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场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度

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图片 厂商料号 库存情况 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 安装类型 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 漏极到源极电压 (Vdss) 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds 认证 FET 特性 供应商设备封装 等级 功耗(最大值) 工作温度
IRFS7540PBF

IRFS7540PBF

MOSFET N CH 60V 110A D2PAK

Infineon Technologies

4,870 -
IRFS7540PBF

数据表

HEXFET®, StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 110A (Tc) 6V, 10V 5.1mOhm @ 65A, 10V Surface Mount 3.7V @ 100µA 130 nC @ 10 V 60 V ±20V 4555 pF @ 25 V - - D2PAK - 160W (Tc) -55°C ~ 175°C (TJ)
BSS159NL6327HTSA1

BSS159NL6327HTSA1

MOSFET N-CH 60V 230MA SOT23-3

Infineon Technologies

8,268 -
BSS159NL6327HTSA1

数据表

SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel, Depletion Mode MOSFET (Metal Oxide) 230mA (Ta) 0V, 10V 3.5Ohm @ 160mA, 10V Surface Mount 2.4V @ 26µA 2.9 nC @ 5 V 60 V ±20V 44 pF @ 25 V - - PG-SOT23 - 360mW (Ta) -55°C ~ 150°C (TJ)
BSS139L6327HTSA1

BSS139L6327HTSA1

MOSFET N-CH 250V 100MA SOT23-3

Infineon Technologies

5,762 -
BSS139L6327HTSA1

数据表

SIPMOS® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel, Depletion Mode MOSFET (Metal Oxide) 100mA (Ta) 0V, 10V 14Ohm @ 0.1mA, 10V Surface Mount 1V @ 56µA 3.5 nC @ 5 V 250 V ±20V 76 pF @ 25 V - - PG-SOT23 - 360mW (Ta) -55°C ~ 150°C (TJ)
AUIRFS4115-7P

AUIRFS4115-7P

MOSFET N-CH 150V 105A D2PAK

Infineon Technologies

9,848 -
AUIRFS4115-7P

数据表

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tube Obsolete N-Channel MOSFET (Metal Oxide) 105A (Tc) 10V 11.8mOhm @ 63A, 10V Surface Mount 5V @ 250µA 110 nC @ 10 V 150 V ±20V 5320 pF @ 50 V - - D2PAK (7-Lead) - 380W (Tc) -55°C ~ 175°C (TJ)
AUIRFS4115-7TRL

AUIRFS4115-7TRL

MOSFET N-CH 150V 105A D2PAK

Infineon Technologies

9,394 -
AUIRFS4115-7TRL

数据表

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 105A (Tc) 10V 11.8mOhm @ 63A, 10V Surface Mount 5V @ 250µA 110 nC @ 10 V 150 V ±20V 5320 pF @ 50 V - - D2PAK (7-Lead) - 380W (Tc) -55°C ~ 175°C (TJ)
IRFB7746PBF

IRFB7746PBF

MOSFET N-CH 75V 59A TO220AB

Infineon Technologies

7,425 -
IRFB7746PBF

数据表

StrongIRFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 59A (Tc) 6V, 10V 10.6mOhm @ 35A, 10V Through Hole 3.7V @ 100µA 83 nC @ 10 V 75 V ±20V 3049 pF @ 25 V - - TO-220AB - 99W (Tc) -55°C ~ 175°C (TJ)
IRFB7787PBF

IRFB7787PBF

MOSFET N-CH 75V 76A TO220AB

Infineon Technologies

6,943 -
IRFB7787PBF

数据表

HEXFET®, StrongIRFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 76A (Tc) 6V, 10V 8.4mOhm @ 46A, 10V Through Hole 3.7V @ 100µA 109 nC @ 10 V 75 V ±20V 4020 pF @ 25 V - - TO-220AB - 125W (Tc) -55°C ~ 175°C (TJ)
IRFSL7430PBF

IRFSL7430PBF

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies

2,442 -
IRFSL7430PBF

数据表

HEXFET®, StrongIRFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete N-Channel MOSFET (Metal Oxide) 195A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V Surface Mount 3.9V @ 250µA 460 nC @ 10 V 40 V ±20V 14240 pF @ 25 V - - D2PAK - 375W (Tc) -55°C ~ 175°C (TJ)
IRF9393TRPBFXTMA1

IRF9393TRPBFXTMA1

TRENCH <= 40V

Infineon Technologies

5,912 -
IRF9393TRPBFXTMA1

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 9.2A (Ta) 4.5V, 20V 13.3mOhm @ 9.2A, 20V Surface Mount 2.4V @ 25µA 38 nC @ 10 V 30 V ±25V 1110 pF @ 25 V - - 8-SOIC - 2.5W (Ta) -55°C ~ 150°C (TJ)
IRFSL7434PBF

IRFSL7434PBF

MOSFET N-CH 40V 195A TO262

Infineon Technologies

5,380 -
IRFSL7434PBF

数据表

HEXFET®, StrongIRFET™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 195A (Tc) 6V, 10V 1.6mOhm @ 100A, 10V Through Hole 3.9V @ 250µA 324 nC @ 10 V 40 V ±20V 10820 pF @ 25 V - - TO-262 - 294W (Tc) -55°C ~ 175°C (TJ)
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