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场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商料号 | 库存情况 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 安装类型 | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 漏极到源极电压 (Vdss) | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | 认证 | FET 特性 | 供应商设备封装 | 等级 | 功耗（最大值） | 工作温度 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFR13N20DTRLPMOSFET N-CH 200V 13A DPAK Infineon Technologies |
5,087 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 235mOhm @ 8A, 10V | Surface Mount | 5.5V @ 250µA | 38 nC @ 10 V | 200 V | ±30V | 830 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 110W (Tc) | -55°C ~ 175°C (TJ) |
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IRFR13N20DTRRPMOSFET N-CH 200V 13A DPAK Infineon Technologies |
4,373 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 13A (Tc) | 10V | 235mOhm @ 8A, 10V | Surface Mount | 5.5V @ 250µA | 38 nC @ 10 V | 200 V | ±30V | 830 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 110W (Tc) | -55°C ~ 175°C (TJ) |
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|
IRFR3504ZTRRPBFMOSFET N-CH 40V 42A DPAK Infineon Technologies |
4,605 | - |
|
数据表 |
HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 10V | 9mOhm @ 42A, 10V | Surface Mount | 4V @ 250µA | 45 nC @ 10 V | 40 V | ±20V | 1510 pF @ 25 V | - | - | TO-252AA (DPAK) | - | 90W (Tc) | -55°C ~ 175°C (TJ) |
|
IRFB7440GPBFMOSFET N CH 40V 120A TO220AB Infineon Technologies |
6,376 | - |
|
数据表 |
HEXFET®, StrongIRFET™ | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 120A (Tc) | 6V, 10V | 2.5mOhm @ 100A, 10V | Through Hole | 3.9V @ 100µA | 135 nC @ 10 V | 40 V | ±20V | 4730 pF @ 25 V | - | - | TO-220AB | - | 208W (Tc) | -55°C ~ 175°C (TJ) |
|
SPB02N60S5ATMA1MOSFET N-CH 600V 1.8A TO263-3 Infineon Technologies |
87 | - |
|
数据表 |
CoolMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | Surface Mount | 5.5V @ 80µA | 9.5 nC @ 10 V | 600 V | ±20V | 240 pF @ 25 V | - | - | PG-TO263-3-2 | - | 25W (Tc) | -55°C ~ 150°C (TJ) |
|
IPP80R750P7XKSA1MOSFET N-CH 800V 7A TO220-3 Infineon Technologies |
6,744 | - |
|
数据表 |
CoolMOS™ P7 | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 7A (Tc) | 10V | 750mOhm @ 2.7A, 10V | Through Hole | 3.5V @ 140µA | 17 nC @ 10 V | 800 V | ±20V | 460 pF @ 500 V | - | - | PG-TO220-3 | - | 51W (Tc) | -55°C ~ 150°C (TJ) |
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IRLU3110ZPBFMOSFET N-CH 100V 42A IPAK Infineon Technologies |
444 | - |
|
数据表 |
HEXFET® | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 42A (Tc) | 4.5V, 10V | 14mOhm @ 38A, 10V | Through Hole | 2.5V @ 100µA | 48 nC @ 4.5 V | 100 V | ±16V | 3980 pF @ 25 V | - | - | IPAK (TO-251AA) | - | 140W (Tc) | -55°C ~ 175°C (TJ) |
|
SPP80N06S209N-CHANNEL POWER MOSFET Infineon Technologies |
894 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 10V | 9.1mOhm @ 50A, 10V | Through Hole | 4V @ 125µA | 80 nC @ 10 V | 55 V | ±20V | 3140 pF @ 25 V | - | - | PG-TO220-3-1 | - | 190W (Tc) | -55°C ~ 175°C (TJ) |
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IPP070N08N3GN-CHANNEL POWER MOSFET Infineon Technologies |
609 | - |
|
数据表 |
OptiMOS™ | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 80A (Tc) | 6V, 10V | 7mOhm @ 73A, 10V | Through Hole | 3.5V @ 73µA | 56 nC @ 10 V | 80 V | ±20V | 3840 pF @ 40 V | - | - | PG-TO220-3 | - | 136W (Tc) | -55°C ~ 175°C (TJ) |
|
IPA180N10N3GXKSA1MOSFET N-CH 100V 28A TO220-FP Infineon Technologies |
8,733 | - |
|
数据表 |
OptiMOS™ | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 28A (Tc) | 6V, 10V | 18mOhm @ 28A, 10V | Through Hole | 3.5V @ 35µA | 25 nC @ 10 V | 100 V | ±20V | 1800 pF @ 50 V | - | - | PG-TO220-FP | - | 30W (Tc) | -55°C ~ 175°C (TJ) |
