订单满￥1000免运费
24小时咨询热线
0755 83957878
场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
APT30M36JLLMOSFET N-CH 300V 76A ISOTOP Microchip Technology |
7,964 | - |
|
数据表 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 76A (Tc) | - | 36mOhm @ 38A, 10V | Chassis Mount | 5V @ 2.5mA | 115 nC @ 10 V | 300 V | - | 6480 pF @ 25 V | - | - | ISOTOP® | - | - | - |
|
APT50M50JLLMOSFET N-CH 500V 71A ISOTOP Microchip Technology |
5,499 | - |
|
数据表 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 71A (Tc) | 10V | 50mOhm @ 35.5A, 10V | Chassis Mount | 5V @ 5mA | 200 nC @ 10 V | 500 V | ±30V | 10550 pF @ 25 V | - | - | ISOTOP® | - | 595W (Tc) | -55°C ~ 150°C (TJ) |
|
APL602L-1MOSFET LINEAR 600 V 49 A TO-264 Microchip Technology |
6,823 | - |
|
数据表 |
- | TO-264-3, TO-264AA | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 49A (Tc) | 12V | 125mOhm @ 24.5A, 12V | Through Hole | 4V @ 2.5mA | - | 600 V | ±30V | 9000 pF @ 25 V | - | - | TO-264 [L] | - | 730W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT32F120JMOSFET N-CH 1200V 33A ISOTOP Microchip Technology |
9,922 | - |
|
数据表 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 33A (Tc) | 10V | 320mOhm @ 25A, 10V | Chassis Mount | 5V @ 2.5mA | 560 nC @ 10 V | 1200 V | ±30V | 18200 pF @ 25 V | - | - | ISOTOP® | - | 960W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT8014JLLMOSFET N-CH 800V 42A ISOTOP Microchip Technology |
2,233 | - |
|
数据表 |
POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 10V | 140mOhm @ 21A, 10V | Chassis Mount | 5V @ 5mA | 285 nC @ 10 V | 800 V | ±30V | 7238 pF @ 25 V | - | - | ISOTOP® | - | 595W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APTM100SK33T1GMOSFET N-CH 1000V 23A SP1 Microchip Technology |
9,568 | - |
|
数据表 |
- | SP1 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 23A (Tc) | 10V | 396mOhm @ 18A, 10V | Chassis Mount | 5V @ 2.5mA | 305 nC @ 10 V | 1000 V | ±30V | 7868 pF @ 25 V | - | - | SP1 | - | 390W (Tc) | -40°C ~ 150°C (TJ) |
|
|
APT80M60JMOSFET N-CH 600V 84A ISOTOP Microchip Technology |
7,139 | - |
|
数据表 |
POWER MOS 8™ | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 84A (Tc) | 10V | 55mOhm @ 60A, 10V | Chassis Mount | 5V @ 5mA | 600 nC @ 10 V | 600 V | ±30V | 24000 pF @ 25 V | - | - | ISOTOP® | - | 960W (Tc) | -55°C ~ 150°C (TJ) |
|
APL602B2GMOSFET N-CH 600V 49A T-MAX Microchip Technology |
9,551 | - |
|
数据表 |
- | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 49A (Tc) | 12V | 125mOhm @ 24.5A, 12V | Through Hole | 4V @ 2.5mA | - | 600 V | ±30V | 9000 pF @ 25 V | - | - | T-MAX™ [B2] | - | 730W (Tc) | -55°C ~ 150°C (TJ) |
|
APL602LGMOSFET N-CH 600V 49A TO264 Microchip Technology |
6,776 | - |
|
数据表 |
- | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 49A (Tc) | 12V | 125mOhm @ 24.5A, 12V | Through Hole | 4V @ 2.5mA | - | 600 V | ±30V | 9000 pF @ 25 V | - | - | TO-264 [L] | - | 730W (Tc) | -55°C ~ 150°C (TJ) |
|
|
APT10M11JVFRMOSFET N-CH 100V 144A ISOTOP Microchip Technology |
3,227 | - |
|
数据表 |
POWER MOS V® | SOT-227-4, miniBLOC | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 144A (Tc) | - | 11mOhm @ 500mA, 10V | Chassis Mount | 4V @ 2.5mA | 450 nC @ 10 V | 100 V | - | 10380 pF @ 25 V | - | - | ISOTOP® | - | - | - |
