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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AUIRF6218SAUIRF6218 - 20V-150V P-CHANNEL A International Rectifier |
2,025 | - |
|
数据表 |
HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 27A (Tc) | 10V | 150mOhm @ 16A, 10V | Surface Mount | 5V @ 250µA | 110 nC @ 10 V | 150 V | ±20V | 2210 pF @ 25 V | - | - | PG-TO263-3 | - | 250W (Tc) | -55°C ~ 175°C (TJ) |
|
IRLU8729-701PBFMOSFET N-CH 30V 58A TO251-3-21 International Rectifier |
2,773 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 58A (Tc) | - | 8.9mOhm @ 25A, 10V | Through Hole | 2.35V @ 25µA | 16 nC @ 4.5 V | 30 V | ±20V | 1350 pF @ 15 V | - | - | PG-TO-251-3-21 | - | 55W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFH8316TRPBF-IRIRFH8316 - HEXFET POWER MOSFET International Rectifier |
6,260 | - |
|
数据表 |
HEXFET® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 27A (Ta), 50A (Tc) | 4.5V, 10V | 2.95mOhm @ 20A, 10V | Surface Mount | 2.2V @ 50µA | 59 nC @ 10 V | 30 V | ±20V | 3610 pF @ 10 V | - | - | 8-PQFN (5x6) | - | 3.6W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) |
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IRFH7921TRPBF-IRIRFH7921 - HEXFET POWER MOSFET International Rectifier |
11,183 | - |
|
数据表 |
HEXFET® | 8-PowerVDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 15A (Ta), 34A (Tc) | 4.5V, 10V | 8.5mOhm @ 15A, 10V | Surface Mount | 2.35V @ 25µA | 14 nC @ 4.5 V | 30 V | ±20V | 1210 pF @ 15 V | - | - | PQFN (5x6) Single Die | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) |
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IRFH7936TRPBFIRFH7936 - N-CHANNEL International Rectifier |
4,530 | - |
|
数据表 |
HEXFET® | 8-PowerTDFN | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Ta), 54A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | Surface Mount | 2.35V @ 50µA | 26 nC @ 4.5 V | 30 V | ±20V | 2360 pF @ 15 V | - | - | 8-PQFN (5x6) | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) |
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IRFHM4234TRPBFHEXFET POWER MOSFET International Rectifier |
1,122 | - |
|
数据表 |
FASTIRFET™, HEXFET® | 8-TQFN Exposed Pad | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 20A (Ta) | 4.5V, 10V | 4.4mOhm @ 30A, 10V | Surface Mount | 2.1V @ 25µA | 17 nC @ 10 V | 25 V | ±20V | 1011 pF @ 13 V | - | - | - | - | 2.8W (Ta), 28W (Tc) | -55°C ~ 150°C (TJ) |
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AUIRFL014NTRAUTOMOTIVE POWER MOSFET International Rectifier |
16,040 | - |
|
数据表 |
HEXFET® | TO-261-4, TO-261AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1.5A (Ta) | 10V | 160mOhm @ 1.9A, 10V | Surface Mount | 4V @ 250µA | 11 nC @ 10 V | 55 V | ±20V | 190 pF @ 25 V | - | - | SOT-223 | - | 1W (Ta) | -55°C ~ 150°C (TJ) |
|
IRFU4105ZPBF-IRHEXFET N-CHANNEL POWER MOSFET International Rectifier |
1,993 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30A (Tc) | 10V | 24.5mOhm @ 18A, 10V | Through Hole | 4V @ 250µA | 27 nC @ 10 V | 55 V | ±20V | 740 pF @ 25 V | - | - | IPAK (TO-251AA) | - | 48W (Tc) | -55°C ~ 175°C (TJ) |
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IRLU3802PBFHEXFET POWER MOSFET International Rectifier |
4,178 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 84A (Tc) | 2.8V, 4.5V | 8.5mOhm @ 15A, 4.5V | Through Hole | 1.9V @ 250µA | 41 nC @ 5 V | 12 V | ±12V | 2490 pF @ 6 V | - | - | IPAK | - | 88W (Tc) | -55°C ~ 175°C (TJ) |
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IRLR3802PBFMOSFET N-CH 12V 84A DPAK International Rectifier |
3,740 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 84A (Tc) | - | 8.5mOhm @ 15A, 4.5V | Surface Mount | 1.9V @ 250µA | 41 nC @ 5 V | 12 V | ±12V | 2490 pF @ 6 V | - | - | TO-252AA | - | 88W (Tc) | -55°C ~ 175°C (TJ) |
