Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 601

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IPD80R2K8CEBTMA1 MOSFET N-CH 800V 1.9A TO252-3 Infineon Technologies	3,370	-	询价单	数据表	CoolMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	1.9A (Tc)	10V	2.8Ohm @ 1.1A, 10V	Surface Mount	3.9V @ 120µA	12 nC @ 10 V	800 V	±20V	290 pF @ 100 V	-	-	PG-TO252-3-11	-	42W (Tc)	-55°C ~ 150°C (TJ)
IPD80R1K4CEBTMA1 MOSFET N-CH 800V 3.9A TO252-3 Infineon Technologies	6,953	-	询价单	数据表	CoolMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	3.9A (Tc)	10V	1.4Ohm @ 2.3A, 10V	Surface Mount	3.9V @ 240µA	23 nC @ 10 V	800 V	±20V	570 pF @ 100 V	-	-	PG-TO252-3-11	-	63W (Tc)	-55°C ~ 150°C (TJ)
IPD80R1K0CEBTMA1 MOSFET N-CH 800V 5.7A TO252-3 Infineon Technologies	6,655	-	询价单	数据表	CoolMOS™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	5.7A (Tc)	10V	950mOhm @ 3.6A, 10V	Surface Mount	3.9V @ 250µA	31 nC @ 10 V	800 V	±20V	785 pF @ 100 V	-	-	PG-TO252-3-11	-	83W (Tc)	-55°C ~ 150°C (TJ)
IPU80R2K8CEBKMA1 MOSFET N-CH 800V 1.9A TO251-3 Infineon Technologies	2,418	-	询价单	数据表	CoolMOS™	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	1.9A (Tc)	10V	2.8Ohm @ 1.1A, 10V	Through Hole	3.9V @ 120µA	12 nC @ 10 V	800 V	±20V	290 pF @ 100 V	-	-	PG-TO251-3	-	42W (Tc)	-55°C ~ 150°C (TJ)
IRFH7787TRPBF MOSFET N-CH 75V 68A PQFN Infineon Technologies	7,516	-	询价单	数据表	HEXFET®, StrongIRFET™	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	68A (Tc)	6V, 10V	8mOhm @ 41A, 10V	Surface Mount	3.7V @ 100µA	110 nC @ 10 V	75 V	±20V	4030 pF @ 25 V	-	-	PQFN (5x6)	-	83W (Tc)	-55°C ~ 150°C (TJ)
IRFSL7730PBF MOSFET N-CH 75V 195A TO262 Infineon Technologies	6,910	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	6V, 10V	2.6mOhm @ 100A, 10V	Through Hole	3.7V @ 250µA	407 nC @ 10 V	75 V	±20V	13660 pF @ 25 V	-	-	TO-262	-	375W (Tc)	-55°C ~ 175°C (TJ)
IRFSL7734PBF MOSFET N-CH 75V 183A TO262 Infineon Technologies	2,002	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	183A (Tc)	6V, 10V	3.5mOhm @ 100A, 10V	Through Hole	3.7V @ 250µA	270 nC @ 10 V	75 V	±20V	10150 pF @ 25 V	-	-	TO-262	-	290W (Tc)	-55°C ~ 175°C (TJ)
IRFR7740PBF MOSFET N-CH 75V 87A DPAK Infineon Technologies	3,280	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	87A (Tc)	6V, 10V	7.2mOhm @ 52A, 10V	Surface Mount	3.7V @ 100µA	126 nC @ 10 V	75 V	±20V	4430 pF @ 25 V	-	-	TO-252AA (DPAK)	-	140W (Tc)	-55°C ~ 175°C (TJ)
IRFR7746PBF MOSFET N-CH 75V 56A DPAK Infineon Technologies	8,395	-	询价单	数据表	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	6V, 10V	11.2mOhm @ 35A, 10V	Surface Mount	3.7V @ 100µA	89 nC @ 10 V	75 V	±20V	3107 pF @ 25 V	-	-	TO-252AA (DPAK)	-	99W (Tc)	-55°C ~ 175°C (TJ)
IRFS7730-7PPBF MOSFET N-CH 75V 240A D2PAK Infineon Technologies	6,135	-	询价单	数据表	StrongIRFET™	TO-263-7, D2PAK (6 Leads + Tab), TO-263CB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	240A (Tc)	6V, 10V	2mOhm @ 100A, 10V	Surface Mount	3.7V @ 250µA	428 nC @ 10 V	75 V	±20V	13970 pF @ 25 V	-	-	D2PAK (7-Lead)	-	375W (Tc)	-55°C ~ 175°C (TJ)

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