Infineon Technologies|场效应晶体管（FETs）、MOSFETs - 页 597

厂商料号	库存情况	价格	数量	数据表	系列	封装/外壳	包装	产品状态	FET 类型	技术	电流 - 连续漏极 (Id) @ 25°C	驱动电压（最大导通电阻，最小导通电阻）	导通电阻 (Rds On)（最大值）@ Id, Vgs	安装类型	栅极阈值电压 (Vgs(th)）（最大值）@ Id	栅极电荷 (Qg)（最大值）@ Vgs	漏极到源极电压 (Vdss)	栅极电压 (Vgs)（最大值）	输入电容 (Ciss)（最大值）@ Vds	认证	FET 特性	供应商设备封装	等级	功耗（最大值）	工作温度
IRL6283MTRPBF MOSFET N-CH 20V 38A DIRECTFET Infineon Technologies	3,209	-	询价单	数据表	HEXFET®, StrongIRFET™	DirectFET™ Isometric MD	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	38A (Ta), 211A (Tc)	2.5V, 4.5V	0.75mOhm @ 50A, 10V	Surface Mount	1.1V @ 100µA	158 nC @ 4.5 V	20 V	±12V	8292 pF @ 10 V	-	-	DIRECTFET™ MD	-	2.1W (Ta), 63W (Tc)	-40°C ~ 150°C (TJ)
IRFHM8228TRPBF MOSFET N-CH 25V 19A 8PQFN Infineon Technologies	9,060	-	询价单	数据表	HEXFET®	8-PowerTDFN	Tape & Reel (TR)	Obsolete	N-Channel	MOSFET (Metal Oxide)	19A (Ta)	4.5V, 10V	5.2mOhm @ 20A, 10V	Surface Mount	2.35V @ 25µA	18 nC @ 10 V	25 V	±20V	1667 pF @ 10 V	-	-	8-PQFN (3.3x3.3), Power33	-	2.8W (Ta), 34W (Tc)	-55°C ~ 150°C (TJ)
IPP50R399CPXKSA1 MOSFET N-CH 500V 9A TO220-3 Infineon Technologies	9,975	-	询价单	数据表	CoolMOS™	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	9A (Ta)	10V	399mOhm @ 4.9A, 10V	Through Hole	3.5V @ 330µA	4 nC @ 10 V	500 V	±20V	890 pF @ 100 V	-	-	PG-TO220-3	-	83W (Tc)	-55°C ~ 150°C (TJ)
IRF8707TRPBFXTMA1 TRENCH <= 40V Infineon Technologies	7,050	-	询价单	数据表	-	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
BSS126 E6327 MOSFET N-CH 600V 21MA SOT23-3 Infineon Technologies	8,065	-	询价单	数据表	SIPMOS®	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	N-Channel, Depletion Mode	MOSFET (Metal Oxide)	21mA (Ta)	0V, 10V	500Ohm @ 16mA, 10V	Surface Mount	2.7V @ 8µA	2.1 nC @ 5 V	600 V	±20V	28 pF @ 25 V	-	-	PG-SOT23	-	500mW (Ta)	-55°C ~ 150°C (TJ)
IRFS7530-7PPBF MOSFET N CH 60V 240A D2PAK Infineon Technologies	8,120	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-263-7, D2PAK (6 Leads + Tab)	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	240A (Tc)	6V, 10V	1.4mOhm @ 100A, 10V	Surface Mount	3.7V @ 250µA	354 nC @ 10 V	60 V	±20V	12960 pF @ 25 V	-	-	D2PAK (7-Lead)	-	375W (Tc)	-55°C ~ 175°C (TJ)
IRFS7530PBF MOSFET N-CH 60V 195A D2PAK Infineon Technologies	2,496	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	6V, 10V	2mOhm @ 100A, 10V	Surface Mount	3.7V @ 250µA	411 nC @ 10 V	60 V	±20V	13703 pF @ 25 V	-	-	D2PAK	-	375W (Tc)	-55°C ~ 175°C (TJ)
IRFS7534-7PPBF MOSFET N CH 60V 240A D2PAK Infineon Technologies	2,122	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-263-7, D2PAK (6 Leads + Tab)	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	240A (Tc)	6V, 10V	1.95mOhm @ 100A, 10V	Surface Mount	3.7V @ 250µA	300 nC @ 10 V	60 V	±20V	9990 pF @ 25 V	-	-	D2PAK (7-Lead)	-	290W (Tc)	-55°C ~ 175°C (TJ)
IRFS7534PBF MOSFET N CH 60V 195A D2PAK Infineon Technologies	9,123	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	195A (Tc)	6V, 10V	2.4mOhm @ 100A, 10V	Surface Mount	3.7V @ 250µA	279 nC @ 10 V	60 V	±20V	10034 pF @ 25 V	-	-	D2PAK	-	294W (Tc)	-55°C ~ 175°C (TJ)
IRFS7537PBF MOSFET N CH 60V 173A D2PAK Infineon Technologies	5,248	-	询价单	数据表	HEXFET®, StrongIRFET™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	173A (Tc)	6V, 10V	3.3mOhm @ 100A, 10V	Surface Mount	3.7V @ 150µA	210 nC @ 10 V	60 V	±20V	7020 pF @ 25 V	-	-	D2PAK	-	230W (Tc)	-55°C ~ 175°C (TJ)

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