International Rectifier|场效应晶体管（FETs）、MOSFETs - 页 5

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRF6810STRPBF PFET, 16A I(D), 25V, 0.0052OHM, International Rectifier	4,760	-	询价单	数据表	HEXFET®	DirectFET™ Isometric S1	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	16A (Ta), 50A (Tc)	4.5V, 10V	5.2mOhm @ 16A, 10V	Surface Mount	2.1V @ 25µA	11 nC @ 4.5 V	25 V	±16V	1038 pF @ 13 V	-	-	DIRECTFET S1	-	2.1W (Ta), 20W (Tc)	-40°C ~ 150°C (TJ)
AUIRLZ44ZL MOSFET N-CH 55V 51A TO220AB International Rectifier	9,400	-	询价单	数据表	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	51A (Tc)	-	13.5mOhm @ 31A, 10V	Through Hole	3V @ 250µA	36 nC @ 5 V	55 V	±16V	1620 pF @ 25 V	AEC-Q101	-	TO-220AB	Automotive	80W (Tc)	-55°C ~ 175°C (TJ)
IRFZ46ZSTRLPBF IRFZ46 - 12V-300V N-CHANNEL POWE International Rectifier	62,152	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	51A (Tc)	10V	13.6mOhm @ 31A, 10V	Surface Mount	4V @ 250µA	46 nC @ 10 V	55 V	±20V	1460 pF @ 25 V	-	-	D2PAK	-	82W (Tc)	-55°C ~ 175°C (TJ)
AUIRFU4104 MOSFET N-CH 40V 42A TO251-3-21 International Rectifier	21,075	-	询价单	数据表	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	42A (Tc)	-	5.5mOhm @ 42A, 10V	Through Hole	4V @ 250µA	89 nC @ 10 V	40 V	±20V	2950 pF @ 25 V	AEC-Q101	-	PG-TO-251-3-21	Automotive	140W (Tc)	-55°C ~ 175°C (TJ)
AUIRLZ24NS AUTOMOTIVE HEXFET POWER MOSFET International Rectifier	2,902	-	询价单	数据表	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	18A (Tc)	4V, 10V	60mOhm @ 11A, 10V	Surface Mount	2V @ 250µA	15 nC @ 5 V	55 V	±16V	480 pF @ 25 V	-	-	D2PAK	-	3.8W (Ta), 45W (Tc)	-55°C ~ 175°C (TJ)
AUIRFR5505TRL MOSFET P-CH 55V 18A DPAK International Rectifier	1,604	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Bulk	Active	P-Channel	MOSFET (Metal Oxide)	18A (Tc)	10V	110mOhm @ 9.6A, 10V	Surface Mount	4V @ 250µA	32 nC @ 10 V	55 V	±20V	650 pF @ 25 V	-	-	DPAK	-	57W (Tc)	-55°C ~ 150°C (TJ)
IRF6711STRPBF MOSFET N-CH 25V 19A/84A DIRECTFT International Rectifier	4,800	-	询价单	数据表	DirectFET™	DirectFET™ Isometric SQ	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	19A (Ta), 84A (Tc)	-	3.8mOhm @ 19A, 10V	Surface Mount	2.35V @ 25µA	20 nC @ 4.5 V	25 V	±20V	1810 pF @ 13 V	-	-	DirectFET™ Isometric SQ	-	2.2W (Ta), 42W (Tc)	-40°C ~ 150°C (TJ)
IRL3705ZPBF IRL3705 - 12V-300V N-CHANNEL POW International Rectifier	5,004	-	询价单	数据表	HEXFET®	TO-220-3	Bulk	Obsolete	N-Channel	MOSFET (Metal Oxide)	75A (Tc)	4.5V, 10V	8mOhm @ 52A, 10V	Through Hole	3V @ 250µA	60 nC @ 5 V	55 V	±16V	2880 pF @ 25 V	-	-	TO-220AB	-	130W (Tc)	-55°C ~ 175°C (TJ)
AUIRFZ48Z MOSFET N-CH 55V 61A TO220 International Rectifier	4,642	-	询价单	数据表	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	61A (Tc)	10V	11mOhm @ 37A, 10V	Through Hole	4V @ 250µA	64 nC @ 10 V	55 V	±20V	1720 pF @ 25 V	-	-	TO-220	-	91W (Tc)	-55°C ~ 175°C (TJ)
AUIRF3504 AUTOMOTIVE HEXFET N CHANNEL International Rectifier	10,600	-	询价单	数据表	HEXFET®	TO-220-3	Bulk	Active	N-Channel	MOSFET (Metal Oxide)	87A (Tc)	10V	9.2mOhm @ 52A, 10V	Through Hole	4V @ 100µA	54 nC @ 10 V	40 V	±20V	2150 pF @ 25 V	-	-	TO-220AB	-	143W (Tc)	-55°C ~ 175°C (TJ)

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