 595W (Tc) -55°C ~ 150°C (TJ)
APT10026L2LLG

APT10026L2LLG

MOSFET N-CH 1000V 38A 264 MAX

Microchip Technology

8,286 -
APT10026L2LLG

数据表

POWER MOS 7® TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 38A (Tc) - 260mOhm @ 19A, 10V Through Hole 5V @ 5mA 267 nC @ 10 V 1000 V - 7114 pF @ 25 V - - 264 MAX™ [L2] - - -
APT34M120J

APT34M120J

MOSFET N-CH 1200V 35A SOT227

Microchip Technology

7,967 -
APT34M120J

数据表

- SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 35A (Tc) 10V 300mOhm @ 25A, 10V Chassis Mount 5V @ 2.5mA 560 nC @ 10 V 1200 V ±30V 18200 pF @ 25 V - - SOT-227 - 960W (Tc) -55°C ~ 150°C (TJ)
APT45M100J

APT45M100J

MOSFET N-CH 1000V 45A SOT227

Microchip Technology

4,976 -
APT45M100J

数据表

- SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 45A (Tc) 10V 180mOhm @ 33A, 10V Chassis Mount 5V @ 2.5mA 570 nC @ 10 V 1000 V ±30V 18500 pF @ 25 V - - SOT-227 - 960W (Tc) -55°C ~ 150°C (TJ)
APT10M07JVFR

APT10M07JVFR

MOSFET N-CH 100V 225A ISOTOP

Microchip Technology

6,981 -
APT10M07JVFR

数据表

POWER MOS V® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 225A (Tc) - 7mOhm @ 500mA, 10V Chassis Mount 4V @ 5mA 1050 nC @ 10 V 100 V - 21600 pF @ 25 V - - ISOTOP® - - -
APT60M75JLL

APT60M75JLL

MOSFET N-CH 600V 58A ISOTOP

Microchip Technology

9,977 -
APT60M75JLL

数据表

POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 58A (Tc) 10V 75mOhm @ 29A, 10V Chassis Mount 5V @ 5mA 195 nC @ 10 V 600 V ±30V 8930 pF @ 25 V - - ISOTOP® - 595W (Tc) -55°C ~ 150°C (TJ)
APT12057JFLL

APT12057JFLL

MOSFET N-CH 1200V 19A ISOTOP

Microchip Technology

2,941 -
APT12057JFLL

数据表

POWER MOS 7® SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 19A (Tc) - 570mOhm @ 9.5A, 10V Chassis Mount 5V @ 2.5mA 185 nC @ 10 V 1200 V - 5155 pF @ 25 V - - ISOTOP® - - -
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