Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 600

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
BSZ105N04NSGATMA2 TRENCH <= 40V Infineon Technologies	6,324	-	询价单	数据表	-	8-PowerVDFN	Tape & Reel (TR)	Active	N-Channel	MOSFET (Metal Oxide)	11A (Ta), 40A (Tc)	10V	10.5mOhm @ 20A, 10V	Surface Mount	4V @ 14µA	17 nC @ 10 V	40 V	±20V	1300 pF @ 20 V	-	-	PG-TSDSON-8-1	-	2.1W (Ta), 35W (Tc)	-55°C ~ 150°C (TJ)
AUIRFN8403TR MOSFET N-CH 40V 95A 8PQFN Infineon Technologies	6,946	-	询价单	数据表	HEXFET®	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	95A (Tc)	10V	3.3mOhm @ 50A, 10V	Surface Mount	3.9V @ 100µA	98 nC @ 10 V	40 V	±20V	3174 pF @ 25 V	-	-	8-PQFN (5x6)	-	4.3W (Ta), 94W (Tc)	-55°C ~ 175°C (TJ)
IPS60R3K4CEAKMA1 CONSUMER Infineon Technologies	4,359	-	询价单	数据表	CoolMOS™ CE	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	2.6A (Tj)	10V	3.4Ohm @ 500mA, 10V	Through Hole	3.5V @ 40µA	4.6 nC @ 10 V	600 V	±20V	93 pF @ 100 V	-	-	PG-TO251-3	-	-	-40°C ~ 150°C (TJ)
IRF7580MTRPBF MOSFET N-CH 60V 114A DIRECTFET Infineon Technologies	8,923	-	询价单	数据表	StrongIRFET™	DirectFET™ Isometric ME	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	114A (Tc)	6V, 10V	3.6mOhm @ 70A, 10V	Surface Mount	3.7V @ 150µA	180 nC @ 10 V	60 V	±20V	6510 pF @ 25 V	-	-	DirectFET™ Isometric ME	-	115W (Tc)	-55°C ~ 175°C (TJ)
IRFR7540PBF MOSFET N-CH 60V 90A DPAK Infineon Technologies	8,007	-	询价单	数据表	StrongIRFET™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	90A (Tc)	6V, 10V	4.8mOhm @ 66A, 10V	Surface Mount	3.7V @ 100µA	130 nC @ 10 V	60 V	±20V	4360 pF @ 25 V	-	-	TO-252AA (DPAK)	-	140W (Tc)	-55°C ~ 175°C (TJ)
IRFR7546PBF MOSFET N-CH 60V 56A DPAK Infineon Technologies	3,269	-	询价单	数据表	StrongIRFET™	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	56A (Tc)	6V, 10V	7.9mOhm @ 43A, 10V	Surface Mount	3.7V @ 100µA	87 nC @ 10 V	60 V	±20V	3020 pF @ 25 V	-	-	DPAK	-	99W (Tc)	-55°C ~ 175°C (TJ)
SPP16N50C3XKSA1 MOSFET N-CH 560V 16A TO220-3 Infineon Technologies	3,802	-	询价单	数据表	CoolMOS™	TO-220-3 Full Pack	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	16A (Tc)	10V	280mOhm @ 10A, 10V	Through Hole	3.9V @ 675µA	66 nC @ 10 V	560 V	±20V	1600 pF @ 25 V	-	-	PG-TO220-3-111	-	160W (Tc)	-55°C ~ 150°C (TJ)
IRFS7430PBF MOSFET N-CH 40V 195A D2PAK Infineon Technologies	6,045	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	6V, 10V	1.2mOhm @ 100A, 10V	Surface Mount	3.9V @ 250µA	460 nC @ 10 V	40 V	±20V	14240 pF @ 25 V	-	-	D2PAK	-	375W (Tc)	-55°C ~ 175°C (TJ)
IRFS7430-7PPBF MOSFET N-CH 40V 240A D2PAK Infineon Technologies	8,820	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-263-7, D2PAK (6 Leads + Tab)	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	240A (Tc)	6V, 10V	0.75mOhm @ 100A, 10V	Surface Mount	3.9V @ 250µA	460 nC @ 10 V	40 V	±20V	13975 pF @ 25 V	-	-	D2PAK (7-Lead)	-	375W (Tc)	-55°C ~ 175°C (TJ)
IRFS7434PBF MOSFET N-CH 40V 195A D2PAK Infineon Technologies	7,966	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	6V, 10V	1.6mOhm @ 100A, 10V	Surface Mount	3.9V @ 250µA	324 nC @ 10 V	40 V	±20V	10820 pF @ 25 V	-	-	D2PAK	-	294W (Tc)	-55°C ~ 175°C (TJ)

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